WFP830B
Silicon N-Channel MOSFET
Features
�
5A,500V, RDS(on)(Max1.6Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 18nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power
factor correction and half bridge and full bridge resonant topology
line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
500
V
Continuous Drain Current(@Tc=25℃)
5
A
Continuous Drain Current(@Tc=100℃)
2.9
A
20
A
±30
V
Drain Source Voltage
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
300
mJ
EAR
Repetitive Avalanche Energy
(Note1)
7.3
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ ns
73
W
0.58
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
1.71
℃/W
RQCS
Thermal Resistance , Case-to-Sink
-
0.5
-
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
Rev.A Feb.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WFP830B
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=500V,VGS=0V
-
-
1
µA
10
µA
Drain cut -off current
IDSS
VDS=400V,TC=125℃
Drain -source breakdown voltage
V(BR)DSS
Breakdown voltage Temperature
△BVDSS/
ID=250 µA,VGS=0V
500
-
-
V
-
0.5
-
V/℃
ID=250µA,Referenced
Coefficient
△TJ
to 25℃
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
3
-
4.5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=2.5A
-
1.43
1.6
Ω
Forward Transconductance
gfs
VDS=40V,ID=2.5A
-
5.2
-
S
Input capacitance
Ciss
VDS=25V,
-
480
625
Reverse transfer capacitance
Crss
VGS=0V,
-
15
20
Output capacitance
Coss
f=1MHz
-
80
105
VDD=250V,
-
46
100
ID=5A
-
12
35
RG=25Ω
-
48
105
-
50
110
-
18
24
-
2.2
-
-
9.7
-
Min
Type
Max
Unit
Rise time
tr
Turn-on time
ton
Switching time
pF
ns
Fall time
tf
Turn-off time
(Note4,5)
toff
Total gate charge(gate-source
VDD=400V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=5A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
IDR
-
-
-
5
A
Pulse drain reverse current
IDRP
-
-
-
20
A
Forward voltage(diode)
VDSF
IDR=5A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=5A,VGS=0V,
-
263
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
1.9
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=21.5mH IAS=5A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤5A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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WFP830B
Fig.1 On State Characteristics
Fig.3 On-Resistance Variation vs
Drain Current And Gate Voltage
Fig.5 Capacitance Characteristis
Fig.2 Transfer Characteristics
Fig.4 Body Diode Forward Voltage
Variation with Source Current
and Temperature
Fig.6 Gate Charge Characteristics
3/7
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WFP830B
Fig.7 Breakdown Voltage Variation
Vs Temperature
Fig.9 Maximum Safe Operation Area
Fig.8 On-Resistance Variation
vs.Temperature
Fig.10 Maximum Drain Current
vs Case temperature
Fig.11 Transient thermal Response Curve
4/7
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WFP830B
Fig.12 Gate Test circuit & Waveform
Fig.13 Resistive Switching Test Circuit & Waveform
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
5/7
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WFP830B
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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WFP830B
TO-220 Package Dimension
Unit:mm
7/7
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