TGS TBA820M

TIGER ELECTRONIC CO.,LTD
TBA820M
1.2W AUDIO POWER AMPLIFIER
TBA820M
GENERAL DESCRIPTION
The TBA820M is a monolithic integrated circuit in 8
lead dual in -line plastic packag e. It is intended for
use a slow frequency class B power amplifier in
portable cassette players and radios.
FEATURES
Wide range of supp ly voltage : Vcc=3V~16V in
portable radios, cassette recorders and players etc.
Main features are : minimum working supply voltage of 3V
Outline Drawing
Low quiescent supply current ( Icc=4mA , typical)
Good ripple rejection
Low number of external components
No crossover distortion
Low power dissipation
Output Power : Po=2W at 12V/8Ω , 1.6W at 9V/4Ω and 1.2W at 9V/8Ω
BLOCK DIAGRAM
PIN CONNECTION
Ripple Bootstrap Vcc
OUTPUT
7
5
8
6
-
Frequency
Compensation
1
8
Ripple
Rejection
Gain Setting
2
7
Bootstrap
Input
3
6
Supply
Voltage
Ground
4
5
Output
TBA820M
+
1
2
3
4
CB
NF
INPUT
GND
TBA820M
ABSOLUTE MAXIMUM RATINGS
Characteristics
Symbol
Value
Unit
Supply Voltage
Vcc
16
V
Peak Output Current
Ipk
1.5
A
Power Dissipation(at Tamb =50 °C)
PD
1.25
W
Operating Temperature
Topr
-20~70
°C
Storage Temperature
Tstg
-40~150
°C
THERMAL DATA
Characteristics
Symbol
Value
Unit
Thermal resistance junction-ambient
Rth(j-a)
100
°C/W
ELECTRICAL CHARACTERISTICS
( Unless otherwise specified Vcc=9V,Tamb=25°C)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Supply Voltage
Quiescent Output
Voltage(pin 5)
Quiescent Drain
Current
Bias current (pin 3)
Vcc
3
Vo
4
16
V
4.5
5
V
Id
4
12
mA
Ib
0.1
Vcc=12V;R L =8 Ω
Output Power
Po
Vcc=9V;R L =4 Ω
THD=10% Vcc=9V;R L =8 Ω
f=1kHz
Vcc=6V;R L =4 Ω
Rf=120Ω
Vcc=3.5V;R L =4 Ω
Vcc=3V;R L =4 Ω
Po=1.2W
f=1kHz
Input sensitivity
Vi(rms)
R L =8 Ω
Po=50mW R L =8 Ω
f=1kHz
Input resistance(pin 3)
Ri
f=1kHz
Frequency response
(-3dB)
B
R L =8 Ω Rf=120Ω
C5=1000µF
µA
2
1.6
0.9
1.2
0.75
W
0.25
0.2
Rf=33Ω
16
Rf=120Ω
60
Rf=33Ω
3.5
Rf=120Ω
12
5
C B =680pF
25 to 7000
C B =220pF
25 to 20000
mV
mV
MΩ
Hz
TBA820M
ELECTRICAL CHARACTERISTIVCS
( Unless otherwise specified
Vcc=9V,Tamb=25°C)
Characteristic
Symbol
Distortion
THD
Continue
Test Condition
Po=500 mW R L =8Ω
f=1kHz
Vo ltage Gain
(open loop)
Gv
R L =8Ω
f=1kHz
Vo ltage Gain
(closed loop)
Gv
R L =8Ω
f=1kHz
Input noise Voltage
Min. Typ. Max. Unit
Rf=33Ω
0.8
Rf=120Ω
0.4
%
75
dB
Rf=33Ω
45
Rf=120Ω
34
VN
Vcc=9V,B(-3dB)=25~20000Hz
3
µA
Input noise current
IN
Vcc=9V,B(-3dB)=25~20000Hz
0.4
nA
R1=10kΩ
80
Signal to noise ratio (*)
S+N/N
Supply voltage rejection
(test circuit of 2)
Po=1.2W
Gv=34dB
R L =8Ω
dB
dB
R1=50kΩ
R L =8Ω f(ripple)=100Hz
C6=47 µF Rf=120 Ω
SVR
(*) B(-3dB)=25~20000Hz
TEST CIRCUIT
C6
6
C4
8
3
Vi
7
0.1uF
C2
100uF/15V
47uF/10V
1. Circuit diagram with load connected to the supply voltage
1
Vcc
RL
CB
C5
TBA820M
2
5
R1
10K
Rf
C1
100uF/6V
4
R2
1
220uF/15V
C3
0.22uF
70
42
dB
TBA820M
2. Circuit diagram with load connected to ground
100uF/15V
C4
6
3
Vi
7
CB
1
Rf
C1
100uF/6V
4
C6
C5
220uF/15V
R2
1
47uF/10V
85
C3
0.22uF
2
C7
100uF/15V
TBA820M
R1
10K
Vcc
0.1uF
R3
56
C2
CHARACTERISTICS CURVES
RL
TBA820M