UOT MID

T-1 3/4 PACKAGE
PIN PHOTODIODE
MID-86416
Description
Package Dimensions
The MID-86416 is a photodiode mounted in water clear
Unit: mm ( inches )
end look plastic package and suitable for the variety
wavelength.
5.00
(.200)
5.45
(.215)
4.30
(.170)
5.80
(.228)
1.00
(.040)
SEE NOTE 2
FLAT DENOTES CATHODE
23.50 MIN.
(.920)
Features
l
High photo sensitivity
l
Low junction capacitance
l
High cut-off frequency
l
Fast switching time
l
Acceptance viwe angle : 130°
l
Chip size : 64mil × 64mil
0.50 TYP.
(.020)
1.00 MIN.
(.040)
2.54 NOM.
(.100)
SEE NOTE 3
A
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.0 mm (.040") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ TA=25oC
Parameter
Power Dissipation
Maximum Rating
Unit
150
mW
o
o
o
o
Operating Temperature Range
-55 C to + 100 C
Storage Temperature Range
-55 C to + 100 C
Lead Soldering Temperature
260oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002
MID-86416
Optical-Electrical Characteristics
@ TA=25oC
Parameter
Test Conditions
Symbol
Min.
V(BR)R
30
IR=100µA
Reverse Break Down Voltage
Ee=0
VR=10V
Reverse Dark Current
Max.
λ=850nm
Unit
V
ID
Ee=0
Open Circuit Voltage
Type .
30
VOC
nA
mV
350
2
Ee=0.1mW/cm
Rise Time
VR =10V,λ=850nm
Tr
30
Fall Time
RL=1KΩ
Tf
40
Light Current
VR =5V , λ=850nm
IL
3
µA
CT
17
pF
Ee=0.1mW/cm2
VR =3V , f=1MHZ
Total Capacitance
Ee=0
nsec
Typical Optical-Electrical Characteristic Curves
100
Capacitance C - pF
Dark Current - pA
4000
3000
2000
1000
60
40
20
0
0
0
5
10
15
20
Reverse Volatage - VR
FIG.1 DARK CURRENT VS REVERSE VOLTAGE
o
2
TA=25 C, Ee=0 mW/cm
0.01
0.1
1
10
100
Reverse Voltage- VR
FIG.2 CAPACITANCE VS. REVERSE VOLTAGE
2
F=1MHZ, Ee=0mW/cm
1000
Dark Current IR - nA
200
Total Power Dissipation mW
80
150
100
50
0
100
10
1
0.1
0
20
40
60
80
o
100
Ambient Temperature - C
FIG.3 TOTAL POWER DISSIPATION
VS. AMBIENT TEMPERATURE
0
20
40
60
80
100
Ambient Temperature -oC
FIG.4 DARK CURRENT VS AMBIENT
TEMPERATURE
2
VR=10, Ee=0 mw/cm
Unity Opto Technology Co., Ltd.
02/04/2002
MID-86416
Typical Optical-Electrical Characteristic Curves
1000
Ip - µA
Relative Spectral Sensitivity
100
80
Photocurrnet
60
40
20
0
400
600
800
1000
1200
Wavelength-nm
FIG.5 RELATIVE SPECTRAL SENSITIVITY
VS. WAVELENGTH
100
100
10
1
0.1
0.01
0.1
1
10
Irradiance Ee (mW/cm2)
FIG.6 PHOTOCURRENT VS.
IRRADIANCE = 850 nm
Relative Sensitivity
0° 10° 20°
30°
40°
1.0
0.9
50
0.8
60
70
°
80°
90
0.5 0.3 0.1 0.2 0.4 0.6
FIG .7 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002