SRAM MT5C2568 AS5C2568 Austin Semiconductor, Inc. 32K x 8 SRAM PIN ASSIGNMENT (Top View) SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS 28-PIN SOJ (DCJ) 28-Pin DIP (C, CW) FEATURES Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns Battery Backup: 2V data retention Low power standby High-performance, low-power CMOS double-metal process Single +5V (+10%) Power Supply Easy memory expansion with CE\ All inputs and outputs are TTL compatible VCC WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4 A7 A12 A14 NC VCC WE\ A13 28 27 26 25 24 23 22 21 20 19 18 17 16 15 4 3 2 1 32 31 30 A6 A5 A4 A3 A2 A1 A0 NC DQ1 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 A8 A9 A11 NC OE\ A10 CE\ DQ8 DQ7 14 15 16 17 18 19 20 28-Pin LCC (EC) A7 A12 A14 VCC WE\ • • • • • • • 1 2 3 4 5 6 7 8 9 10 11 12 13 14 DQ2 DQ3 VSS NC DQ4 DQ5 DQ6 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS •SMD 5962-88662 •SMD 5962-88552 •MIL-STD-883 32-Pin LCC (ECW) MARKING • Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2 70ns access2 100ns access -12 -15 -20 -25 -35 -45 -55 -70 -100 • Package(s)3 Ceramic DIP (300 mil) Ceramic DIP (600 mil) Ceramic LCC (28 leads) Ceramic LCC (32 leads) Ceramic Flat Pack Ceramic SOJ C CW EC ECW F DCJ • Operating Temperature Ranges Military -55oC to +125oC Industrial -40oC to +85oC XT IT • 2V data retention/low power L 28-Pin Flat Pack (F) A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 4 5 6 7 8 9 10 11 12 26 25 24 23 22 21 20 19 18 A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 13 14 15 16 17 GENERAL DESCRIPTION No. 108 No. 110 No. 204 No. 208 No. 302 No. 500 The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE\) and output enable (OE\) capability. These enhancements can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. The “L” version provides a battery backup/low voltage data retention mode, offering 2mW maximum power dissipation at 2 volts. All devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible. NOTES: 1. -12 available in IT only. 2. Electrical characteristics identical to those provided for the 45ns access devices. 3. Plastic SOJ (DJ Package) is available on the AS5C2568 datasheet. For more products and information please visit our web site at www.austinsemiconductor.com MT5C2568 / AS5C2568 Rev. 4.5 06/05 1 2 3 4 5 6 7 8 9 10 11 12 13 14 3 2 1 28 27 DQ3 VSS DQ4 DQ5 DQ6 OPTIONS Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 SRAM MT5C2568 AS5C2568 Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM A0 Vcc 256 x 1024 MEMORY ARRAY DECODER GND A14 I/O0 I/O DATA CIRCUIT COLUMN I/O I/O7 9A128-1 CE\ CONTROL CIRCUIT OE\ WE\ TRUTH TABLE MODE STANDBY READ READ WRITE MT5C2568 / AS5C2568 Rev. 4.5 06/05 OE\ X L H X CE\ H L L L WE\ X H H L DQ HIGH-Z Q HIGH-Z D POWER STANDBY ACTIVE ACTIVE ACTIVE Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 SRAM MT5C2568 AS5C2568 Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* Voltage on Any Input or DQ Relative to Vss..................................................................-0.5V to Vcc +0.5V Voltage on Vcc Supply Relative to Vss.......................-1V to +7V Storage Temperature..............................................-65oC to +150oC Power Dissipation.......................................................................1W Short Circuit Output Current.................................................50mA Lead Temperature (soldering 10 seconds)........................+260oC Max. Junction Temperature.................................................