AS1333 D a ta S he e t 6 5 0 m A , St e p D o w n D C / D C C o n v e r t e r f o r P o r ta b l e A p p l i c a t i o n s 1 General Description 2 Key Features The AS1333 is a step-down DC-DC converter designed to power portable applications from a single Li-Ion battery. The device also achieves high-performance in mobile phones and other applications requiring low dropout voltage. ! PWM Switching Frequency: 2MHz ! Single Lithium-Ion Cell Operation ! Fixed Output Voltage (3.09V) ! Maximum load capability of 650mA The AS1333 steps down an input voltage of 3.25V to 5.5V to a fixed output voltage of 3.09V. ! High Efficiency (96% Typ at 3.6VIN, 3.09VOUT at 400mA) from internal synchronous rectification Fixed-frequency PWM operation minimizes RF interference. Shutdown function turns the device off and reduces battery consumption to 0.01µA (typ.). ! Current Overload Protection ! Thermal Overload Protection ! Soft Start ! Low Dropout Voltage (140 mΩ Typ PFET) ! 8-pin WL-CSP The AS1333 is available in a 8-pin WL-CSP package. A high switching frequency (2 MHz) allows use of tiny surface-mount components. Only three small external surface-mount components, an inductor and two ceramic capacitors are required. 3 Applications The AS1333 is an ideal solution for cellular phones, hand-held radios, RF PC cards, battery powered RF devices, and RFIC chipsets. Figure 1. Typical Application Circuit VIN VDD PVIN 10 µF 3.3 µH SW EN VOUT 3.09V AS1333 FB 10 µF PGND AGND NC www.austriamicrosystems.com Revision 1.02 1 - 16 AS1333 Data Sheet - P i n A s s i g n m e n t s 4 Pin Assignments Figure 2. Pin Configuration PVIN A1 VDD B1 EN C1 Top View Bottom View SW SW A2 C2 A3 PGND PGND A3 B3 AGND AGND B3 C3 FB FB C3 NC A2 C2 A1 PVIN B1 VDD C1 EN NC Pin Descriptions Table 1. Pin Descriptions Pin Name Pin Number PVIN A1 Description +2.7V to +5.5V Power Supply Voltage. Input to the internal PFET switch. Note: for guaranteed VOUT = 3.09V set VIN = 3.25V to 5.5V; +2.7V to +5.5V Power Supply Voltage. Analog Supply Input. VDD B1 EN C1 NC FB AGND PGND C2 C3 B3 A3 SW A2 www.austriamicrosystems.com Note: for guaranteed VOUT = 3.09V set VIN = 3.25V to 5.5V; Enable Input. Set this digital input high for normal operation. For shutdown, set low. May be connected to VDD, SGND or floating. Feedback Pin. Connect to the output at the output filter capacitor. Analog and Control Ground. Power Ground. Switch Pin. Switch node connection to the internal PFET switch and NFET synchronous rectifier. Connect to an inductor with a saturation current rating that exceeds the maximum switch peak current limit specification of the AS1333. Revision 1.02 2 - 16 AS1333 Data Sheet - A b s o l u t e M a x i m u m R a t i n g s 5 Absolute Maximum Ratings Stresses beyond those listed in may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in Electrical Characteristics on page 4 is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 2. Absolute Maximum Ratings Parameter Min Max Units VDD, PVIN to AGND -0.3 +7.0 V PGND to AGND -0.3 +0.3 V EN, FB, NC AGND - 0.3 VDD + 0.3 V SW PGND - 0.3 PVIN + 0.3 V PVIN to VDD -0.3 +0.3 V Operating Temperature Range -40 +85 °C +150 ºC +150 ºC +260 ºC 2 kV 5.5 V 650 mA +125 ºC Junction Temperature (TJ-MAX) Storage Temperature Range -65 Maximum Lead Temperature (Soldering, 10 sec) Notes 7.0V max ESD Rating Human Body Model HBM MIL-Std. 883E 3015.7 methods Operating Ratings Input Voltage Range 2.7 Recommended Load Current Junction Temperature (TJ) Range Ambient Temperature (TA) Range www.austriamicrosystems.com -40 -40 +85 Revision 1.02 ºC In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 125ºC), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (θJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (θJA × PD-MAX). 