SB820 – SB8100 WTE POWER SEMICONDUCTORS 8.0A SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! ! ! ! ! Guard Ring for Transient Protection High Current Capability, Low Forward C Low Reverse Leakage Current High Surge Current Capability G Plastic Material has UL Flammability Classification 94V-O D B Mechanical Data ! ! ! ! ! ! A PIN1 2 F Case: TO-220A Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 2.24 grams (approx.) Mounting Position: Any Marking: Type Number TO-220A Dim Min Max A 14.9 15.1 B — 10.5 C 2.62 2.87 D 3.56 4.06 E 13.46 14.22 F 0.68 0.94 G 3.74 Ø 3.91 Ø H 5.84 6.86 I 4.44 4.70 J 2.54 2.79 K 0.35 0.64 L 1.14 1.40 P 4.95 5.20 All Dimensions in mm E P I L H J PIN 1 + + PIN 2 - Case K Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current SB850 SB860 SB880 SB8100 Unit VRRM VRWM VR 20 30 40 50 60 80 100 V VR(RMS) 14 21 28 35 42 56 70 V IO 8.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Forward Voltage @IF = 8.0A VFM @TA = 25°C @TA = 100°C IRM 0.5 50 mA Cj 700 pF RJC 6.9 K/W Tj, TSTG -65 to +150 °C Peak Reverse Current At Rated DC Blocking Voltage @TC = 95°C SB820 SB830 SB840 Typical Junction Capacitance (Note 1) Typical Thermal Resistance Junction to Case (Note 2) Operating and Storage Temperature Range 0.55 0.75 0.85 V Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 2. Thermal resistance junction to case mounted on heatsink. SB820 – SB8100 1 of 3 © 2002 Won-Top Electronics 10 IF, NSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE OUTPUT CURRENT (A) 40 8 6 4 2 Single Pulse Half-Wave 60 Hz Resistive or Inductive Load 0 10 40 60 80 100 120 140150 SB820 - SB840 20 SB850 - SB860 SB880 - SB8100 10 Tj = 25ºC Pulse Width = 300 µs 2% Duty Cycle 0.1 1.0 1.5 2.0 2.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 2000 150 Tj = 25ºC f = 1MHz 120 Cj, CAPACITANCE (pF) IFSM , PEAK FORWARD SURGE CURRENT (A) 0.5 0 TL, LEAD TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve 90 60 1000 30 8.3ms Single Half Sine-Wave JEDEC Method 100 0 1 10 0.1 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current SB820 – SB8100 2 of 3 1.0 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance © 2002 Won-Top Electronics 100 ORDERING INFORMATION Product No. Package Type Shipping Quantity SB820 TO-220A 50 Units/Tube SB830 TO-220A 50 Units/Tube SB840 TO-220A 50 Units/Tube SB850 TO-220A 50 Units/Tube SB860 TO-220A 50 Units/Tube SB880 TO-220A 50 Units/Tube SB8100 TO-220A 50 Units/Tube Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: [email protected] Internet: http://www.wontop.com SB820 – SB8100 We power your everyday. 3 of 3 © 2002 Won-Top Electronics