TGS 2SC1815LT1

TIGER ELECTRONIC CO.,LTD
SOT-23
2SC1815LT1
Plastic-Encapsulate Transistors
SOT-23
TRANSISTOR (NPN)
FEATURES
Power dissipation
1. BASE
2. EMITTER
MARKING : C1815=HF
3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
150
mA
PC
Collector Power Dissipation
200
mW
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= 100uA, IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 0.1mA, IB=0
50
V
Collector cut-off current
ICBO
VCB=60V, IE=0
0.1
uA
Collector cut-off current
ICEO
VCE=50V, IB=0
0.1
uA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1
uA
DC current gain
hFE
VCE= 6V, IC= 2mA
130
400
Collector-emitter saturation voltage
VCE(sat)
IC=100mA, IB= 10mA
0.25
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB= 10mA
1
V
fT
Transition frequency
CLASSIFICATION
Rank
Range
OF
VCE=10V, IC= 1mA,
f=30MHz
80
MHz
hFE
L
H
130-200
200-400
Typical Characteristics
VCE(sat)/VBE(sat)-IC
TSC1815LT1
fT-Ic