3 - 16 AS1333 Data Sheet - E l e c t r i c a l C h a r a c t e r i s t i c s 6 Electrical Characteristics TA = TJ = -40ºC to +85ºC; PVIN = VDD = EN = 3.6V, unless otherwise noted. Typ. values are at TA=25°C. Table 3. Electrical Characteristics Symbol Parameter Conditions Min Typ Max Units VFB Feedback Voltage PVIN = 3.6V 3.028 3.09 3.15 V ISHDN Shutdown supply current EN = SW = 0V 0.01 2 µA IQ DC bias current into VDD FB = 0V, No Switching 1 1.4 mA RDSON(P) Pin-Pin Resistance for PFET 140 200 RDSON(N) Pin-Pin Resistance for NFET ILIM,PFET Switch peak current limit FOSC 1 2 ISW = 200mA; TA = +25°C ISW = 200mA ISW = -200mA; TA = +25°C 300 ISW = -200mA Current limit is built-in, fixed, and not adjustable. mΩ 230 415 mΩ 485 935 1100 1200 mA Internal oscillator frequency 1.8 2 2.2 MHz VIH,EN Logic high input threshold 1.2 VIL,EN Logic low input threshold IPIN,ENABLE Pin pull down current V 5 0.5 V 10 µA 1. Shutdown current includes leakage current of PFET. 2. IQ specified here is when the part is operating at 100% duty cycle. System Characteristics TA = 25ºC; PVIN = VDD = EN = 3.6V, unless otherwise noted. The following parameters are verified by characterisation and are not production tested. Table 4. System Characteristics Symbol Parameter Conditions T_ON Turn on time (time for output to reach 3.09V from Enable low to high transition) η VOUT_ripple Ripple voltage, PWM mode Typ Max Units EN = Low to High, VIN = 4.2V, VOUT = 3.09V, COUT = 10µF, IOUT ≤ 1mA 210 350 µs Efficiency (L = 3.3µH, DCR ≤ 100mΩ) VIN = 3.6V, VOUT = 3.09V, IOUT = 400mA 96 % 1 VIN = 4.2V, VOUT = 3.09V, IOUT = 10mA to 400mA 5 mVp-p 50 mVpk 50 mVpk Line_tr Line transient response VIN = 600mV perturbance, over Vin range 3.4V to 5.5V TRISE = TFALL = 10µs, VOUT = 3.09V, IOUT = 100mA Load_tr Load transient response VIN = 4.2V, VOUT = 3.09V, transients up to 100mA, TRISE = TFALL = 10µs Min 1. Ripple voltage should measured at COUT electrode on good layout PC board and under condition using suggested inductors and capacitors. www.austriamicrosystems.com Revision 1.02 4 - 16 AS1333 Data Sheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s 7 Typical Operating Characteristics Circuit in Figure 23 on page 10, PVIN = VDD = EN = 3.6V, L = 3.3µH (LPS4018-332ML_), CIN = COUT = 10µF (GRM21BR61C106KA01) unless otherwise noted; Figure 3. Quiescent Current vs. VIN Figure 4. Shutdown Current vs. Temperature 0.55 0.3 Vi n=3.25V Shutdown Current (µA) Quiescent Current (mA) Vi n=3.6V 0.5 0.45 0.4 0.25 Vi n=4.2V Vi n=5.5V 0.2 0.15 0.1 0.05 - 45°C + 25°C + 85°C 0.35 2.5 3 3.5 4 4.5 5 0 -40 5.5 -15 10 Supply Voltage (V) 60 85 Figure 6. Output Voltage vs. Supply Voltage 4 3.15 3 3.13 2 Output Voltage (V) Switching Frequency Variation (%) Figure 5. Switching Frequency Variation vs. Temp. 1 0 -1 -2 Vi n=3.6V -3 3.11 3.09 3.07 3.05 Vi n=4.2V -15 10 35 60 Iout=650mA 85 3.03 3.25 Temperature (°C) www.austriamicrosystems.com Iout=50mA Iout=300mA Vi n=5.5V -4 -40 35 Temperature (°C) 3.75 4.25 4.75 5.25 Supply Voltage (V) Revision 1.02 5 - 16 AS1333 Data Sheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s Figure 8. Efficiency vs. Output Current 3.15 100 3.13 95 Efficiency (%) Output Voltage (V) Figure 7. Output Voltage vs. Temperature 3.11 3.09 3.07 90 85 80 Vi n=3.25V Vi n=3.6V Vi n=3.9V 3.05 75 Iout=50mA Vi n=4.2V Iout=300mA Vi n=4.5V Iout=650mA 3.03 -40 Vi n=5.5V 70 -15 10 35 60 85 0 Temperature (°C) 100 200 300 400 500 600 700 Output Current (mA) Figure 9. Switch Peak Current Limit vs. Temperature; closed loop Figure 10. Load Transient Response; VOUT = 3.09V, VIN = 4.2V 200mV/Div 1.1 1.05 IOUT Vi n=2.7V Vi n=3.6V Vi n=5.5V 1 -40 -15 10 35 60 85 10µs/Div 100mA 400mA 200mA/Div VOUT 1.15 IL Peak Current Limit (A) 1.2 Temperature (°C) VSW 500mA/DIV VOUT 1V/Div IL EN 2V/Div 500mA/DIV 2V/Div VSW VOUT IL EN 50µs/Div www.austriamicrosystems.com 2V/Div 5V/Div Figure 12. Startup; VIN = 4.2V, VOUT = 3.09V, IOUT<1mA, RLOAD=3.3kΩ 5V/Div Figure 11. Startup; VIN = 3.6V, VOUT = 3.09V, IOUT<1mA, RLOAD=3.3kΩ 50µs/Div Revision 1.02 6 - 16 AS1333 Data Sheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s 50µs/Div 5V/Div 2V/Div 2V/Div 200mA/Div VSW 10mV/Div IL VOUT 100mA/Div 5mV/Div 2V/Div Figure 18. VOUT Ripple in Skip Mode; VIN=3.31V, VOUT=3.09V, RLOAD=5Ω 