7N6
0
SFF
FF7N6
7N60
annel MOS
FET
Silicon N-Ch
Cha
OSF
Features
■ 7A,600V,RDS(on)(Max 1.0Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 29nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Isolation Voltage(VISO=4000V AC)
■ Maximum Junction Temperature Range(150℃)
General Description
This Power
MOSFET is
produced using Winsemi's
advanced
planar stripe,VDMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have
rugged
suited
avalanche characteristics.
for half
electronic
lamp
bridge and full
ballast,high
a high
This devices is specially well
bridge resonant topology
efficiency switched
line a
mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
600
V
Continuous Drain Current(@Tc=25℃)
7*
A
Continuous Drain Current(@Tc=100℃)
4.1*
A
26
A
±30
V
Drain Source Voltage
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
240
mJ
EAR
Repetitive Avalanche Energy
(Note1)
15
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ ns
48
W
0.38
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
*Drain current limited by junction temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
2.6
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
SFF
7N6
0
FF7N6
7N60
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=600V,VGS=0V
-
-
10
µA
VDS=480V,Tc=125℃
-
100
µA
Drain cut -off current
Drain -source breakdown voltage
Test Condition
IDSS
V(BR)DSS
ID=250 µA,VGS=0V
600
-
-
V
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=3.5A
-
0.8
1.0
Ω
Forward Transconductance
gfs
VDS=50V,ID=3.5A
-
8.7
-
S
Input capacitance
Ciss
VDS=25V,
-
1100
1430
Reverse transfer capacitance
Crss
VGS=0V,
-
15
20
Output capacitance
Coss
f=1MHz
-
135
175
tr
VDD=200V,
-
30
70
ton
ID=7.0A ，
-
80
170
-
65
140
-
60
130
-
29
38
-
7
-
-
14.5
-
Min
Type
Max
Unit
Rise time
Turn-on time
Switching time
Fall time
tf
Turn-off time
ns
RG=25Ω，
(Note4,5)
toff
Total gate charge(gate-source
pF
VDD=480V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=7.0A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
IDR
-
-
-
7.0
A
Pulse drain reverse current
IDRP
-
-
-
28
A
Forward voltage(diode)
VDSF
IDR=7.4A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=7.4A,VGS=0V,
-
320
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
2.4
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH IAS=7A,VDD=50V,RG=0Ω ,Starting TJ=25℃
3.ISD≤7.0A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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7N6
0
SFF
FF7N6
7N60
Fig.1 On-State Characteristics
Fig.3 On Resistance variation vs
Fig.2 Transfer Current characteristics
Fig.4 Body Diode Forward Voltage
Variation with Source Current
Drain Current
and temperature
Fig.5 On-Resistance Variation vs
Fig.6 Gate Charge Characteristics
Junction Temperature
3/7
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7N6
0
SFF
FF7N6
7N60
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current vs
Case Temperature
Fig.9 Transient Thermal Response curve
4/7
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7N6
0
SFF
FF7N6
7N60
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Uncamped Inductive Switching Test Circuit & Waveform
5/7
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7N6
0
SFF
FF7N6
7N60
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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7N6
0
SFF
FF7N6
7N60
20
F Pa
cka
ge Dim
ension
TO-2
-220
20F
Pac
kage
Dime
Unit:mm
7/7
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