WFSA5406 N- Channel and P-Channel Silicon MOSFETs Features ■ Low On-resistance. ■ Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4.5V/-4.5V supply voltage contained in a single package. ■ High-density mounting. ■ RoHS compliant. SOP-8 Applications ■ General-Purpose Switching Device ■ For motor drives, inverters. Absolute Maximum Ratings at Ta=250C Parameter Symbol Ratings Conditions N-Ch P-Ch Unit Drain-to-Source Voltage VDSS 60 -60 V Gate-to-Source Voltage VGSS +25 +25 V Drain Current (DC) ID 5 -3.5 A Drain Current (Pulse) IDP 20 -14 A Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature PW≤10uS, duty cycle≤1% Mounted on a ceramic board 2 (1000mm ×0.8mm) 1unit Mounted on a ceramic board 2 (1000mm ×0.8mm) Tstg Rev.A Feb.2012 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. 1.3 W 1.7 W 150 0 -55~+150 0 C C WFSA5406 N-Channel Electrical Characteristics at Ta=250C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions Ratings min typ max Unit V(BR)DSS ID=250uA, VGS=0V 60 - - V Zero-Gate Voltage Drain Current IDSS VDS=48V, VGS=0V - - 1 uA Gate-to-Source Leakage Current IGSS VGS=+25V, VDS=0V - - +100 nA VGS(th) VDS= VGS, ID=250uA 1 2 2.5 V RDS(ON) ID=5A, VGS=10V - 38 52 mΩ RDS(ON) ID=4A, VGS=4.5V - 55 75 mΩ Gate Threshold Voltage Static Drain-to-Source On-State Resistance Input Capacitance Ciss VDS=30V, - 915 - Output Capacitance Coss VGS=0V, - 70 - Reverse Transfer Capacitance Crss f=1MHz - 45 - Turn-on Delay Time td(on) VGEN=10V, - 9 17 tr VDS=30V, - 6 12 RL=30Ω, ID=1A, - 25 46 tf RGEN=6Ω - 5 10 Total Gate Charge Qg VDS=30V, - 19 27 Gate-to-Source Charge Qgs VGS=10V, - 4.4 - Gate-to-Drain “Miller” Charge Qgd ID=5A - 4.4 - Diode Forward Voltage VSD IS=2.5A, VGS=0V - 0.8 1.1 Rise Time Turn-off Delay Time Fall Time td(off) pF nS nC V 2/10 Steady, keep you advance WFSA5406 N-Channel Typical Characteristics at Ta=250C 3/10 Steady, keep you advance WFSA5406 4/10 Steady, keep you advance WFSA5406 P-Channel Electrical Characteristics at Ta=250C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions Ratings min typ max Unit V(BR)DSS ID=-250uA, VGS=0V - 60 - - V Zero-Gate Voltage Drain Current IDSS VDS=- 48V, VGS=0V - - -1 uA Gate-to-Source Leakage Current IGSS VGS=+25V, VDS=0V - - +100 nA VGS(th) VDS= VGS, ID=-250uA -1 -2 -2.5 V RDS(ON) ID=-3.5A, VGS=-10V - 80 100 mΩ RDS(ON) ID=-3.1A, VGS=- 4.5V - 100 135 mΩ Gate Threshold Voltage Static Drain-to-Source On-State Resistance Input Capacitance Ciss VDS=-30V, - 1050 - Output Capacitance Coss VGS=0V, - 70 - Reverse Transfer Capacitance Crss f=1MHz - 50 - Turn-on Delay Time td(on) VGEN=-10V, - 7 14 tr VDS=-30V, - 8 15 RL=30Ω, ID=-1A, - 47 86 tf RGEN=6Ω - 17 32 Total Gate Charge Qg VDS=-30V, - 22 31 Gate-to-Source Charge Qgs VGS=-10V, - 2.8 - Gate-to-Drain “Miller” Charge Qgd ID=-3.5A - 5 - Diode Forward Voltage VSD IS=-2.5A, VGS=0V - -0.8 -1.1 Rise Time Turn-off Delay Time Fall Time td(off) pF nS nC V 5/10 Steady, keep you advance WFSA5406 P-Channel Typical Characteristics at Ta=250C 6/10 Steady, keep you advance WFSA5406 7/10 Steady, keep you advance WFSA5406 SOP8 Package Dimension Unit:mm 8/10 Steady, keep you advance