AOT7N60/AOTF7N60 600V, 7A N-Channel MOSFET General Description Features The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS (V) = 700V @ 150°C ID = 7A RDS(ON) < 1.2Ω Top View TO-220 G D G S D 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! TO-220F D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT7N60 AOTF7N60 Symbol VDS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 TC=25°C Continuous Drain Current (VGS = 10V) TC=100°C ID 7 7* 4.4 4.4* Units V V A C IDM Avalanche Current C, G IAR 3 A Repetitive avalanche energy C, G EAR 135 mJ Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C B Power Dissipation Derate above 25oC EAS dv/dt 270 5 mJ V/ns W Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter TJ, TSTG Pulsed Drain Current PD Alpha & Omega Semiconductor, Ltd. A,D 176 38.5 1.4 0.3 -50 to 150 W/ oC °C 300 °C TL Symbol RθJA A R θCS Maximum Case-to-Sink RθJC Maximum Junction-to-Case * Drain current limited by maximum junction temperature. Maximum Junction-to-Ambient 28 AOT7N60 65 AOTF7N60 65 Units 0.5 -3.25 °C/W °C/W 0.71 °C/W www.aosmd.com AOT7N60 / AOTF7N60 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Conditions Min ID=250μA, VGS=0V, TJ=25°C 600 Typ Max Units V BVDSS Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature /∆TJ Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 3.9 5 V RDS(ON) gFS Static Drain-Source On-Resistance VGS=10V, ID=3.5A 1 1.2 Forward Transconductance VDS=40V, ID=3.5A 12 Ω S VSD Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current 1 V IS ISM Maximum Body-Diode Pulsed Current ID=250μA, VGS=0V, TJ=150°C ID=250μA, VGS=0V Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 1 10 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=480V, ID=7A μA ±100 3 0.74 685 VGS=0V, VDS=25V, f=1MHz nA 7 A 28 A 861 1035 pF 65 84 100 pF 5.2 6.6 7.9 pF 3 4.1 6.2 Ω 19.3 23.2 27.8 nC 3.8 4.6 5.5 nC 9.3 11.2 13.5 nC VGS=10V, VDS=300V, ID=7A, RG=25Ω Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=7A,dI/dt=100A/μs,VDS=100V Qrr o V/ C 0.72 VDS=480V, TJ=125°C IF=7A,dI/dt=100A/μs,VDS=100V trr V VDS=600V, VGS=0V DYNAMIC PARAMETERS Ciss Input Capacitance Coss 700 25 ns 49.5 ns 51.5 ns 43.5 ns 212 255 306 2 2.6 3.1 ns μC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=3A, VDD=50V, RG=25Ω, Starting TJ=25°C Rev 0. Sep-08 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT7N60 / AOTF7N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 100 10V 6.5V 10 9 6V 125°C ID(A) ID (A) -55°C VDS=40V 12 6 1 3 25°C VGS=5.5V 0.1 0 0 5 10 15 20 25 30 2 VDS (Volts) Fig 1: On-Region Characteristics 6 8 200 16 3 Normalized On-Resistance 2.0 1.8 10 VGS(Volts) Figure 2: Transfer Characteristics 2.2 RDS(ON) (mΩ) 4 VGS=10V 1.6 1.4 1.2 1.0 2.5 VGS=10V ID=3.5A 2 1.5 1 0.5 0.8 0 2 4 6 8 10 12 14 0 -100 16 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 1.2 50 100 150 200 1.0E+02 1.0E+01 1.1 125°C 1.0E+00 IS (A) BVDSS (Normalized) 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1 1.0E-01 25°C 1.0E-02 1.0E-03 0.9 1.0E-04 0.8 -100 1.0E-05 -50 0 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOT7N60 / AOTF7N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VDS=480V ID=7A Ciss Capacitance (pF) VGS (Volts) 12 9 6 1000 Coss 100 10 3 Crss 0 1 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 35 100 0.1 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 200 16 100 10μs 10μs 10 RDS(ON) limited 100μs 1ms 10ms 0.1s DC 1 0.1 ID (Amps) ID (Amps) 10 100 RDS(ON) limited 100μs 1 DC 0.1 TJ(Max)=150°C TC=25°C 1ms 10ms 0.1s 1s 10s TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 1000 VDS (Volts) 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT12N60 (Note F) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF12N60 (Note F) 8 Current rating ID(A) 7 6 5 4 3 2 1 0 0 25 50 75 100 125 150 TCASE (°C) Figure 11: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT7N60 / AOTF7N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=0.71°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT7N60 (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 200 16 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=3.25°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF7N60 (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT7N60 / AOTF7N60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs Rg + VDC 90% Vdd - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC Rg - Vdd I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Qrr = - Idt Vds + DUT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com