+175oC *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TC < 125oC or -40oC to +85oC; VCC = 5.0V +10%) DESCRIPTION Input High (Logic 1) Voltage CONDITIONS SYM MIN MAX UNITS NOTES V 1 VIH 2.2 VCC+0.5 VIL -0.5 0.8 V 0V<VIN<VCC ILI -10 10 µA Output(s) disabled 0V<VOUT<VCC ILo -10 10 µA Output High Voltage IOH = -4.0mA VOH 2.4 Output Low Voltage IOL = 8.0mA VOL Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current CONDITIONS DESCRIPTION SYM -12 -15 0.4 MAX -20 -25 -35 1,2 V 1 V 1 -45 UNITS NOTES CE\<VIL; Vcc = MAX Power Supply Current: Operating t Icc 190 180 170 160 150 150 mA CE\<VIH; Outputs Open Vcc = MAX ISBT 60 50 40 35 35 35 mA CE\>Vcc-0.2V; Vcc = MAX VIN<+0.2V or >Vcc-0.2V; f = 0 Hz, Outputs Open ISBC 20 20 20 20 20 20 mA ISBC2 4 4 4 4 4 4 mA f = MAX = 1/ RC (MIN) Output Open TTL Power Supply Current: Standby CMOS "L" Version Only 3 CAPACITANCE PARAMETER Input Capacitance Output Capacitance MT5C2568 / AS5C2568 Rev. 4.5 06/05 CONDITIONS o TA = 25 C, f = 1MHz Vcc = 5V SYM MAX UNITS NOTES CIN 11 pF 4 CIO 11 pF 4 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 SRAM MT5C2568 AS5C2568 Austin Semiconductor, Inc. ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Note 5) (-55oC < TC < 125oC or -40oC to +85oC; VCC = 5.0V +10%) DESCRIPTION SYM -12 -15 -20 MIN MAX MIN MAX MIN MAX READ CYCLE READ cycle time tRC Address access time tAA Chip enable access time tACE Output hold from address change tOH 2 Chip enable to output in Low-Z tLZCE 2 Chip disable to output in High-Z tHZCE Output enable to access time tAOE Output enable to output in Low-Z tLZOE 12 15 12 20 15 12 6 0 8 0 7 10 10 20 20 2 15 20 0 35 ns ns ns 3 35 15 0 45 3 3 UNITS NOTES ns 45 35 15 10 0 45 3 3 -45 MIN MAX 35 25 10 -35 MAX 35 3 3 10 MIN 25 20 3 3 7 -25 MAX 25 20 15 3 MIN ns 7 ns 6, 7 ns ns 20 ns Output disable to output in High-Z tHZOE WRITE CYCLE WRITE cycle time tWC 12 15 20 25 35 45 ns Chip enable to end of write tCW 10 12 15 20 30 40 ns Address valid to end of write tAW 10 12 15 20 30 40 ns Address setup time tAS 0 0 0 0 0 0 ns Address hold from end of write tAH 2 0 0 0 0 0 ns WRITE pulse width tWP 10 12 15 20 30 40 ns Data setup time tDS 8 10 10 15 20 20 ns tDH 0 0 0 0 0 3 ns tLZWE 0 0 0 3 3 3 Data hold time Write disable to output in Low-Z Write enable to output in High-Z MT5C2568 / AS5C2568 Rev. 4.5 06/05 tHZWE 7 10 10 15 35 20 6 ns 7 ns 6, 7 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 SRAM MT5C2568 AS5C2568 Austin Semiconductor, Inc. +5V AC TEST CONDITIONS Input pulse levels....................................................Vss to 3V Input rise and fall times.....................................................5ns Input timing reference level.............................................1.5V Output reference level......................................................1.5V Output load.................................................See figures 1 & 2 480 4. 5. 6. 480 Q 30 pF 255 Q All voltages referenced to VSS (GND). -3V for pulse width < 20ns ICC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f= 1 Hz. t RC (MIN) This parameter is guaranteed but not tested. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. t HZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured ±500mV typical from steady state voltage, allowing for actual tester RC time constant. 5 pF 255 Fig. 2 OUTPUT LOAD EQUIVALENT Fig. 1 OUTPUT LOAD EQUIVALENT NOTES 1. 2. 3. +5V At any given temperature and voltage condition, tHZCE is less than tLZCE, and tHZWE is less than tLZWE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip enables and output enables are held in their active state. 10. Address valid prior to, or coincident with, latest occurring chip enable. 11. tRC = Read Cycle Time. 12. Chip enable (CE\) and write enable (WE\) can initiate and terminate a WRITE cycle. 7. DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only) DESCRIPTION CONDITIONS VCC for Retention Data SYM MIN VDR 2 MAX UNITS NOTES V CE\ > (VCC-0.2V) Data Retention Current VIN > (VCC-0.2V) or < 0.2V Chip Deselect to Data Retention Time Operation Recovery Time ICCDR tCDR 0 tR tRC 1 mA -- ns 4 ns 4, 11 LOW Vcc DATA RETENTION WAVEFORM DATA RETENTION MODE VCC 4.5V VDR > 2V t t CDR CE\ VIH VIL 123 12345678 12 12345678 12 123 12345678 12 123 12345678 12 123 4.5V R V DR 12345678 1234 123 12345678 1234 123 12345678 1234 123 12345678 1234 123 123 123 123 123 DON’T CARE 1234 1234 1234 1234UNDEFINED MT5C2568 / AS5C2568 Rev. 4.5 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 SRAM MT5C2568 AS5C2568 Austin Semiconductor, Inc. READ CYCLE NO. 1 8, 9 tRC ADDRESS VALID tAA tOH DQ PREVIOUS DATA VALID DATA VALID READ CYCLE NO. 2 7, 8, 10, 12 tRC CE\ tAOE tHZOE tLZOE OE\ tLZCE tACE tHZCE DQ DATA VALID tPU tPD Icc MT5C2568 / AS5C2568 Rev. 4.5 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 6 SRAM MT5C2568 AS5C2568 Austin Semiconductor, Inc. WRITE CYCLE NO. 1 12 (Chip Enabled Controlled) tWC ADDRESS tAW tAH tAS tCW CE\ tWP1 WE\ tDS D tDH DATA VAILD Q HIGH Z WRITE CYCLE NO. 2 7, 12 (Write Enabled Controlled) tWC ADDRESS tAW tAH tCW CE\ tAS tWP1 WE\ tDH D DATA VALID Q HIGH-Z NOTE: Output enable (OE\) is inactive (HIGH). MT5C2568 / AS5C2568 Rev. 4.5 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7 SRAM MT5C2568 AS5C2568 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #108 (Package Designator C) SMD 5962-88662, Case Outline N D S2 A Q L E S1 b2 e b eA c SMD SPECIFICATIONS MIN MAX SYMBOL A --0.225 b 0.014 0.026 b2 0.045 0.065 c 0.008 0.018 D --1.485 E 0.240 0.310 eA 0.300 BSC e 0.100 BSC L 0.125 0.200 Q 0.015 0.070 S1 0.005 --S2 0.005 --NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C2568 / AS5C2568 Rev. 4.5 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 8 SRAM MT5C2568 AS5C2568 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #110 (Package Designator CW) SMD 5962-88662, Case Outline X D S2 A Q L E S1 b2 e b eA c SYMBOL A b b2 c D E eA e L Q S1 S2 SMD SPECIFICATIONS MIN MAX --0.232 0.014 0.026 0.045 0.065 0.008 0.018 --1.490 0.500 0.610 0.600 BSC 0.100 BSC 0.125 0.200 0.015 0.060 0.005 --0.005 --- NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C2568 / AS5C2568 Rev. 4.5 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 SRAM MT5C2568 AS5C2568 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #204 (Package Designator EC) SMD 5962-88662, Case Outline U D1 B2 D2 L1 E3 E e E1 E2 D hx45 o L B1 D3 A A1 SYMBOL A A1 B1 B2 D D1 D2 D3 E E1 E2 E3 e h L L1 SMD SPECIFICATIONS MIN MAX 0.060 0.120 0.050 0.088 0.022 0.028 0.072 REF 0.342 0.358 0.200 BSC 0.100 BSC --0.358 0.540 0.560 0.400 BSC 0.200 BSC --0.558 0.050 BSC 0.040 REF 0.045 0.055 0.075 0.095 NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C2568 / AS5C2568 Rev. 4.5 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 10 SRAM MT5C2568 AS5C2568 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #208 (Package Designator ECW) SMD 5962-88662, Case Outline Y D1 B2 D2 L1 E3 E e E1 E2 D hx45o L B1 D3 A A1 SYMBOL A A1 B1 B2 D D1 D2 D3 E E1 E2 E3 e h L L1 SMD SPECIFICATIONS MIN MAX 0.060 0.120 0.050 0.088 0.022 0.028 0.072 REF 0.442 0.458 0.300 BSC 0.150 BSC --0.458 0.540 0.560 0.400 BSC 0.200 BSC --0.558 0.050 BSC 0.040 REF 0.045 0.055 0.075 0.095 NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C2568 / AS5C2568 Rev. 4.5 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 11 SRAM MT5C2568 AS5C2568 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #302 (Package Designator F) SMD 5962-88662, Case Outline T e b D S Top View E L A c Q E2 E3 SYMBOL A b c D E E2 E3 e L Q S SMD SPECIFICATIONS MIN MAX 0.090 0.130 0.015 0.019 0.004 0.009 --0.740 0.380 0.420 0.180 --0.030 --0.050 BSC 