WFSA5510 N- Channel and P-Channel Silicon MOSFETs Features ■ Low On resistance. ■ Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4.5V/-4.5V supply voltage contained in a single package. ■ High-density mounting. ■ Zener-Protected SOP-8 ■ RoHS compliant. Applications ■ Ultrahigh Speed Switching, ■ Motor Driver Applications Absolute Maximum Ratings at Ta=250C Parameter Symbol Ratings Conditions N-Ch P-Ch Unit Drain-to-Source Voltage VDSS Drain-Source Voltage 100 -100 V Gate-to-Source Voltage VGSS Gate-Source Voltage +20 +20 V Drain Current (DC) ID Continuous Drain Current 2 -2 A Drain Current (Pulse) IDP PW≤10uS, duty cycle≤1% 8 -8 A Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Maximum Junction Temperature Storage Temperature Tstg Storage Temperature Range Mounted on a ceramic board 1.3 (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) Rev.A Feb.2012 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. 1.7 W W 150 0 -55~+150 0 C C WFSA5510 N-Channel Electrical Characteristics at Ta=250C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions Ratings min typ max Unit V(BR)DSS ID=250uA, VGS=0V 100 - - V Zero-Gate Voltage Drain Current IDSS VDS=80V, VGS=0V - - 1 uA Gate-to-Source Leakage Current IGSS VGS=+16V, VDS=0V - - +10 nA VGS(th) VDS= VGS, ID=250uA 1.2 1.8 2.6 V RDS(ON) ID=2A, VGS=10V - 175 220 mΩ RDS(ON) ID=1.5A, VGS=4V - 220 310 mΩ Gate Threshold Voltage Static Drain-to-Source On-State Resistance Input Capacitance Ciss VDS=30V, - 470 - Output Capacitance Coss VGS=0V, - 40 - - 25 - Reverse Transfer Capacitance Crss f=1MHz Turn-on Delay Time td(on) VGEN=10V, - 6 12 tr VDS=30V, - 8 15 RL=30Ω, ID=1A, - 25 46 RGEN=6Ω - 20 37 Rise Time Turn-off Delay Time Fall Time td(off) tf Total Gate Charge Qg N-Channel - 12 17 Gate-to-Source Charge Qgs VDS=50V, VGS=10V, - 1.8 - Gate-to-Drain “Miller” Charge Qgd ID=2A - 1 - Diode Forward Voltage VSD IS=2.5A, VGS=0V - 0.75 1.3 pF nS nC V 2/10 Steady, keep you advance WFSA5510 N-Channel Typical Characteristics at Ta=250C 3/10 Steady, keep you advance WFSA5510 4/10 Steady, keep you advance WFSA5510 P-Channel Electrical Characteristics at Ta=250C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions Ratings min typ max Unit V(BR)DSS ID=-250uA, VGS=0V -100 - - V Zero-Gate Voltage Drain Current IDSS VDS=-80V, VGS=0V - - -1 uA Gate-to-Source Leakage Current IGSS VGS=+16V, VDS=0V - - +10 nA -1.2 -1.8 -2.6 V Gate Threshold Voltage Static Drain-to-Source On-State Resistance VGS(th) VDS= VGS, ID=-250uA RDS(ON) ID=-2A, VGS=-10V - 176 225 mΩ RDS(ON) ID=-1.5A, VGS=-4V - 225 315 mΩ Input Capacitance Ciss VDS=-30V, - 1050 - Output Capacitance Coss VGS=0V, - 70 - - 40 - Reverse Transfer Capacitance Crss f=1MHz Turn-on Delay Time td(on) VGEN=-10V, - 9 17 tr VDS=-30V, - 10 19 RL=30Ω, ID=1A, - 81 147 tf RGEN=6Ω - 82 149 Total Gate Charge Qg VDS=-50V, - 21.3 30 Gate-to-Source Charge Qgs VGS=-10V, - 3.2 - Gate-to-Drain “Miller” Charge Qgd ID=-2A - 4.5 - Diode Forward Voltage VSD IS=-2.5A, VGS=0V - -0.75 -1.3 Rise Time Turn-off Delay Time Fall Time td(off) pF nS nC V 5/10 Steady, keep you advance WFSA5510 P-Channel Typical Characteristics at Ta=250C 6/10 Steady, keep you advance WFSA5510 7/10 Steady, keep you advance WFSA5510 Switching Time Test Circuit 8/10 Steady, keep you advance WFSA5510 SOP8 Package Dimension Unit:mm 9/10 Steady, keep you advance