TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) TO-126 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PD Collector Power Dissipation 1.25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 123 3. BASE ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB= 40 V, IE=0 1 µA Collector cut-off current ICEO VCE= 30 V, IB=0 10 µA Emitter cut-off current IEBO VEB= 6 V, IC=0 1 µA DC current gain hFE VCE= 2 V, IC= 1A 60 Collector-emitter saturation voltage VCE (sat) IC= 2A, IB= 0.2 A 0.5 V Base-emitter saturation voltage VBE (sat) IC= 2A, IB= 0.2 A 1.5 V Transition frequency fT VCE= 5V, IC=0.1A 400 90 f =10MHz MHz CLASSIFICATION OF hFE Rank R O Y GR Range 60-120 100-200 160-320 200-400