T-1 3/4 PACKAGE NPN PHOTOTRANSISTOR Description MID-54422 Package Dimensions The MID-54422 is a NPN silicon phototransistor mounted ψ5.05 (.200) Unit: mm ( inches ) in a lensed, water clear plastic package. The lensing effect of the package allows an acceptance view angle of 40o so 5.47 (.215) that the product performs a high directional characteristic. 7.62 (.300) 5.90 (.230) 1.00 (.040) FLAT DENOTES COLLECTOR 23.40 MIN. (.920) Features .50 TYP. (.020) l Wide range of collector current l Lensed for high sensitivity l Low cost plastic package l Standard T-1 3/4 (5mm) package. l Acceptance angle :40o 1.00MIN. (.040) 2.54 (.100) E C Notes : 1.Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2.Protruded resin under flange is 1.0 mm (.040") max. 3.Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Maximum Rating Unit Power Dissipation 150 mW Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V o o Operating Temperature Range -55 C to +100 C Storage Temperature Range -55oC to +100oC Lead Soldering Temperature 260oC for 5 seconds Unity Opto Technology Co., Ltd. 02/04/2002 MID-54422 Optical-Electrical Characteristics @ TA=25oC Parameter Test Conditions Symbol Min. V(BR)CEO 30 V(BR)ECO 5 Typ . Collector-Emitter Ic=0.1mA Breakdown Voltage Ee=0 Emitter-Collector Ie=0.1mA Breakdown Voltage Ee=0 Collector-Emitter Ic=0.5mA Saturation Voltage Ee=0.1mW/cm2 Rise Time Vcc =5V , RL=1KΩ Tr 15 Fall Time IC=1mA Tf 15 Collector Dark VCE=10V ICEO Current Ee=0 On State Collector VCE=5V Current Ee=0.1mW/cm2 1 0.1 0.01 0.001 120 TA - Ambient Temperature -oC FIG.1 COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE 200 120 80 40 0 0 2 4 6 8 10 Relative Sensitivity RL - Load Resistance - KΩ FIG.3 RISE AND FALL TIME VS LOAD RESISTANCE nA mA Vce = 5 V Ee = 0.1 mW/cm2 @λ= 940 nm -75 -25 25 75 125 TA - Ambient Temperature -oC FIG.2 NORMALIZED COLLECTOR CURRENT VS AMBIENT TEMPERATURE Vcc = 5 V VRL= 1 V F = 100 Hz PW = 1 ms 160 1 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 V µS 100 IC Normalized Collector Current 10 80 0.4 Relative Collector Current (mA) Iceo-Collector Dark Current -µA Tr Tf Rise and Fall Time - µS 100 40 V IC(ON) 1000 Unit V VCE(SAT) Typical Optical-Electrical Characteristic Curves 0 Max. 0° 10° 20° 5 Vce = 5V 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Ee - Irradiance - mW/cm2 FIG.4 RELATIVE COLLECTOR CURRENT VS IRRADIANCE 30° 40° 50° 60° 70° 80° 90° 1.0 0.9 0.8 0.5 0.3 0.1 0.2 0.4 0.6 FIG .5 SENSITIVITY DIAGRAM Unity Opto Technology Co., Ltd. 02/04/2002