WILLAS 1N5267B

WILLAS
1N5221B THRU 1N5267B
Silicon Z–Diodes
Unit: inch (mm)
DO-35
.022(0.55)
.018(0.45)
Features
D
D
D
D
1.02(26.0)
MIN.
Plannar Die constuction
500mW Power Dissipation
Ideally Suited for Automated Assembly Processes
VZ–tolerance ± 5%
.153(3.6)
.132(3.0)
Applications
.087(2.2)
.067(1.7)
Voltage stabilization
1.02(26.0)
MIN.
MECHANICAL DATA
Approx. Weight: 0.136 grams
Absolute Maximum Ratings
Tj = 25_C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
Tamb=25°C
Type
Symbol
PTOT
IZ
Tj
Tstg
Value
500
PV/VZ
175
–65...+175
Unit
mW
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
l=9.5mm (3/8”), TL=constant
Symbol
RthJA
Value
300
Unit
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
2010.06
Test Conditions
IF=200mA
Type
Symbol
VF
Min
Typ
Max
1.1
Unit
V
WILLS ELECTRONIC CORP.
WILLAS
1N5221B THRU 1N5267B
500 mWatts Zener Diodes
Nominal Zener Voltage
Part No.
Max. Zener Impedance
VZ @ IZT
ZZT @ IZT
Max Reverse
Leakage Current
TK
IR @ V R
VZ
ZZK @ IZK
Marking
Code
Nom. V
Min. V
Max. V
Ω
mA
Ω
mA
μA
V
%/K
1N5221B
2.4
2.28
2.52
30
20.0
1200
0.25
100
1.0
< -0.085
1N5221B
1N5222B
2.5
2.38
2.63
30
20.0
1250
0.25
100
1.0
< -0.085
1N5222B
1N5223B
2.7
2.57
2.84
30
20.0
1300
0.25
75
1.0
< -0.080
1N5223B
1N5224B
2.8
2.66
2.94
30
20.0
1400
0.25
75
1.0
< -0.080
1N5224B
1N5225B
3.0
2.85
3.15
29
20.0
1600
0.25
50
1.0
< -0.075
1N5225B
1N5226B
3.3
3.14
3.47
28
20.0
1600
0.25
25
1.0
< -0.070
1N5226B
1N5227B
3.6
3.42
3.78
24
20.0
1700
0.25
15
1.0
< -0.065
1N5227B
1N5228B
3.9
3.71
4.10
23
20.0
1900
0.25
10
1.0
< -0.060
1N5228B
1N5229B
4.3
4.09
4.52
22
20.0
2000
0.25
5.0
1.0
<+0.050
1N5229B
1N5230B
4.7
4.47
4.94
19
20.0
1900
0.25
5.0
2.0
<+0.030
1N5230B
1N5231B
5.1
4.85
5.36
17
20.0
1600
0.25
5.0
2.0
<+0.030
1N5231B
1N5232B
5.6
5.32
5.88
11
20.0
1600
0.25
5.0
3.0
<+0.038
1N5232B
1N5233B
6.0
5.70
6.30
7
20.0
1600
0.25
5.0
3.5
<+0.038
1N5233B
1N5234B
6.2
5.89
6.51
7
20.0
1000
0.25
5.0
4.0
<+0.045
1N5234B
1N5235B
6.8
6.46
7.14
5
20.0
750
0.25
3.0
5.0
<+0.050
1N5235B
1N5236B
7.5
7.13
7.88
6
20.0
500
0.25
3.0
6.0
<+0.058
1N5236B
1N5237B
8.2
7.79
8.61
8
20.0
500
0.25
3.0
6.5
<+0.062
1N5237B
1N5238B
8.7
8.27
9.14
8
20.0
600
0.25
3.0
6.5
<+0.065
1N5238B
1N5239B
9.1
8.65
9.56
10
20.0
600
0.25
3.0
7.0
<+0.068
1N5239B
1N5240B
10.0
9.50
10.50
17
20.0
600
0.25
3.0
8.0
<+0.075
1N5240B
1N5241B
11.0
10.45
11.55
22
20.0
600
0.25
2.0
8.4
<+0.076
1N5241B
1N5242B
12.0
11.40
12.60
30
20.0
