WBP3308 High Voltage Fast-Switching NPN Power Transistor Features ■ Very high switching speed ■ High Voltage Capability ■ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test Conditions Value Units VCBO Collect-Emitter Voltage VBE=0 900 V VCEO Collector-Emitter Voltage IB=0 500 V VEBO Emitter-Base Voltage IC=0 7 V IC Collector Current 7 A ICP Collector pulse Current 14 A IB Base Current 3 PC Total Dissipation at Tc=25℃ 45 W TJ Operation Junction Temperature 150 ℃ TSTG Storage Temperature -55~150 ℃ Value Units 2.78 ℃/W (Note) Thermal Characteristics Symbol RӨJC Parameter Thermal Resistance Junction to Case Rev.A02 Jun.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WBP3308 Electrical Characteristics (T =25℃ unless otherwise noted) C Symbol Parameter Test conditions Value Min Typ Max Units ICBO Collector Cut-off Current VCB=500V, Ie=0A - - 10 µA IEBO Emitter Cut-off Current VEB=5V, Ic=0A - - 10 µA BVCBO Collector-Base Breakdown Voltage Ic=1mA,Ie=0 900 1100 - V BVCEO Collector-Emitter Breakdown Voltage Ic=5mA,Ib=open 500 560 - V BVEBO Emitter-Base Breakdown Voltage Ie=1mA,Ic=0 7 9 - V VCE(sat) Collector -Emitter Saturation Voltage Ic=3A,Ib=0.6A - - 1 V VBE(sat) Base -Emitter saturation Voltage Ic=3A,Ib=0.6A - - 1.5 V Vce=5V,Ic=0.6A 20 - 50 hFE DC Current Gain Vce=5V,Ic=3A 8 - - fT Gain-Bandwidth Product Vce=10V,Ic=0.6A - - 18 MHz Cob Output Capacitance VCB=10V, f=1MHz - - 80 pF ton Turn on Time VCC=5V,IC=0.5A - - 0.6 µs ts Storage Time VCC=5V,IC=0.5A 3 - 8 µs tf Fall Time VCC=5V,IC=0.5A - - 0.4 µs Note: Pulse Test: Pulse width≤300µs,Duty cycle 10% 2/6 Steady, keep you advance WBP3308 nt VS Fig. 1 Collector Curre Current Collector-Emitter Voltage Fig. 3 DC Current Gain nt VS Fig. 2 Collector Curre Current -Base Voltage Emitter Emitter-Base Fig. 4 Collector-Emitter Saturation Voltage -Emitter Saturation Voltage Fig. 5 Base Base-Emitter 6 Switching Time Fig. Fig.6 3/6 Steady, keep you advance WBP3308 7 Safe Operation Area Fig. Fig.7 9 Thermal Resistance Fig. Fig.9 8 Reverse Biased Safe Operation Area Fig. Fig.8 10 Power Derating Fig. Fig.10 4/6 Steady, keep you advance WBP3308 Fig.11 Inductive Load Switching & RBSOA Test Circuit Fig.12 Inductive Load Switching &RBSOA Test Circuit 5/6 Steady, keep you advance WBP3308 To220 Package Dimension To-220 Unit:mm 6/6 Steady, keep you advance