ZXMC4559DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.055 ; ID= 4.7A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.105 ; ID= -3.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • Motor Drive • LCD backlighting Q1 = N-CHANNEL Q2 = P-CHANNEL ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMC4559DN8TA 7’‘ 12mm 500 units ZXMC4559DN8TC 13’‘ 12mm 2500 units PINOUT DEVICE MARKING ZXMC 4559 Top view ISSUE 1 - SEPTEMBER 2002 1 ZXMC4559DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL N-Channel P-Channel UNIT Drain-Source Voltage V DSS 60 -60 V Gate-Source Voltage V GS ⫾20 ⫾20 V Continuous Drain Current@V GS =10V; T A =25⬚C (b)(d) @V GS =10V; T A =25⬚C (b)(d) @V GS =10V; T A =25⬚C (a)(d) ID 4.7 3.7 3.6 -3.5 -2.8 -2.6 A A Pulsed Drain Current (c) I DM 17 -12.6 A Continuous Source Current (Body Diode)(b) IS 3.4 -3.2 A Pulsed Source Current (Body Diode)(c) I SM 17 -12.6 A Power Dissipation at TA=25°C (a)(d) Linear Derating Factor PD 1.25 10 W mW/°C Power Dissipation at TA=25°C (a)(e) Linear Derating Factor PD 1.8 14 W mW/°C Power Dissipation at TA=25°C (b)(d) Linear Derating Factor PD 2.1 17 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) R θJA 100 °C/W Junction to Ambient (b)(e) R θJA 69 °C/W Junction to Ambient (b)(d) R θJA 58 °C/W Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature. (d) For a device with one active die. (e) For device with 2 active die running at equal power. ISSUE 1 - SEPTEMBER 2002 2 ZXMC4559DN8 CHARACTERISTICS RDS(ON) -ID Drain Current (A) ID Drain Current (A) RDS(ON) 10 Limited DC 1 1s 100ms 100m 1ms 100us 10m DC 1s 100ms 10ms 1ms Note (a)(f) 100us 10m Single Pulse, Tamb=25°C Single Pulse, Tamb=25°C 0.1 1 100m 10ms Note (a)(f) 10 Limited 1 10 0.1 100 VDS Drain-Source Voltage (V) 1 10 100 -VDS Drain-Source Voltage (V) N-channel Safe Operating Area P-channel Safe Operating Area Max Power Dissipation (W) Thermal Resistance (°C/W) 2.0 100 80 60 D=0.5 40 Single Pulse D=0.2 20 0 100µ D=0.05 D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) MaximumPower (W) Single Pulse Tamb=25°C 1 1m 10m 100m 1 10 One active die 1.0 0.5 0.0 0 25 50 75 100 Derating Curve 10 100µ Two active die Temperature (°C) Transient Thermal Impedance 100 1.5 100 1k Pulse Width (s) Pulse Power Dissipation ISSUE 1 - SEPTEMBER 2002 3 125 150 ZXMC4559DN8 N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. 60 TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS V I D =250µA, V GS =0V Zero Gate Voltage Drain Current I DSS 1.0 A V DS =60V, V GS =0V Gate-Body Leakage I GSS 100 nA V GS =⫾20V, V DS =0V Gate-Source Threshold Voltage V GS(th) V ⍀ ⍀ I =250A, V DS = V GS D V GS =10V, I D =4.5A V GS =4.5V, I D =4.0A V DS =15V,I D =4.5A 1.0 Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) 0.055 0.075 g fs 10.2 S Input Capacitance C iss 1063 pF Output Capacitance C oss 104 pF Reverse Transfer Capacitance C rss 64 pF Turn-On Delay Time t d(on) 3.8 ns DYNAMIC (3) V DS =30V, V GS =0V, f=1MHz SWITCHING(2) (3) Rise Time tr 4.0 ns Turn-Off Delay Time t d(off) 26.2 ns Fall Time tf 10.6 ns Gate Charge Qg 11.0 nC Total Gate Charge Qg 20.4 nC Gate-Source Charge Q gs 4.1 nC Gate-Drain Charge Q gd 5.1 nC Diode Forward Voltage (1) V SD 0.85 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr V DD =30V, I D =1A R G 6.0Ω, V GS =10V @ V DS =30V,V GS =5V, I D =4.5A V DS =30V,V GS =10V, I D =4.5A SOURCE-DRAIN DIODE 1.2 V T J =25°C, I S =5.5A, V GS =0V 22 ns 21.4 nC T J =25°C, I F =2.2A, di/dt= 100A/s NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - SEPTEMBER 2002 4 ZXMC4559DN8 P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. -60 TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS V I D =-250µA, V GS =0V Zero Gate Voltage Drain Current I DSS -1.0 A V DS =-60V, V GS =0V Gate-Body Leakage I GSS 100 nA V GS =⫾20V, V DS =0V Gate-Source Threshold Voltage V GS(th) V ⍀ ⍀ I =-250A, V DS = V GS D V GS =-10V, I D =-3.5A V GS =-4.5V, I D =-3.1A V DS =-15V,I D =-3.5A -0.8 Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) 0.105 0.135 g fs 7.8 S