R13003 D1 WB WBR 13003D High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA ◆ Built-in freewheeling diode rip General Desc scrip ripttion This Device is designed fo r high volt age , High speed switching characteristics required such as lighting system, switching mode power supply. ngs Absolute Max axiimum Rati tin Symbol Parameter Test Conditions Value Units VCES Collector-Emitter Voltage VBE = 0 700 V VCEO Collector-Emitter Voltage IC = 1mA 400 V VEBO Emitter-Base Voltage IE= 0.1mA 9 V IC Collector Current 1.5 A ICP Collector pulse Current 3.0 A IB Base Current 0.75 A IBM Base Peak Current 1.5 A PC Total Dissipation at Tc = 25℃ 20 W TJ Operation Junction emperature 150 ℃ -55 ~ 150 ℃ TSTG Storage Temperature tP = 5ms 1/ 4 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. R13003 D1 WB WBR 13003D arac Elec ecttrical Ch Cha actteristics (Tc = 25° C) Symbol Parameter Test Conditions Value Min Typ Units Max BVCBO Collector-Base Breakdown Voltage Ic=1mA,Ib=0 700 V BVCEO Collector-Base Breakdown Voltage Ic=10mA,Ib=0 400 - - V VCE(sat) Collector-Emitter Saturation Voltage Ic=200mA,Ib=100mA - - 1.6 V VBE(sat) Base-Emitter Saturation Voltage Ic=200mA,Ib=100mA - - 1.2 V ICBO Collector-Base Cutoff Current Vcb=600V,Ie=0mA - - 0.1 mA ICEO Collector-Emitter Cutoff Current Vce=400V,Ib=0mA - - 0.1 mA IEBO Emitter- Base Cutoff Current Veb=9V,Ic=0mA - - 0.1 mA hFE DC Current Gain tr Rise Time ts Storage Time tf Fall Time Vce=20V,Ic=20mA 10 - 40 Vce=5V, Ic=1mA 9 - - 3 IC=0.1A - - 1 5 ㎲ 1 Note te:: Pulse Test : Pulse width 300, Duty cycle 2% 2/ 4 Steady, keep you advance R13003 D1 WB WBR 13003D OLLEC TOR CURRENT IC[A],C IC[A],CO LLECT g.1DC Curr ent Gain Fi Fig Curre Fig.2 Power Derating h -I FE V BEsa satt V C CEsa satt -I C -I C 3/ 4 Steady, keep you advance R13003 D1 WB WBR 13003D 126 Packa ge Dim ensio n TOO-126 ackag ime ion Unit: mm 4/ 4 Steady, keep you advance