MMBT5551 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Emitter Voltage VCEO 160 V Collector Base Voltage VCBO 180 V Emitter Base Voltage VEBO 6 V Collector Current IC 600 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C Characteristics at Tamb=25 OC Parameter DC Current Gain at VCE=5V, IC=1mA at VCE=5V, IC=10mA at VCE=5V, IC=50mA Collector Emitter Breakdown Voltage at IC=1mA Collector Base Breakdown Voltage at IC=100µA Emitter Base Breakdown Voltage at IE=10µA Collector Cutoff Current at VCB=120V Emitter Cutoff Current at VEB=4V Collector Saturation Voltage at IC=10mA, IB=1mA at IC=50mA, IB=5mA Base Saturation Voltage at IC=10mA, IB=1mA at IC=50mA, IB=5mA Gain Bandwidth Product at VCE=10V, IC=10mA, f=100MHz Collector Base Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=5V, IC=200µA, RG=2KΩ, f=30Hz…15KHz Thermal Resistance Junction to Ambient Symbol Min. Max. Unit hFE hFE hFE 80 80 30 250 - - V(BR)CEO 160 - V V(BR)CBO 180 - V V(BR)EBO 6 - V ICBO - 50 nA IEBO - 50 nA VCE sat VCE sat - 0.15 0.2 V V VBE sat VBE sat - 1 1 V V fT 100 300 MHz CCBO - 6 pF NF - 8 dB RthA - 200 K/W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 16/11/2005 MMBT5551 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 16/11/2005