AP9936GM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ DC-DC Application ▼ Dual N-channel Device D2 D1 D2 D1 G2 S2 SO-8 S1 30V RDS(ON) 50mΩ ID ▼ Surface Mount Package ▼ RoHS Compliant BVDSS 5A G1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 30 V +20 V Continuous Drain Current 3 5 A Continuous Drain Current 3 4 A 20 A 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 2 W Linear Derating Factor 0.016 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 62.5 ℃/W 1 200901203 AP9936GM-HF Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. 30 - - V VGS=10V, ID=5A - - 50 mΩ VGS=4.5V, ID=3.9A - - 80 mΩ VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=15V, ID=5A - 6 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=5A - 6.1 - nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=15V - 1.4 - nC Qgd Gate-Drain ("Miller") Charge VGS=5V - 3.3 - nC VDS=15V - 6.7 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1.5A - 6.4 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 22.1 - ns tf Fall Time RD=10Ω - 2.1 - ns Ciss Input Capacitance VGS=0V - 240 - pF Coss Output Capacitance VDS=25V - 145 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 55 - pF Min. Typ. VD=VG=0V , VS=1.2V - - 1.67 A Tj=25℃, IS=1.7A, VGS=0V - - 1.2 V Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Forward On Voltage 2 Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9936GM-HF 40 50 10V 8.0V 8.0V ID , Drain Current (A) ID , Drain Current (A) 40 10V T A =150 o C T A =25 o C 5.0V 30 20 4.0V 30 6.0V 20 4.0V 10 V GS =3.0V 10 V GS =3.0V 0 0 0 2 4 0 6 V DS , Drain-to-Source Voltage (V) 2 4 6 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 120 I D =5A V GS =10V I D =5A T A =25 ℃ 1.6 Normalized RDS(ON) RDS(ON) (mΩ ) 100 80 60 1.4 1.2 1 40 0.8 0.6 20 2 4 6 8 10 -50 12 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 2.5 2 o o Tj=25 C VGS(th) (V) IS(A) Tj=150 C 1 1.5 1 0.1 0.5 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 T j , Junction Temperature ( 100 o 150 C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9936GM-HF f=1.0MHz 1000 10 Ciss C (pF) VGS , Gate to Source Voltage (V) 12 8 Coss 100 6 Crss 4 2 10 0 0 2 4 6 8 10 1 12 8 Q G , Total Gate Charge (nC) 15 22 29 V DS , Drain-to-Source Voltage (V) Fig7. Gate Charge Characteristics Fig 8 . Typical Capacitance Characteristics 1 100 ID (A) 10 1ms 1 10ms 100ms 0.1 1s T A =25 o C Single Pulse DC 0.01 Normalized Thermal Response (Rthja) Duty Factor = 0.5 0.2 0.1 0.1 0.05 0.02 PDM t 0.01 T Duty Factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse 0.01 Rthja=135oC/W 0.001 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 90% td(on) 0.1 1 10 100 1000 t , Pulse Width (s) Fig10. Effective Transient Thermal Impedance VG QG 5V QGS QGD 10% VGS tr td(off) t f Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D Millimeters 8 7 6 5 E1 1 2 3 4 e B E SYMBOLS MIN NOM MAX A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 c 0.19 0.22 0.25 D 4.80 4.90 5.00 E 5.80 6.15 6.50 E1 3.80 3.90 4.00 e 1.27 TYP G 0.254 TYP L 0.38 - 0.90 α 0.00 4.00 8.00 A A1 G 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement 9936GM YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence If last "S" is numerical letter : Rohs product If last "S" is English letter : HF & Rohs product 5