Input Capacitance C iss 1021 pF Output Capacitance C oss 83.1 pF Reverse Transfer Capacitance C rss 56.4 pF Turn-On Delay Time t d(on) 2.33 ns DYNAMIC (3) V DS =-30 V, V GS =0V, f=1MHz SWITCHING(2) (3) Rise Time tr 13.5 ns Turn-Off Delay Time t d(off) 25.1 ns Fall Time tf 15.4 ns Gate Charge Qg 12.2 nC Total Gate Charge Qg 24.3 nC Gate-Source Charge Q gs 2.7 nC Gate-Drain Charge Q gd 3.8 nC Diode Forward Voltage (1) V SD -0.85 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr V DD =-30V, I D =-1A R G 6.0Ω, V GS =-10V @ V DS =-30V,V GS =-5V, I D =-3.5A V DS =-30V,V GS =-10V, I D =-3.5A SOURCE-DRAIN DIODE NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - SEPTEMBER 2002 5 -0.95 V T J =25°C, I S =-3.4A, V GS =0V 29.2 ns 39.6 nC T J =25°C, I F =-2A, di/dt= 100A/µs ZXMC4559DN8 N-CHANNEL TYPICAL CHARACTERISTICS 10V T = 150°C 4.5V ID Drain Current (A) ID Drain Current (A) T = 25°C 10 4V 3.5V 1 3V 0.1 VGS 2.5V 0.01 0.1 1 4.5V 10V 10 4V 3.5V 1 3V 2.5V 0.1 VGS 2V 0.01 10 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 1.4 Normalised RDS(on) and VGS(th) ID Drain Current (A) 10 T = 150°C 1 T = 25°C 0.1 VDS = 10V 0.01 2 3 4 RDS(on) 1.0 0.8 0.4 -50 5 100 150 Normalised Curves v Temperature T = 25°C ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (Ω) 50 100 2.5V VGS 100 3V 3.5V 10 4V 4.5V 1 10V 0.1 0.01 0 Tj Junction Temperature (°C) Typical Transfer Characteristics 0.01 VGS(th) VGS = VDS ID = 250uA 0.6 VGS Gate-Source Voltage (V) 1000 VGS = 10V ID = 4.5A 1.2 0.1 1 T = 150°C 10 0.1 0.01 0.2 10 ID Drain Current (A) T = 25°C 1 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) 1.2 Source-Drain Diode Forward Voltage On-Resistance v Drain Current ISSUE 1 - SEPTEMBER 2002 6 ZXMC4559DN8 N-CHANNEL TYPICAL CHARACTERISTICS 10 1600 C Capacitance (pF) 1400 VGS Gate-Source Voltage (V) VGS = 0V f = 1MHz 1200 1000 800 CISS COSS 600 CRSS 400 200 0 0.1 1 10 VDS - Drain - Source Voltage (V) ID = 4.5A 8 6 4 2 VDS = 30V 0 0 5 10 15 20 25 Q - Charge (nC) Gate-Source Voltage v Gate Charge Capacitance v Drain-Source Voltage ISSUE 1 - SEPTEMBER 2002 7 ZXMC4559DN8 P-CHANNEL TYPICAL CHARACTERISTICS 10V 4.5V -ID Drain Current (A) 3V 2.5V 1 -VGS 2V 0.1 0.01 0.1 1 10V T = 150°C 3.5V -ID Drain Current (A) T = 25°C 10 3.5V 3V 2.5V 1 2V -VGS 0.1 0.01 10 4.5V 10 -VDS Drain-Source Voltage (V) 1.5V 0.1 1 10 -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 1.8 1 T = 25°C -VDS = 10V 0.1 1 RDS(on) Drain-Source On-Resistance (Ω) Normalised RDS(on) and VGS(th) T = 150°C 2 3 VGS = -10V ID = - 3.5A 1.6 1.4 RDS(on) 1.2 1.0 VGS(th) 0.8 VGS = VDS ID = -250uA 0.6 0.4 -50 4 0 50 100 150 -VGS Gate-Source Voltage (V) Tj Junction Temperature (°C) Typical Transfer Characteristics Normalised Curves v Temperature 2.5V T = 25°C -ISD Reverse Drain Current (A) -ID Drain Current (A) 10 -VGS 10 3V 3.5V 1 4V 4.5V 10V 0.1 0.1 1 10 T = 150°C 1 T = 25°C 0.1 0.01 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD Source-Drain Voltage (V) -ID Drain Current (A) On-Resistance v Drain Current Source-Drain Diode Forward Voltage ISSUE 1 - SEPTEMBER 2002 8 ZXMC4559DN8 P-CHANNEL TYPICAL CHARACTERISTICS 10 VGS = 0V f = 1MHz 1200 -VGS Gate-Source Voltage (V) C Capacitance (pF) 1400 1000 800 CISS 600 COSS 400 CRSS 200 0 0.1 1 10 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage ID = -3.5A 8 6 4 2 VDS = -30V 0 0 5 10 15 20 25 Q - Charge (nC) Gate-Source Voltage v Gate Charge ISSUE 1 - SEPTEMBER 2002 9 ZXMC4559DN8 PACKAGE OUTLINE PACKAGE DIMENSIONS INCHES MILLIMETRES DIM MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 A1 0.004 0.010 0.10 0.25 D 0.189 0.197 4.80 5.00 H 0.228 0.244 5.80 6.20 E 0.150 0.157 3.80 4.00 L 0.016 0.050 0.40 1.27 e CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES 0.050 BSC 1.27 BSC b 0.013 0.020 0.33 0.51 c 0.008 0.010 0.19 0.25 ⍜ 0⬚ 8⬚ 0⬚ 8⬚ h 0.010 0.020 0.25 0.50 © Zetex plc 2002 Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] USA Telephone: (631) 360 2222 Fax: (631) 360 8222 [email protected] Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - SEPTEMBER 2002 10