SY3517-E / SY3517-E(B) Semiconductor LED Lamp Features • Yellow colored diffusion transparency lens type • φ3mm(T-1) all plastic mold type • Low power consumption Outline Dimensions unit : mm STRAIGHT TYPE STOPPER TYPE 3.0±0.2 3.0±0.2 5.3±0.2 5.3±0.2 2.9±0.2 2.9±0.2 5.2±0.5 0.4 23.0MIN 0.4 23.0MIN 1.0MIN 1.0MIN 2.54 NOM 2.54 NOM 1 2 3.6±0.2 1 2 3.8±0.2 3.8±0.2 KLY-3000-000 3.6±0.2 PIN Connections 1.Anode 2.Cathode 1 SY3517-E / SY3517-E(B) Absolute maximum ratings Characteristic Symbol Ratings Unit Power Dissipation PD 85 mW Forward Current IF 30 mA IFP 50 mA Reverse Voltage VR 4 V Operating Temperature Topr -25∼85 ℃ Storage Temperature Tstg -30∼100 ℃ 1 * Peak Forward Current 2 260℃ for 5 seconds * Soldering Temperature Tsol *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of LED package Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward Voltage VF IF= 20mA - 2.0 2.7 V Luminous Intensity IV IF= 20mA 155 338 520 mcd Peak Wavelength λP IF= 20mA - 585 - nm Δλ IF= 20mA - 30 - nm IR VR=4V - - 10 uA θ1/2 IF= 20mA - ±25 - deg Spectrum Bandwidth Reverse Current 3 * Half angle *3. Luminous Intensity Maximum tolerance for each Grade Classification limit is ±18% *3. Luminous Intensity classification M N O 155~230 230~350 350~520 *4. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity KLY-3000-000 2 SY3517-E / SY3517-E(B) Characteristic Diagrams Fig. 2 IV - IF Forward Current IF [mA] Luminous Intensity Iv [mcd] Fig. 1 IF - VF Forward Voltage VF [V] Forward Current IF [mA] Fig.4 Spectrum Distribution Forward Relative Intensity [%] Current IF [mA] Fig. 3 IF – Ta Ambient Temperature Ta [℃] Wavelength λ [nm] Fig. 5 Radiation Diagram Relative Luminous Intensity Iv [%] KLY-3000-000 3