2V/Div VSW 2A/Div 10µs/Div Figure 17. Output Voltage Ripple; VOUT = 3.09V, IOUT = 200mA IL 2V/Div VSW VOUT IL VOUT 50mV/Div IL 100mA/Div VIN 1V/Div Figure 16. Timed Current Limit Response; VIN = 3.6V 50µs/Div VOUT 2V/Div 50µs/Div Figure 15. Line Transient Response; VIN=3.3V to 3.9V, IOUT=100mA, VOUT=3.09V 200ns/Div www.austriamicrosystems.com 500mA/Div VSW VOUT EN IL EN IL 5V/Div 2V/Div Figure 14. Shutdown Response; VIN=4.2V, VOUT=3.09V, RLOAD=5Ω 2V/Div 500mA/Div VOUT VSW Figure 13. Shutdown Response; VIN=3.6V, VOUT=3.09V, RLOAD=5Ω 1µs/Div Revision 1.02 7 - 16 AS1333 Data Sheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s Figure 20. RDSON (N-Chanel) vs. Temp.; ISW=-200mA 350 350 300 300 250 250 R DSON (m Ω ) R DSON (m Ω ) Figure 19. RDSON (P-Chanel) vs. Temp.; ISW=200mA 200 150 100 200 150 100 Vi n=2.7V 50 Vi n=2.7V 50 Vi n=3.6V Vi n=3.6V Vi n=5.5V 0 -40 -15 10 35 Vi n=5.5V 60 85 0 -40 Temperature (°C) -15 10 35 60 85 Temperature (°C) Figure 21. EN High Threshold vs. VIN 1.2 EN High Threshold (V) 1.15 1.1 1.05 1 0.95 0.9 - 45°C 0.85 + 25°C + 90°C 0.8 2.5 3 3.5 4 4.5 5 5.5 Supply Voltage (V) www.austriamicrosystems.com Revision 1.02 8 - 16 AS1333 Data Sheet - D e t a i l e d D e s c r i p t i o n 8 Detailed Description The AS1333 is a simple, step-down DC-DC converter optimized for powering portable applications that require low dropout voltages such as mobile phones, portable communicators, and similar battery powered RFIC devices. Besides being packed with numerous features like current overload protection, thermal overload shutdown and soft start, AS1333 displays the following characteristics: ! Its operation is based on current-mode buck architecture with synchronous rectification for high efficiency. ! Allows the application to operate at maximum efficiency over a wide range of power levels from a single Li-Ion battery cell. ! Provides for a maximum load capability of 650mA in PWM mode, wherein the maximum load range may vary depending on input voltage, output voltage and the selected inductor. ! Is ranked at an efficiency of around 96% for a 400mA load with a 3.6V input and a fixed output voltage of 3.09V. Figure 22. Functional Block Diagram VDD PVIN Oscillator Current Sense NC PWM COMP Error Amplifier FB Mosfet Control Logic Soft Start SW Main Control EN Shutdown Control AS1333 AGND PGND AS1333 is fabricated using a chip-scale 8-pin WL-CSP package, which requires special design considerations for implementation. Its fine bumppitch requires careful board design and precision assembly equipment. This package offers the smallest possible size, for space-critical applications such as cell phones, where board area is an important design consideration. The size of the external components is reduced by using a high switching frequency (2MHz). Figure 1 on page 1 demonstrates that only three external power components are required for implementation. The WLCSP package is appropriate for opaque case applications, where its edges are not subject to highintensity ambient red or infrared light. Also, the system controller should set EN low during power-up and other low supply voltage conditions. See Shutdown Mode on page 11. www.austriamicrosystems.com Revision 1.02 9 - 16 AS1333 Data Sheet - D e t a i l e d D e s c r i p t i o n Figure 23. Typical Operating System Circuit VIN 3.25V to 5.5V PVIN C1 10 µF VDD L1 3.3 µH NC VOUT 3.09V SW AS1333 FB System Controller C2 EN 10 µF ON/OFF SGND PGND Operating the AS1333 AS1333’s control block turns on the internal PFET (P-channel MOSFET) switch during the first part of each switching cycle, thus allowing current to flow from the input through the inductor to the output filter capacitor and load. The inductor limits the current to a ramp with a slope of around (VIN - VOUT) / L, by storing energy in a magnetic field. During the second part of each cycle, the controller turns the PFET switch off, blocking current flow from the input, and then turns the NFET (N-channel MOSFET) synchronous rectifier on. As