WEITRON WSD520S_07

WSD520S/521S
Surface Mount Schottky Barrier Diodes
SMALL SIGNAL
SCHOTTKY DIODES
200m AMPERES
30 VOLTS
P b Lead(Pb)-Free
Feature:
*Extrmely High Switching Speed.
*Low Forward Voltage and Low Reverse Current.
*High Reliability.
*Schottky Barrier Diodes Encapsulated in a SOD-523 Package
1
2
Description:
These schottky barrier diodes are designed for high speed
switching applications circuit protection, and voltage clamping,
Extremely low forward voltage reduces conduction loss,
Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
SOD-523
SOD-523 Outline Dimensions
Unit:mm
A
C
HE
V M A
D
0
A
0.5
1mm
scale
E b
p
DIMENSIONS (mm are the original dimensions)
UNIT
mm
max
min
A
bp
c
D
E
HE
V
0.7
0.5
0.35
0.25
0.2
0.1
1.3
1.1
0.9
0.7
1.7
1.5
0.15
Note1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD-523
WEITRON
http://www.weitron.com.tw
REFERENCES
IEC
JEDEC
EIAJ
SC-79
1/4
EUROPEAN
PROJECTION
ISSUE DATE
98-11-25
Rev.C 15-Jan-07
WSD520S/521S
Maximum Ratings (TA=25°C Unless otherwise noted)
Characteristic
Symbol
Value
Unit
VR
30
V
Average Rectifier Forward Current
IF(AV)
200
mA
Peak Forward Surge Current (1)
IFSM
1.0
A
TJ
125
°C
Tstg
-40 to +125
°C
Reverse Voltage
Operating Junction Temperature Range
Storage Temperature Range
Electrical Characteristics (TA=25°C Unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)R
30
-
V
WSD520S
WSD521S
VF
-
0.60
0.50
V
WSD520S
WSD521S
IR
-
1.0
30
µA
Reverse Breakdown Voltage
IR = 100µA
Forward Voltage
IF = 200mA
Reverse Leakage
VR = 10V
NOTE: 1. 60HZ for 1
Device Marking
Item
Marking
WSD520S
B
WSD521S
C
WEITRON
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Eqivalent Circuitdiagram
1
2/4
2
Rev.D 01-Oct-08
WSD520S/521S
Electrical characteristic curves(Ta=25ºC)
WSD520S
1
REVERSE CURRENT : I (A)
R
-25 o
C
o
5C
75 o
C
25 o
C
Ta
=1
2
FORWARD CURRENT:IF(A)
10m
10
75oC
1
25oC
100n
100
10
1
Ta=125oC
100
100m
1m
WSD520S
1m
0
0.1
0.2
0.3
0.4
0.5
0.6
-25oC
10n
1n
0.7
0
10
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
WSD520S
WSD520S
f=1MHz
100
Io CURRENT (%)
CAPACITANCE BETWEEN TERMINALS : CT(pF)
30
REVERSE VOLTAGE: VR(V)
FORWARD VOLTAGE : VF(V)
100
20
10
80
60
40
20
1
0
10
20
0
0
30
WEITRON
50
75
100
125
AMBIENT TEMPERATURE : Ta ( C)
Fig. 3 Capacitance between terminals characteristics
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25
o
REVERSE VOLTAGE : VR(V)
3/4
Fig 4. Derating curve
(mounting on glass epoxy PCBs)
Rev.C 15-Jan-07
WSD520S/521S
Electrical characteristic curves(Ta=25ºC)
WSD521S
1
WSD521S
10m
Ta=125oC
REVERSE CURRENT : I R (A)
10m
-25 o
C
1m
100
75oC
25oC
10
1
-25 oC
100n
10
1
1m
100
Ta
=1
25 o
C
75 o
C
25 o
C
FORWARD CURRENT : I F (A)
100m
0
0.1
0.2
0.3
0.4
0.5
10n
0.6
0
FORWARD VOLTAGE:VF(V)
WSD521S
100
20
Fig. 2 Reverse characteristics
Fig. 1 Forward characteristics
WSD521S
oC
Ta=25
f=1MHz
50
100
Io CURRENT (%)
CAPACITANCE BETWEEN TERMINALS : CT(pF)
10
REVERSE VOLTAGE:VR(V)
20
10
5
80
60
40
20
2
1
0
2
4
6
8
10
12
0
0
14
REVERSE VOLTAGE : VR(V)
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50
75
100
125
AMBIENT TEMPERATURE : Ta(oC)
Fig. 3 Capacitance between
terminals characteristics
WEITRON
25
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
4/4
Rev.C 15-Jan-07