600
0.25
1.0
9.1
<+0.077
1N5242B
1N5243B
13.0
12.35
13.65
13
9.5
600
0.25
0.5
9.9
<+0.079
1N5243B
1N5244B
14.0
13.30
14.70
15
9.0
600
0.25
0.1
10.0
<+0.082
1N5244B
1N5245B
15.0
14.25
15.75
16
8.5
600
0.25
0.1
11.0
<+0.082
1N5245B
1N5246B
16.0
15.20
16.80
17
7.8
600
0.25
0.1
12.0
<+0.083
1N5246B
1N5247B
17.0
16.15
17.85
19
7.4
600
0.25
0.1
13.0
<+0.084
1N5247B
1N5248B
18.0
17.10
18.90
21
7.0
600
0.25
0.1
14.0
<+0.085
1N5248B
1N5249B
19.0
18.05
19.95
23
6.6
600
0.25
0.1
14.0
<+0.086
1N5249B
1N5250B
20.0
19.00
21.00
25
6.2
600
0.25
0.1
15.0
<+0.086
1N5250B
1N5251B
22.0
20.90
23.10
29
5.6
600
0.25
0.1
17.0
<+0.087
1N5251B
1N5252B
24.0
22.80
25.20
33
5.2
600
0.25
0.1
18.0
<+0.088
1N5252B
1N5253B
25.0
23.75
26.25
35
5.0
600
0.25
0.1
19.0
<+0.089
1N5253B
1N5254B
27.0
25.65
28.35
41
4.6
600
0.25
0.1
21.0
<+0.090
1N5254B
1N5255B
28.0
26.60
29.40
44
4.5
600
0.25
0.1
21.0
<+0.091
1N5255B
1N5256B
30.0
28.50
31.50
49
4.2
600
0.25
0.1
23.0
<+0.091
1N5256B
1N5257B
33.0
31.35
34.65
58
3.8
700
0.25
0.1
25.0
<+0.092
1N5257B
1N5258B
36.0
34.20
37.80
70
3.4
700
0.25
0.1
27.0
<+0.093
1N5258B
1N5259B
39.0
37.05
40.95
80
3.2
800
0.25
0.1
30.0
<+0.094
1N5259B
1N5260B
43.0
40.85
45.15
93
3.0
900
0.25
0.1
33.0
<+0.095
1N5260B
2010.08
WILLS ELECTRONIC CORP.
WILLAS
1N5221B THRU 1N5267B
500 mWatts Zener Diodes
Nominal Zener Voltage
Part No.
Max. Zener Impedance
VZ @ IZT
ZZT @ IZT
Max Reverse
Leakage Current
TK
IR @ V R
VZ
ZZK @ IZK
Marking
Code
Nom. V
Min. V
Max. V
Ω
mA
Ω
mA
μA
V
%/K
1N5261B
47.0
44.65
49.35
150
2.7
1000
0.25
0.1
36.0
<+0.095
1N5261B
1N5262B
51.0
48.45
53.55
125
2.5
1100
0.25
0.1
39.0
<+0.096
1N5262B
1N5263B
56.0
53.20
58.80
150
2.2
1300
0.25
0.1
43.0
<+0.096
1N5263B
1N5264B
60.0
57.00
63.00
170
2.1
1400
0.25
0.1
46.0
<+0.097
1N5264B
1N5265B
62.0
58.90
65.10
185
2.0
1400
0.25
0.1
47.0
<+0.097
1N5265B
1N5266B
68.0
64.60
71.40
230
1.8
1600
0.25
0.1
52.0
<+0.097
1N5266B
1N5267B
75.0
71.25
78.75
270
1.7
1700
0.25
0.1
56.0
<+0.098
1N5267B
1) Based on dc–measurement at thermal equilibrium; lead length = 9.5mm (3/8”); thermal resistance of heat sink = 30K/W
POWER DISSIPATION, mWatts
RATING AND CHARACTERISTIC CURVES
500
400
300
200
100
0
50
100
150
200
250
O
AMBIENT TEMPERATURE, C
FIG. 1 POWER DERATING CURVE
Iz (mA)
Vz (V)
5
50
10
15
20
25
40
30
Test Current
Iz = 20mA
30
20
10
24
20
15
12
11
9.1
3.9
6.8
6.2
5.6
5.1
4.7
4.3
2.7
0
Fig.2 BREAKDOWN CHARACTERISTICS
2010.08
WILLS ELECTRONIC CORP.