UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 TO-251 1 TO-220 FEATURES * RDS(ON) = 2.2Ω @VGS = 10 V * Ultra Low Gate Charge ( Typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 6.5 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness TO-252 1 1 SYMBOL TO-220F TO-220F1 2.Drain 1.Gate 3.Source Note: ORDERING INFORMATION Ordering Number Lead Free Halogen Free 5N60L-TA3-T 5N60G-TA3-T 5N60L-TF3-T 5N60G-TF3-T 5N60L-TF1-T 5N60G-TF1-T 5N60L-TM3-T 5N60G-TM3-T 5N60L-TN3-T 5N60G-TN3-T 5N60L-TN3-R 5N60G-TN3-R Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-251 TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel 1 of 6 QW-R502-065,H 5N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 5 A Continuous Drain Current ID 5 A Pulsed Drain Current (Note 2) IDM 20 A Single Pulsed (Note 3) EAS 210 Avalanche Energy mJ Repetitive (Note 2) EAR 10 Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 100 Power Dissipation TO-220F/TO-220F1 PD 36 W TO-251 / TO-252 54 °C Junction Temperature TJ +150 °C Operation Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L = 16.8mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA Junction to Ambient Junction to Case PARAMETER TO-220 TO-220F/TO-220F1 TO-251 / TO-252 TO-220 TO-220F/TO-220F1 TO-251 / TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 62.5 160 1.25 3.47 2.3 UNIT °C/W °C/W 2 of 6 QW-R502-065,H 5N60 Power MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS VGS =0V, ID = 250μA 600 V VDS =600V, VGS = 0V 1 μA 100 Forward VGS =30V, VDS = 0V nA Gate-Source Leakage Current IGSS Reverse VGS =-30V, VDS = 0V -100 Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250μA, Referenced to 25℃ 0.6 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS =10V, ID = 2.5A 1.8 2.2 Ω DYNAMIC CHARACTERISTICS 515 670 pF Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS 55 72 pF f = 1.0MHz Reverse Transfer Capacitance CRSS 6.5 8.5 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 10 30 ns Turn-On Rise Time tR 42 90 ns VDD = 300V, ID =5A, RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 38 85 ns Turn-Off Fall Time tF 46 100 ns Total Gate Charge QG 15 19 nC VDS = 480 V, ID = 5A, Gate-Source Charge QGS 2.5 nC VGS = 10 V (Note 1, 2) Gate-Drain Charge QGD 6.6 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 5A 1.4 V Maximum Continuous Drain-Source Diode IS 5 A Forward Current Maximum Pulsed Drain-Source Diode ISM 20 A Forward Current Reverse Recovery Time trr VGS = 0 V, IS = 5A, 300 ns dIF / dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR 2.2 μC Note 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-065,H 5N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) P.W. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= VDD P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-065,H 5N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-065,H 5N60 Drain Current, ID (A) Drain Current, ID (A) TYPICAL CHARACTERISTICS On-Resistance Variation vs. Drain Current and Gate Voltage 6 Maximum Safe Operating Area Operation in This Area is Limited by RDS(on) 5 10 VGS=10V 4 VGS=20V 3 2 1 0 100sµ 1 Drain Current, ID (A) Drain-Source On-Resistance, RDS(ON) (Ω) Power MOSFET 0 10 10-1 *Note: TJ=25℃ 0 2 4 6 Drain Current, ID (A) 8 10 1ms 10 10-2 0 10 0m 10ms s DC *Notes: 1. TC=25℃ 2. TJ=150℃ 3. Single Pulse 101 102 Drain-Source Voltage, VDS (V) 103 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-065,H