T-1 3/4 PACKAGE PIN PHOTODIODE MID-86416 Description Package Dimensions The MID-86416 is a photodiode mounted in water clear Unit: mm ( inches ) end look plastic package and suitable for the variety wavelength. 5.00 (.200) 5.45 (.215) 4.30 (.170) 5.80 (.228) 1.00 (.040) SEE NOTE 2 FLAT DENOTES CATHODE 23.50 MIN. (.920) Features l High photo sensitivity l Low junction capacitance l High cut-off frequency l Fast switching time l Acceptance viwe angle : 130° l Chip size : 64mil × 64mil 0.50 TYP. (.020) 1.00 MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3 A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.0 mm (.040") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Power Dissipation Maximum Rating Unit 150 mW o o o o Operating Temperature Range -55 C to + 100 C Storage Temperature Range -55 C to + 100 C Lead Soldering Temperature 260oC for 5 seconds Unity Opto Technology Co., Ltd. 02/04/2002 MID-86416 Optical-Electrical Characteristics @ TA=25oC Parameter Test Conditions Symbol Min. V(BR)R 30 IR=100µA Reverse Break Down Voltage Ee=0 VR=10V Reverse Dark Current Max. λ=850nm Unit V ID Ee=0 Open Circuit Voltage Type . 30 VOC nA mV 350 2 Ee=0.1mW/cm Rise Time VR =10V,λ=850nm Tr 30 Fall Time RL=1KΩ Tf 40 Light Current VR =5V , λ=850nm IL 3 µA CT 17 pF Ee=0.1mW/cm2 VR =3V , f=1MHZ Total Capacitance Ee=0 nsec Typical Optical-Electrical Characteristic Curves 100 Capacitance C - pF Dark Current - pA 4000 3000 2000 1000 60 40 20 0 0 0 5 10 15 20 Reverse Volatage - VR FIG.1 DARK CURRENT VS REVERSE VOLTAGE o 2 TA=25 C, Ee=0 mW/cm 0.01 0.1 1 10 100 Reverse Voltage- VR FIG.2 CAPACITANCE VS. REVERSE VOLTAGE 2 F=1MHZ, Ee=0mW/cm 1000 Dark Current IR - nA 200 Total Power Dissipation mW 80 150 100 50 0 100 10 1 0.1 0 20 40 60 80 o 100 Ambient Temperature - C FIG.3 TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE 0 20 40 60 80 100 Ambient Temperature -oC FIG.4 DARK CURRENT VS AMBIENT TEMPERATURE 2 VR=10, Ee=0 mw/cm Unity Opto Technology Co., Ltd. 02/04/2002 MID-86416 Typical Optical-Electrical Characteristic Curves 1000 Ip - µA Relative Spectral Sensitivity 100 80 Photocurrnet 60 40 20 0 400 600 800 1000 1200 Wavelength-nm FIG.5 RELATIVE SPECTRAL SENSITIVITY VS. WAVELENGTH 100 100 10 1 0.1 0.01 0.1 1 10 Irradiance Ee (mW/cm2) FIG.6 PHOTOCURRENT VS. IRRADIANCE = 850 nm Relative Sensitivity 0° 10° 20° 30° 40° 1.0 0.9 50 0.8 60 70 ° 80° 90 0.5 0.3 0.1 0.2 0.4 0.6 FIG .7 SENSITIVITY DIAGRAM Unity Opto Technology Co., Ltd. 02/04/2002