IRF840I
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Ease of Paralleling
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
BVDSS
500V
RDS(ON)
0.85Ω
ID
G
8A
S
Description
APEC MOSFET provide the power designer with the best combination
of fast switching , lower on-resistance and reasonable
G
D
TO-220CFM(I)
S
The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
8
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
5.1
A
32
A
35
W
320
mJ
8
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Unit
3.6
℃/W
65
℃/W
201024071-1/4
IRF840I
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Min.
Typ.
VGS=0V, ID=1mA
500
-
-
V
VGS=10V, ID=4.8A
-
-
0.85
Ω
VDS=VGS, ID=250uA
2
-
4
V
VDS=10V, ID=4.8A
-
4.2
-
S
VDS=500V, VGS=0V
-
-
25
uA
Drain-Source Leakage Current (Tj=125 C)
VDS=400V, VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=8A
-
45
72
nC
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
o
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
3
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=400V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
25
-
nC
3
td(on)
Turn-on Delay Time
VDD=250V
-
12
-
ns
tr
Rise Time
ID=8A
-
31
-
ns
td(off)
Turn-off Delay Time
RG=9.1Ω,VGS=10V
-
48
-
ns
tf
Fall Time
RD=31Ω
-
33
-
ns
Ciss
Input Capacitance
VGS=0V
-
1250 2000
pF
Coss
Output Capacitance
VDS=25V
-
270
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
2.4
Ω
Min.
Typ.
Max. Units
Tj=25℃, IS=8A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
3
3
Test Conditions
trr
Reverse Recovery Time
IS=8A, VGS=0V,
-
515
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
8.6
-
uC
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
IRF840I
16
8
10V
7.0V
ID , Drain Current (A)
12
6.0V
8
10V
7 .0V
6 .0V
T C =150 o C
ID , Drain Current (A)
o
T C =25 C
6
5 .0 V
4
V G = 4. 5 V
2
4
5.0V
V G =4.5V
0
0
0
4
8
12
16
20
0
24
V DS , Drain-to-Source Voltage (V)
4
8
12
16
20
24
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
1.1
Normalized RDS(ON)
Normalized BVDSS (V)
I D =4.8A
V G =10V
1
2
1
0.9
0
0.8
-50
0
50
100
-50
150
o
T j , Junction Temperature ( C)
0
50
100
150
T j , Junction Temperature ( o C )
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.4
8
1.2
T j = 150 o C
Normalized VGS(th) (V)
10
T j = 25 o C
IS (A)
6
4
1
0.8
0.6
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
IRF840I
f=1.0MHz
10000
12
I D =8A
V DS =100V
V DS =250V
V DS =400V
8
C iss
1000
C (pF)
VGS , Gate to Source Voltage (V)
10
6
4
C oss
C rss
100
2
0
10
0
10
20
30
40
50
60
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
100us
1ms
10ms
1
100m
1s
o
0.1
T c =25 C
Single Pulse
DC
Normalized Thermal Response (Rthjc)
1
10
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
Single Pulse
0.01
0.01
1
10
100
1000
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220CFM
E
A
Millimeters
SYMBOLS
c2
φ
L4
MIN
NOM
MAX
A
4.50
4.70
4.90
A1
2.30
2.65
3.00
b
b1
c
c2
0.50
0.70
0.90
0.95
1.20
1.50
0.45
0.65
0.80
2.30
2.60
2.90
E
9.70
10.00 10.40
L3
2.91
3.41
L4
14.70 15.40 16.10
φ
e
L3
b1
A1
b
c
----
3.20
----
----
2.54
----
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220CFM
r
Part Number
LOGO
IRF840I
YWWSSS
3.91
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence