WINSEMI WBR13003D1

R13003
D1
WB
WBR
13003D
High Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed
◆ High Voltage Capability
◆ Wide Reverse Bias SOA
◆ Built-in freewheeling diode
rip
General Desc
scrip
ripttion
This Device is designed fo r high volt age , High speed
switching characteristics required such as lighting system,
switching mode power supply.
ngs
Absolute Max
axiimum Rati
tin
Symbol
Parameter
Test Conditions
Value
Units
VCES
Collector-Emitter Voltage
VBE = 0
700
V
VCEO
Collector-Emitter Voltage
IC = 1mA
400
V
VEBO
Emitter-Base Voltage
IE= 0.1mA
9
V
IC
Collector Current
1.5
A
ICP
Collector pulse Current
3.0
A
IB
Base Current
0.75
A
IBM
Base Peak Current
1.5
A
PC
Total Dissipation at Tc = 25℃
20
W
TJ
Operation Junction emperature
150
℃
-55 ~ 150
℃
TSTG
Storage Temperature
tP = 5ms
1/ 4
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
R13003
D1
WB
WBR
13003D
arac
Elec
ecttrical Ch
Cha
actteristics (Tc = 25° C)
Symbol
Parameter
Test Conditions
Value
Min
Typ
Units
Max
BVCBO
Collector-Base Breakdown Voltage
Ic=1mA,Ib=0
700
V
BVCEO
Collector-Base Breakdown Voltage
Ic=10mA,Ib=0
400
-
-
V
VCE(sat)
Collector-Emitter Saturation Voltage
Ic=200mA,Ib=100mA
-
-
1.6
V
VBE(sat)
Base-Emitter Saturation Voltage
Ic=200mA,Ib=100mA
-
-
1.2
V
ICBO
Collector-Base Cutoff Current
Vcb=600V,Ie=0mA
-
-
0.1
mA
ICEO
Collector-Emitter Cutoff Current
Vce=400V,Ib=0mA
-
-
0.1
mA
IEBO
Emitter- Base Cutoff Current
Veb=9V,Ic=0mA
-
-
0.1
mA
hFE
DC Current Gain
tr
Rise Time
ts
Storage Time
tf
Fall Time
Vce=20V,Ic=20mA
10
-
40
Vce=5V, Ic=1mA
9
-
-
3
IC=0.1A
-
-
1
5
㎲
1
Note
te::
Pulse Test : Pulse width 300, Duty cycle 2%
2/ 4
Steady, keep you advance
R13003
D1
WB
WBR
13003D
OLLEC
TOR CURRENT
IC[A],C
IC[A],CO
LLECT
g.1DC Curr
ent Gain
Fi
Fig
Curre
Fig.2 Power Derating
h -I
FE
V
BEsa
satt
V
C
CEsa
satt
-I
C
-I
C
3/ 4
Steady, keep you advance
R13003
D1
WB
WBR
13003D
126 Packa
ge Dim
ensio
n
TOO-126
ackag
ime
ion
Unit: mm
4/ 4
Steady, keep you advance