MMBTSC2413 NPN Silicon Epitaxial Planar Transistor High frequency amplifier transistor. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 5 V Collector Current IC 50 mA Power Dissipation Ptot 200 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Collector Base Cutoff Current at VCB = 24 V Emitter Base Cutoff Current at VEB = 3 V Collector Base Breakdown Voltage at IC = 50 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 50 µA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Gain Bandwidth Product at VCE = 6 V, -IE = 1 mA, f = 100 MHz Output Capacitance at VCB = 6 V, f = 1 MHz C C Symbol Min. Typ. Max. Unit hFE 82 - 180 - ICBO - - 0.5 µA IEBO - - 0.5 µA V(BR)CBO 40 - - V V(BR)CEO 25 - - V V(BR)EBO 5 - - V VCE(sat) - - 0.3 V fT 100 300 - MHz Cob - 1.3 2.2 pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/04/2009 MMBTSC2413 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/04/2009