GXELECTRONICS 1N5235B

1N5221B...1N5267B
星合电子
Vishay Telefunken
ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ
Silicon Z–Diodes
Features
D
D
D
D
Very sharp reverse characteristic
Very high stability
Low reverse current level
VZ–tolerance ± 5%
Applications
94 9367
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
TL 75°C
Type
x
Symbol
PV
IZ
Tj
Tstg
Value
500
PV/VZ
200
–65...+200
Unit
mW
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
l=9.5mm (3/8”), TL=constant
Symbol
RthJA
Value
300
Unit
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Test Conditions
IF=200mA
Type
Symbol
VF
Min
Typ
Max
1.1
Unit
V
Dimensions in mm
Cathode Identification
∅ 0.55 max.
technical drawings
according to DIN
specifications
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3 g
∅ 1.7 max.
26 min.
3.9 max.
26 min.
1
ＧＡＯＭＩ　ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ．　ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ　ＴＥＬ：０５３６－２２１０３５９
1N5221B...1N5267B
星合电子
Vishay Telefunken
ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ
Type
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
1N5266B
1N5267B
VZnom 1)
V
2.4
2.5
2.7
2.8
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
IZT
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
3.2
3.0
2.7
2.5
2.2
2.1
2.0
1.8
1.7
for
Silicon Z–Diodes
rzjT
W
< 30
< 30
< 30
< 30
< 29
< 28
< 24
< 23
< 22
< 19
< 17
< 11
<7
<7
<5
<6
<8
<8
< 10
< 17
< 22
< 30
< 13
< 15
< 16
< 17
< 19
< 21
< 23
< 25
< 29
< 33
< 35
< 41
< 44
< 49
< 58
< 70
< 80
< 93
< 105
< 125
< 150
< 170
< 185
< 230
< 270
rzjk
W
< 1200
< 1250
< 1300
< 1400
< 1600
< 1600
< 1700
< 1900
< 2000
< 1900
< 1600
< 1600
< 1600
< 1000
< 750
< 500
< 500
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 700
< 700
< 800
< 900
< 1000
< 1100
< 1300
< 1400
< 1400
< 1600
< 1700
at
IZK
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
IR
at
mA
< 100
< 100
< 75
< 75
< 50
< 25
< 15
< 10
<5
<5
<5
<5
<5
<5
<3
<3
<3
<3
<3
<3
<2
<1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
VR
V
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
8.4
9.1
9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
39
43
46
47
52
56
TKVZ
%/K
< –0.085
< –0.085
< –0.080
< –0.080
< –0.075
< –0.070
< –0.065
< –0.060
< +0.055
< +0.030
< +0.030
< +0.038
< +0.038
< +0.045
< +0.050
< +0.058
< +0.062
< +0.065
< +0.068
< +0.075
< +0.076
< +0.077
< +0.079
< +0.082
< +0.082
< +0.083
< +0.084
< +0.085
< +0.086
< +0.086
< +0.087
< +0.088
< +0.089
< +0.090
< +0.091
< +0.091
< +0.092
< +0.093
< +0.094
< +0.095
< +0.095
< +0.096
< +0.096
< +0.097
< +0.097
< +0.097
< +0.098
1) Based on dc–measurement at thermal equilibrium; lead length = 9.5mm (3/8”); thermal resistance of heat sink = 30K/W
2
ＧＡＯＭＩ　ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ．　ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ　ＴＥＬ：０５３６－２２１０３５９