5HB03N8 ment mode MOSFET H-Bridge 30V SO8 Complementary enhance enhancem Summary vice De Dev N-CH P-CH V(BR)D SS (BR)DS 30V -30V RDS(on) ID C TA= 25 25°C 25mΩ @ VGS= 10V 5.0A 45mΩ @ VGS= 4.5V 3.9A 50m Ω @ VGS= -10V -4.1A 75mΩ @ VGS= -4.5V -3.3A QG 9.0nC 12.7nC P1S/P2S Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. P1G P2G Features • • P1D/N1D 2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive DC Motor control • DC-AC Inverters N1S/N2S Ordering information vice De Dev Reel size es) (inch (inche 5HB03N8 13 Tape width (mm) 12 nti Qua Quan titty per reel 2,500 Device marking WFS 5HB03N8 Issue 1.0 - April 2010 N2G N1G Applications • P2D/N2D 1 5HB03N8 Absolute maximum ratings Parameter Symbol Pnel chan chann -30 Unit Drain-Source voltage VDSS Nnel chan chann 30 Gate-Source voltage VGS ±20 ±20 V ID 4.98 -4.13 A (b) 3.98 -3.31 (a) 3.98 -3.36 (f) 4.17 -3.51 IDM 22.9 -19.6 A IS 2.0 -2.0 A ISM 22.9 -19.6 A Continuous Drain current @ VGS= 10V; TA=25°C @ VGS= 10V; TA=70°C @ VGS= 10V; TA=25°C @ VGS= 10V; TL=25°C Pulsed Drain current @ VGS= 10V; TA=25°C (b) (c) Continuous Source current (Body diode) at TA =25°C Pulsed Source current (Body diode) at TA =25°C Power dissipation at TA =25°C Linear derating factor Power dissipation at TA =25°C Linear derating factor Power dissipation at TL =25°C Linear derating factor (c) (a) (b) 0.87 PD W mW/°C 6.94 (b) 1.35 PD W mW/°C 10.9 (f) PD Operating and storage temperature range V 0.95 0.98 7.63 7.81 W mW/°C Tj, Tstg -55 to 150 °C Symbol Value Unit RθJA 144 °C/W RθJA 92 °C/W RθJA 106 °C/W RθJA 254 °C/W Thermal resistance Parameter Junction to ambient Junction to ambient Junction to ambient Junction to ambient Junction to lead (a) (b) (d) (e) (f) RθJL 131 128 °C/W NOTES: (a) (b) (c) (d) (e) (f) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state condition with one active die. Same as note (a), except the device is measured at t ≤ 10 sec. Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state condition with one active die. For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions; the device is measured when operating in a steady-state condition with one active die. Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state condition with one active die. Issue 1.0 - April 2010 2 5HB03N8 Thermal characteristics Limited 1 DC RDS(ON) -ID Drain Current (A) ID Drain Current (A) RDS(ON) 10 1s 100ms 100m 10ms 10m 100us 1 DC 1s 100ms 10ms 1 1ms Note (a) 10m Single Pulse, T amb =25°C 0.1 Limited 100m 1ms Note (a) 10 100us Single Pulse, T amb =25°C 0.1 10 V DS Drain-Source Voltage (V) 1 10 -VDS Drain-Source Voltage (V) hann el Sa N-c -ch nne Saffe Operating Area chann el Sa PP-c nne Saffe Operating Area One Active Die 25 x 25mm 1oz 120 100 80 D=0.5 60 40 Single Pulse D=0.2 D=0.05 20 0 100µ D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) Maximum Power (W) 10 1 1m 10m 100m 1 10 100 Pulse Width (s) Pulse Power Dissipat atiion Issue 1.0 - April 2010 0.5 0.0 0 25 50 75 100 Derating Curve One Active Die Single Pulse Tamb=25°C 100µ Any one active die Temperature (°C) nce Trans ansiient Thermal Impeda edan 100 Max Power Dissipation (W) Thermal Resistance (°C/W) 1.0 140 3 1k 125 150 5HB03N8 wise stated) N-channel electrical characteristics (at Tamb = 25 25°°C