a result, the inductor’s magnetic field collapses, generating a voltage that forces current from ground through the synchronous rectifier to the output filter capacitor and load. While the stored energy is transferred back into the circuit and depleted, the inductor current ramps down with a slope around VOUT / L. The output filter capacitor stores charge when the inductor current is high, and releases it when low, smoothing the voltage across the load. The output voltage is regulated by modulating the PFET switch on time to control the average current sent to the load. The effect is identical to sending a duty-cycle modulated rectangular wave formed by the switch and synchronous rectifier at SW to a low-pass filter formed by the inductor and output filter capacitor. The output voltage is equal to the average voltage at the SW pin. While in operation, the output voltage is regulated by switching at a constant frequency and then modulating the energy per cycle to control power to the load. Energy per cycle is set by modulating the PFET switch on-time pulse width to control the peak inductor current. This is done by comparing the signal from the current-sense amplifier with a slope compensated error signal from the voltage-feedback error amplifier. At the beginning of each cycle, the clock turns on the PFET switch, causing the inductor current to ramp up. When the current sense signal ramps past the error amplifier signal, the PWM comparator turns off the PFET switch and turns on the NFET synchronous rectifier, ending the first part of the cycle. If an increase in load pulls the output down, the error amplifier output increases, which allows the inductor current to ramp higher before the comparator turns off the PFET. This increases the average current sent to the output and adjusts for the increase in the load. Before appearing at the PWM comparator, a slope compensation ramp from the oscillator is subtracted from the error signal for stability of the current feedback loop. The minimum on time of PFET in PWM mode is 50ns (typ.) www.austriamicrosystems.com Revision 1.02 10 - 16 AS1333 Data Sheet Internal Synchronous Rectifier To reduce the rectifier forward voltage drop and the associated power loss, the AS1333 uses an internal NFET as a synchronous rectifier. The big advantage of a synchronous rectification is the higher efficiency in a condition where the output voltage is low compared to the voltage drop across an ordinary rectifier diode. During the inductor current down slope in the second part of each cycle the synchronous rectifier is turned on. Before the next cycle the synchronous rectifier is turned off. There is no need for an external diode because the NFET is conducting through its intrinsic body diode during the transient intervals before it turns on. Shutdown Mode If EN is set to high (>1.2V) the AS1333 is in normal operation mode. During power-up and when the power supply is less than 2.7V minimum operating voltage, the chip should be turned off by setting EN low. In shutdown mode the following blocks of the AS1333 are turned off, PFET switch, NFET synchronous rectifier, reference voltage source, control and bias circuitry. The AS1333 is designed for compact portable applications, such as mobile phones where the system controller controls operation mode for maximizing battery life and requirements for small package size outweigh the additional size required for inclusion of UVLO (Under Voltage Lock-Out) circuitry. Note: Setting the EN digital pin low (<0.5V) places the AS1333 in a 0.01µA (typ.) shutdown mode. Thermal Overload Protection To prevent the AS1333 from short-term misuse and overload conditions the chip includes a thermal overload protection. To block the normal operation mode the device is turning the PFET and the NFET off in PWM mode as soon as the junction temperature exceeds 150°C. To resume the normal operation the temperature has to drop below 125°C. Note: Continuing operation in thermal overload conditions