AP40P03GI
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
-30V
RDS(ON)
28mΩ
ID
G
▼ RoHS Compliant
BVDSS
-30A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The TO-220CFM isolation package is widely preferred for all
commercial-industrial through hole applications.
D
TO-220CFM(I)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-30
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-18
A
1
IDM
Pulsed Drain Current
-120
A
PD@TC=25℃
Total Power Dissipation
31.3
W
Linear Derating Factor
0.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
1
200812303
AP40P03GI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
-
-0.02
-
V/℃
VGS=-10V, ID=-18A
-
-
28
mΩ
VGS=-4.5V, ID=-10A
-
-
50
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-18A
-
21
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (T j=125 C) VDS=-24V, VGS=0V
-
-
-250
uA
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=-18A
-
15
24
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-25V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
10
-
nC
VDS=-15V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-18A
-
48
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
31
-
ns
tf
Fall Time
RD=0.8Ω
-
66
-
ns
Ciss
Input Capacitance
VGS=0V
-
910
1460
pF
Coss
Output Capacitance
VDS=-25V
-
300
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
210
-
pF
Rg
Gate Resistance
f=1.0MHz
-
11
17
Ω
Min.
Typ.
IS=-18A, VGS=0V
-
-
-1.3
V
IS=-18A, VGS=0V,
-
30
-
ns
dI/dt=-100A/µs
-
25
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP40P03GI
100
120
-10V
o
T A = 25 C
-7.0V
80
60
-5.0V
-4.5V
40
-7.0V
80
-ID , Drain Current (A)
-ID , Drain Current (A)
100
-10V
TA=150oC
60
-5.0V
40
-4.5V
V G = -3.0 V
20
20
V G = -3.0 V
0
0
0
2
4
6
8
0
4
6
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
58
I D = -10 A
T C =25 ℃
I D =- 18 A
V G =-10V
1.4
Normalized RDS(ON)
48
RDS(ON) (mΩ )
2
-V DS , Drain-to-Source Voltage (V)
38
1.2
1.0
28
0.8
0.6
18
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
18
Normalized -VGS(th) (V)
15
-IS(A)
12
o
o
T j =150 C
9
T j =25 C
6
1.2
1.0
0.8
0.6
3
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP40P03GI
f=1.0MHz
10000
V DS =- 25 V
I D =-1 8 A
9
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
1000
C iss
3
C oss
C rss
100
0
0
5
10
15
20
25
1
30
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
-ID (A)
100
100us
10
1ms
10ms
100ms
1s
DC
T c =25 o C
Single Pulse
1
0.1
1
10
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220CFM
E
A
Millimeters
SYMBOLS
c2
φ
L4
MIN
NOM
MAX
A
4.30
4.70
4.90
A1
2.30
2.65
3.00
b
b1
c
c2
0.50
0.70
0.90
0.95
1.20
1.50
0.45
0.65
0.80
2.30
2.60
2.90
E
9.70
10.00
10.40
L
12.00
---
15.00
L3
2.91
3.41
3.91
L4
14.70
15.40
16.10
φ
e
----
3.20
----
----
2.54
----
L3
A1
b1
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
L
b
c
e
Part Marking Information & Packing : TO-220CFM
LOGO
Part Number
40P03GI
YWWSSS
Package Code
Meet Rohs requirement
for low voltage MOSFET only
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5