unless other otherw Parameter Symbol Min. Drain-Source breakdown voltage V(BR)DSS 30 Zero Gate voltage Drain current IDSS IGSS Typ. Max. Unit ons Conditi Conditio Static Gate-Body leakage Gate-Source threshold voltage VGS(th) 1.0 V ID = 250μA, VGS= 0V 0.5 µA VDS= 30V, VGS= 0V ±100 nA VGS= ±20V, VDS= 0V 3.0 V ID= 250μA, VDS= VGS 0.025 0.045 Ω VGS= 10V, ID= 5A VGS= 4.5V, ID= 4A VDS= 15V, ID= 5A Static Drain-Source (a) on-state resistance RDS(on) Forward (a) (c) Transconductance gfs 11.8 S Input capacitance Ciss 430 pF Output capacitance Coss 101 pF Reverse transfer capacitance Crss 56 pF Turn-on-delay time td(on) 2.5 ns Rise time tr 3.3 ns Turn-off delay time td(off) 11.5 ns Fall time tf 6.3 ns Total Gate charge Qg 9.0 nC Gate-Source charge Qgs 1.7 nC Gate-Drain charge Qgd 2.0 nC VSD 0.82 Dynamic Capacitance Switching (c) VDS= 15V, VGS= 0V f= 1MHz (b) (c) Gate charge VDD= 15V, VGS= 10V ID= 1A RG ≅ 6Ω, (c) VDS=15V, VGS= 10V ID= 5A Source –Dra Source– Draiin diode Diode forward voltage Reverse recovery time (a) (c) Reverse recovery charge (c) 1.2 trr 12 ns Qrr 4.9 nC NOTES: (a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (b) Switching characteristics are independent of operating junction temperature. (c) For design aid only, not subject to production testing Issue 1.0 - April 2010 V 4 IS= 1.7A, VGS= 0V IS= 2.1A, di/dt= 100A/μs 5HB03N8 N-channel typical characteristics T = 150°C VGS 4.5V 10 4V 3.5V 1 3V 0.1 T = 25°C 2.5V 0.01 0.1 1 0.01 0.01 3 4 V GS Gate-Source Voltage (V) R DS(on) Drain-Source On-Resistance (Ω) stics Typical Transfer Characteri ris Normalised R DS(on) and VGS(th) T = 25°C 1000 V GS 100 3V 3.5V 1 4V 4.5V 0.1 0.01 0.01 10V 0.1 1 10 1 10 V GS = 10V 1.6 ID = 5A 1.4 R DS(on) 1.2 1.0 0.8 VGS(th) VGS = VDS 0.6 0.4 -50 ID = 250uA 0 50 100 Tj Junction Temperature (°C) 150 10 1 T = 150°C 0.1 T = 25°C 0.01 1E-3 0.2 0.4 0.6 0.8 VSD Source-Drain Voltage (V) e Fo e Source-D -Drrain Diod ode Forrward Voltag age ID Drain Current (A) nce v Drain Cu On-Resista stan Currrent Issue 1.0 - April 2010 0.1 sed Curves v Temperature No Norrmali lis ISD Reverse Drain Current (A) ID Drain Current (A) 0.1 10 2V stics Outpu putt Characteri ris T = 150°C T = 25°C 2.5V VDS Drain-Source Voltage (V) VDS = 10V 2.5V 3.5V 0.1 10 2 VGS 4V 3V stics Outpu putt Characteri ris 1 4.5V 1 V DS Drain-Source Voltage (V) 10 10V 10 ID Drain Current (A) ID Drain Current (A) 10V 5 1.0 5HB03N8 N-channel typical characteristics –continued 10 VGS Gate-Source Voltage (V) 600 C Capacitance (pF) GS 400 CISS COSS 300 C 0 1 10 I D = 5A 9 7 6 5 4 VDS = 15V 1 0 0 1 2 3 4 5 6 7 8 9 Q - Charge (nC) VDS - Drain - Source Voltage (V) Capac apaciitance v Drain-Source Voltage e-Source Voltage v Ga Gat ate Gatte Charge Test circuits Current regulator QG 12V VG QGS 50k Same as D.U.T QGD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit VDS 90% R VGS D V DS RG 10% VGS td(on) tr t(on) td(off) tr t(on) Switching time waveforms Issue 1.0 - April 2010 Switching time test circuit 6 VDD 5HB03N8 wise stated) P-channel electrical characteristics (at Tamb = 25 25°°C unless other otherw Parameter Symbol Min. Drain-Source breakdown voltage V(BR)DSS -30 Zero Gate voltage Drain current IDSS IGSS Typ. Max. Unit ons Conditi Conditio Static Gate-Body leakage