may damage the device and is considered bad practice. Current Limiting For Protection If in the PWM mode the cycle-by-cycle current limit of 1200mA (max.) is reached the current limit feature takes place and protect the device and the external components. A timed current limiting mode is working when a load pulls the output voltage down to approximately 0.375V. In this timed current limit mode the inductor current is forced to ramp down to a safe value. This is achived by turning off the internal PFET switch and delaying the start of the next cycle for 3.5us. The synchronous rectifier is also turned off in the timed current limit mode. The advantage of the timed current limit mode is to prevent the device from the loss of the current control. www.austriamicrosystems.com Revision 1.02 11 - 16 AS1333 Data Sheet 9 Application Information Inductor Selection For the external inductor, a 3.3µH inductor is recommended. Minimum inductor size is dependant on the desired efficiency and output current. Inductors with low core losses and small DCR at 2MHz are recommended. Table 5. Recommended Inductor Part Number L DCR LPS4018-222ML_ 2.2µH 0.070Ω Current Rating Dimensions (L/W/T) 2.9A 3.9x3.9x1.7mm LPS4018-332ML_ 3.3µH 0.080Ω 2.4A 3.9x3.9x1.7mm LPS4018-472ML_ 4.7µH 0.125Ω 1.9A 3.9x3.9x1.7mm Manufacturer Coilcraft www.coilcraft.com Capacitor Selection A 10µF capacitor is recommended for CIN as well as a 10µF for COUT. Small-sized X5R or X7R ceramic capacitors are recommended as they retain capacitance over wide ranges of voltages and temperatures. Input and Output Capacitor Selection Low ESR input capacitors reduce input switching noise and reduce the peak current drawn from the battery. Also low ESR capacitors should be used to minimize VOUT ripple. Multi-layer ceramic capacitors are recommended since they have extremely low ESR and are available in small footprints. For input decoupling the ceramic capacitor should be located as close to the device as practical. A 4.7µF input capacitor is sufficient for most applications. Larger values may be used without limitations. A 2.2µF to 10µF output ceramic capacitor is sufficient for most applications. Larger values up to 22µF may be used to obtain extremely low output voltage ripple and improve transient response. Table 6. Recommended Input and Output Capacitor Part Number C TC Code Rated Voltage Dimensions (L/W/T) GRM188R60J475KE19 4.7µF X5R 6.3V 0603 GRM219R60J475KE19 4.7µF X5R 6.3V 0805 GRM21BR61C475KA88 4.7µF X5R 16V 0805 GRM31CR71E475KA88 4.7µF X7R 25V 1206 GRM188R60J106ME47 10µF X5R 6.3V 0603 GRM21BR60J106KE19 10µF X5R 6.3V 0805 GRM21BR61A106KE19 10µF X5R 10V 0805 GRM32DR71C106KA01 10µF X7R 16V 1210 GRM21BR60J226ME39 22µF X5R 6.3V 0805 GRM32ER71A226KE20 22µF X7R 10V 1210 Manufacturer Murata www.murata.com EN Pin Control Drive the EN pin using the system controller to turn the AS1333 ON and OFF. Use a comparator, Schmidt trigger or logic gate to drive the EN pin. Set EN high (>1.2V) for normal operation and low (<0.5V) for a 0.01µA (typ.) shutdown mode. Set EN low to turn off the AS1333 during power-up and under voltage conditions when the power supply is less than the 2.7V minimum operating voltage. The part is out of regulation when the input voltage is less than 2.7V. www.austriamicrosystems.com Revision 1.02 12 - 16 AS1333 Data Sheet - A p p l i c a t i o n I n f o r m a t i o n Layout Considerations The AS1333 converts higher input voltage to lower output voltage with high efficiency. This is achieved with an inductorbased switching topology. During the first half of the switching cycle, the internal PMOS switch turns on, the input voltage is applied to the inductor, and the current flows from PVDD line to the output capacitor (C2) through the inductor. During the second half cycle, the PMOS turns off and the internal NMOS turns on. The inductor current continues to flow via the inductor from the device PGND line to the output capacitor (C2). Referring to Figure 24, the AS1333 has two major current