AP9985GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-Resistance
D
D
▼ Fast Switching Speed
D
D
BVDSS
40V
RDS(ON)
15mΩ
ID
▼ Surface Mount Package
SO-8
S
S
S
10A
G
Description
D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
40
V
± 20
V
Continuous Drain Current
3
10
A
Continuous Drain Current
3
8
A
48
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
50
℃/W
1
200811132
AP9985GM
Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
40
-
-
V
-
0.032
-
V/℃
VGS=10V, ID=10A
-
-
15
mΩ
VGS=4.5V, ID=5A
-
-
25
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=10A
-
35
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC) VDS=32V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=10A
-
14.7
-
nC
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
7.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6.8
-
nC
VDS=20V
-
11.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
6.3
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
28.2
-
ns
tf
Fall Time
RD=20Ω
-
12.6
-
ns
Ciss
Input Capacitance
VGS=0V
-
1725
-
pF
Coss
Output Capacitance
VDS=25V
-
235
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
145
-
pF
Min.
Typ.
VD=VG=0V , VS=1.3V
-
-
1.92
A
Tj=25℃, IS=2.3A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
Forward On Voltage
2
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9985GM
50
50
T A =25 o C
40
ID , Drain Current (A)
ID , Drain Current (A)
40
30
V G = 4.0 V
20
10V
6.0V
5.0V
4.5V
o
T A = 150 C
10V
6.0V
5.0V
4.5V
10
30
V G = 4 .0 V
20
10
0
0
0
1
2
3
4
0
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
70
I D =10A
V G =10V
I D =10A
T A =25 ℃
60
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
50
40
30
1.2
0.8
20
10
0.4
2
4
6
8
10
-50
0
V GS , Gate-to-Source Voltage (V)
150
T j , Junction Temperature ( C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
2.8
8
2.4
VGS(th) (V)
IS(A)
100
o
Fig 3. On-Resistance v.s. Gate Voltage
6
T j =150 o C
50
T j =25 o C
2.0
4
1.6
2
1.2
0.8
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
-25
0
25
50
75
100
125
150
T j , Junction Temperature (oC)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9985GM
f=1.0MHz
2400
12
2000
V DS =12V
V DS =16V
V DS =20V
8
C iss
1600
C (pF)
VGS , Gate to Source Voltage (V)
I D =10A
10
6
1200
4
800
2
400
C oss
C rss
0
0
0
4
8
12
16
20
1
24
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
100us
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
0.01
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthia=125 ℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
Millimeters
8
7
6
5
E1
1
2
3
4
e
B
E
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
c
0.19
0.22
0.25
D
4.80
4.90
5.00
E
5.80
6.15
6.50
E1
3.80
3.90
4.00
e
1.27 TYP
G
0.254 TYP
L
0.38
－
0.90
α
0.00
4.00
8.00
A
A1
G
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
Part Number
Package Code
meet Rohs requirement
9985GM
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5