Gate-Source threshold voltage VGS(th) -1.0 V ID = -250μA, VGS= 0V -0.5 µA VDS= -30V, VGS= 0V ±100 nA VGS= ±20V, VDS= 0V -3.0 V ID= -250μA, VDS= VGS 0.050 0.075 Ω VGS= -10V, ID= -5A VGS= -4.5V, ID= -4A VDS= -15V, ID= -5A Static Drain-Source (a) on-state resistance RDS(on) Forward (a) (c) Transconductance gfs 14 S Input capacitance Ciss 670 pF Output capacitance Coss 126 pF Reverse transfer capacitance Crss 70 pF Turn-on-delay time td(on) 1.9 ns Rise time tr 3.0 ns Turn-off delay time td(off) 30 ns Fall time tf 21 ns Dynamic Capacitance Switching (c) VDS= -15V, VGS= 0V f= 1MHz (b) (c) Gate charge VDD= -15V, VGS= -10V ID= -1A RG ≅ 6Ω (c) Total Gate charge Qg 12.7 nC Gate-Source charge Qgs 2.0 nC Gate-Drain charge Qgd 2.4 nC VSD -0.82 trr 16.5 ns Qrr 11.5 nC VDS= -15V, VGS= -10V ID= -5A Source –Dra Source– Draiin diode Diode forward voltage Reverse recovery time (a) (c) Reverse recovery charge (c) -1.2 NOTES: (a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (b) Switching characteristics are independent of operating junction temperature. (c) For design aid only, not subject to production testing Issue 1.0 - April 2010 7 V IS= -1.7A, VGS= 0V IS= -2.1A, di/dt= 100A/μs 5HB03N8 P-channel typical characteristics -ID Drain Current (A) 4.5V 4V 10V T = 150°C -ID Drain Current (A) 10V T = 25°C 10 3.5V 3V 1 2.5V 0.1 VGS 0.01 4V 3.5V 3V 10 2.5V 2V 1 VGS 0.1 0.1 1 10 0.1 -V DS Drain-Source Voltage (V) 1 10 -VDS Drain-Source Voltage (V) Outpu putt Characteristics aracteri st Outpu putt Ch Cha rist stiics 1.6 and V GS(th) VDS = 10V 0.1 2.0 T = 25°C 2.5 3.0 3.5 -V GS Gate-Source Voltage (V) R DS(on) Drain-Source On-Resistance (Ω) ansfer Characteristics Typ ypiical Tr Tra 2.5V T = 25°C VGS 3V 3.5V 4V 4.5V 0.1 10V 0.01 0.01 0.1 1 10 RDS(on) 1.0 0.8 VGS = VDS ID = 250uA 0.6 0.4 -50 0 50 VGS(th) 100 Tj Junction Temperature (°C) 150 10 T = 150°C 1 0.1 T = 25°C 0.01 Vgs = 0V 1E-3 0.2 0.4 0.6 0.8 -VSD Source-Drain Voltage (V) age Source-D ce-Drrain Diode Forward Volt lta -I D Drain Current (A) rr ent On-Resistance v Drain Cu Curr rre Issue 1.0 - April 2010 ID = 5A sed Cu No Norrmali lis Currves v Temperature 10 1 Normalised R 1 VGS = 10V 1.4 1.2 DS(on) T = 150°C -I SD Reverse Drain Current (A) -ID Drain Current (A) 10 8 1.0 5HB03N8 P-channel typical characteristics –continued 10 V = f0V = 1MHz GS C Capacitance (pF) 800 ISS COSS CRSS 400 200 0 1 -V 10 -V GS Gate-Source Voltage (V) 1000 9 ID = 5A 8 7 5 4 3 2 VDS = 15V 1 0 0 5 10 15 Q - Charge (nC) - Drain - Source Voltage ( V) Capac nce v Drain-Source Voltage apaciita tan ource Voltag e v Gate Charge Gate-S -So age Test circuits Current regulator QG 12V VG QGS 50k 0.2 F Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% R V GS D V DS RG 10% VGS tr td(off) t(on) tr t(on) Switching time waveforms Issue 1.0 - April 2010 Pulse width 1 S Duty factor 0.1% td(on) Switching time test circuit 9 VDD 5HB03N8 Packaging details - SO8 DIM Inches Millimeters DIM Inches Min. Millimeters Min. Max. Min. Max. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 θ 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 - - - - - L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Not e: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Note Issue 1.0 - April 2010 10 Min. Max. 1.27 BSC