loops where pulse and ripple current flow. The loop shown in the left hand side is most important, because pulse current shown in Figure 24 flows in this path. The right hand side is next. The current waveform in this path is triangular, as shown in Figure 24. Pulse current has many high-frequency components due to fast di/dt. Triangular ripple current also has wide high-frequency components. Board layout and circuit pattern design of these two loops are the key factors for reducing noise radiation and stable operation. Other lines, such as from battery to C1(+) and C2(+) to load, are almost DC current, so it is not necessary to take so much care. Only pattern width (current capability) and DCR drop considerations are needed. Figure 24. Current Loop VIN 3.25V to 5.5V i fOSC = 2MHz + C1 VDD PVIN i L1 - 10 µF 3.3 µH SW EN FB PGND C2 + 10 µF - VOUT 3.09V AGND NC www.austriamicrosystems.com Revision 1.02 13 - 16 AS1333 Data Sheet - P a c k a g e D r a w i n g s a n d M a r k i n g s 10 Package Drawings and Markings The device is available in a 8-pin WL-CSP Figure 25. Package Drawings www.austriamicrosystems.com Revision 1.02 14 - 16 AS1333 Data Sheet - O r d e r i n g I n f o r m a t i o n 11 Ordering Information The device is available as the standard products listed below. Table 7. Ordering Information Part Number AS1333-BWLT Marking ASQX Description 650mA, DC-DC Step-Down for RF Delivery Form Tape and Reel Package 8-pin WL-CSP All devices are RoHS compliant and free of halogene substances. www.austriamicrosystems.com Revision 1.02 15 - 16 AS1333 Data Sheet Copyrights Copyright © 1997-2009, austriamicrosystems AG, Schloss Premstaetten, 8141 Unterpremstaetten, Austria-Europe. Trademarks Registered ®. All rights reserved. The material herein may not be reproduced, adapted, merged, translated, stored, or used without the prior written consent of the copyright owner. All products and companies mentioned are trademarks or registered trademarks of their respective companies. Disclaimer Devices sold by austriamicrosystems AG are covered by the warranty and patent indemnification provisions appearing in its Term of Sale. austriamicrosystems AG makes no warranty, express, statutory, implied, or by description regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. austriamicrosystems AG reserves the right to change specifications and prices at any time and without notice. Therefore, prior to designing this product into a system, it is necessary to check with austriamicrosystems AG for current information. This product is intended for use in normal commercial applications. Applications requiring extended temperature range, unusual environmental requirements, or high reliability applications, such as military, medical life-support or life-sustaining equipment are specifically not recommended without additional processing by austriamicrosystems AG for each application. For shipments of less than 100 parts the manufacturing flow might show deviations from the standard production flow, such as test flow or test location. The information furnished here by austriamicrosystems AG is believed to be correct and accurate. However, austriamicrosystems AG shall not be liable to recipient or any third party for any damages, including but not limited to personal injury, property damage, loss of profits, loss of use, interruption of business or indirect, special, incidental or consequential damages, of any kind, in connection with or arising out of the furnishing, performance or use of the technical data herein. No obligation or liability to recipient or any third party shall arise or flow out of austriamicrosystems AG rendering of technical or other services. Contact Information Headquarters austriamicrosystems AG A-8141 Schloss Premstaetten, Austria Tel: +43 (0) 3136 500 0 Fax: +43 (0) 3136 525 01 For Sales Offices, Distributors and Representatives, please visit: http://www.austriamicrosystems.com/contact-us www.austriamicrosystems.com Revision 1.02 16 - 16