AP9971GD
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D2
D2
D1
▼ Fast Switching Speed
D1
BVDSS
60V
RDS(ON)
50mΩ
ID
▼ PDIP-8 Package
5A
G2
S2
PDIP-8
G1
S1
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D2
D1
G2
G1
S1
S2
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+25
V
ID@TA=25℃
Continuous Drain Current3, VGS @ 10V
5
A
3.2
A
ID@TA=70℃
3
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
20
A
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
200809223
AP9971GD
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
60
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.06
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=5A
-
-
50
mΩ
VGS=4.5V, ID=2.5A
-
-
60
mΩ
VGS=0V, ID=250uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
7
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=48V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+25V
-
-
+100
nA
ID=5A
-
32.5
-
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
4.9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
8.8
-
nC
VDS=30V
-
9.6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=5A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
30
-
ns
tf
Fall Time
RD=6Ω
-
5.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
1560
-
pF
Coss
Output Capacitance
VDS=25V
-
156
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.6A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
29.2
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
48
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3. Mounted on 1 in2 copper pad of FR4 board ;90℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9971GD
35
35
o
T A =25 C
25
T A =150 C
30
ID , Drain Current (A)
ID , Drain Current (A)
o
10V
6.0V
4.5V
30
20
15
10
25
20
15
V G =3.0V
10
V G =3.0V
5
5
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
52
2.0
I D =5A
I D =5A
o
T A =25 C
V G =10V
1.6
Normalized RDS(ON)
48
RDS(ON) (m Ω)
10V
6.0V
4.5V
44
40
36
1.2
0.8
0.4
32
0.0
3
5
7
9
-50
11
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
2.4
2
T j =150 o C
VGS(th) (V)
IS (A)
10
T j =25 o C
1
1.6
1.2
0.1
0.8
0.4
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9971GD
14
f=1.0MHz
10000
I D =5A
V DS =48V
V DS =38V
V DS =30V
10
C iss
1000
C (pF)
VGS , Gate to Source Voltage (V)
12
8
6
C oss
C rss
100
4
2
10
0
0
5
10
15
20
25
30
35
1
40
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty foctor=0.5
10
ID (A)
1ms
1
10ms
100ms
0.1
1s
o
T A =25 C
Single Pulse
DC
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
Single Pulse
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=90℃/W
0.001
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : PDIP-8
Millimeters
SYMBOLS
E
A
A2
A1
B2
D
L
B1
B
e
MIN
NOM
MAX
A
3.60
4.50
5.40
A1
0.38
----
----
A2
B
B1
B2
C
D
2.90
3.95
5.00
0.36
0.46
0.56
1.10
1.45
1.80
0.76
0.98
1.20
0.20
0.28
0.36
9.00
9.60
10.20
E
6.10
6.65
7.20
E1
7.62
7.94
8.26
E2
8.30
9.65
11.00
2.540 BSC
e
E1
L
C
3.18
----
----
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
E2
Part Marking Information & Packing : PDIP-8
9971GD
YWWSSS
Part Number
Package Code
meet Rohs requirement
for low voltage MOSFET only
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5