0.250 0.370 0.026 0.045 0.000 0.045 NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C2568 / AS5C2568 Rev. 4.5 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 12 SRAM Austin Semiconductor, Inc. MT5C2568 AS5C2568 MECHANICAL DEFINITIONS* ASI Case #500 (Package Designator DCJ) A D e A3 B1 E1 b E A2 SYMBOL A A2 A3 B1 b D E E1 e ASI SPECIFICATIONS MIN MAX 0.116 0.166 0.026 0.036 --0.166 0.030 0.040 0.015 0.019 --0.740 0.380 0.420 0.395 0.410 0.050 BSC * All measurements are in inches. MT5C2568 / AS5C2568 Rev. 4.5 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 13 SRAM MT5C2568 AS5C2568 Austin Semiconductor, Inc. ORDERING INFORMATION EXAMPLE: MT5C2568CW-25L/XT MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 Package Type C CW C CW C CW C CW C CW C CW C CW C CW MT5C2568 CW Device Number EXAMPLE: MT5C2568ECW-15L/IT -12 -12 -15 -15 -20 -20 -25 -25 -35 -35 -45 -45 -55 -55 -70 -70 L L L L L L L L L L L L L L L L /* /* /* /* /* /* /* /* /* /* /* /* /* /* /* /* MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 Package Type EC ECW EC ECW EC ECW EC ECW EC ECW EC ECW EC ECW EC ECW -100 L /* MT5C2568 ECW Speed ns Options** Process Device Number EXAMPLE: MT5C2568F-55/XT Speed ns Options** Process -12 -12 -15 -15 -20 -20 -25 -25 -35 -35 -45 -45 -55 -55 -70 -70 L L L L L L L L L L L L L L L L /* /* /* /* /* /* /* /* /* /* /* /* /* /* /* /* -100 L /* EXAMPLE: MT5C2568DCJ-70L/IT Device Number Package Type MT5C2568 F -12 L MT5C2568 F -15 MT5C2568 F MT5C2568 Device Number Package Type /* MT5C2568 DCJ -12 L L /* MT5C2568 DCJ -15 L -20 L /* MT5C2568 DCJ -20 L F -25 L /* MT5C2568 DCJ -25 L MT5C2568 F -35 L /* MT5C2568 DCJ -35 L MT5C2568 F -45 L /* MT5C2568 DCJ -45 L MT5C2568 F -55 L /* MT5C2568 DCJ -55 L MT5C2568 F -70 L /* MT5C2568 DCJ -70 L MT5C2568 F -100 L /* Speed ns Options** Process Speed ns Options** Process /* /* /* /* /* /* /* /* /* /* /* /* /* /* /* /* *AVAILABLE PROCESSES IT = Industrial Temperature Range -40oC to +85oC XT = Extended Temperature Range -55oC to +125oC 883C = Full Military Processing -55oC to +125oC 12ns offered in IT only **DEFINITION OF OPTIONS 2V Data Retention / Low Power MT5C2568 / AS5C2568 Rev. 4.5 06/05 L Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 14 SRAM Austin Semiconductor, Inc. MT5C2568 AS5C2568 ASI TO DSCC PART NUMBER CROSS REFERENCE* ASI Package Designator C & CW ASI Package Designator EC & ECW ASI Part # MT5C2568C-20/883C MT5C2568C-25/883C MT5C2568C-35/883C MT5C2568C-45/883C MT5C2568C-55/883C MT5C2568C-70/883C SMD Part # 5962-8866207NX 5962-8866206NX 5962-8866205NX 5962-8866204NX 5962-8866203NX 5962-8866202NX ASI Part # MT5C2568EC-20/883C MT5C2568EC-25/883C MT5C2568EC-35/883C MT5C2568EC-45/883C MT5C2568EC-55/883C MT5C2568EC-70/883C SMD Part # 5962-8866207UX 5962-8866206UX 5962-8866205UX 5962-8866204UX 5962-8866203UX 5962-8866202UX MT5C2568CW-20/883C MT5C2568CW-25/883C MT5C2568CW-35/883C MT5C2568CW-45/883C MT5C2568CW-55/883C MT5C2568CW-70/883C MT5C2568CW-100/883C 5962-8866207XX 5962-8866206XX 5962-8866205XX 5962-8866204XX 5962-8866203XX 5962-8866202XX 5962-8866201XX MT5C2568ECW-20/883C MT5C2568ECW-25/883C MT5C2568ECW-35/883C MT5C2568ECW-45/883C MT5C2568ECW-55/883C MT5C2568ECW-70/883C MT5C2568ECW-100/883C 5962-8866207YX 5962-8866206YX 5962-8866205YX 5962-8866204YX 5962-8866203YX 5962-8866202YX 5962-8866201YX AS5C2568C-12L/883C AS5C2568C-15L/883C AS5C2568C-17L/883C AS5C2568C-20L/883C AS5C2568C-25L/883C AS5C2568C-35L/883C AS5C2568C-45L/883C AS5C2568C-55L/883C AS5C2568C-70L/883C 5962-8855213UA 5962-8855212UA 5962-8855211UA 5962-8855210UA 5962-8855206UA 5962-8855205UA 5962-8855209UA 5962-8855208UA 5962-8855207UA AS5C2568EC-12L/883C AS5C2568EC-15L/883C AS5C2568EC-17L/883C AS5C2568EC-20L/883C AS5C2568EC-25L/883C AS5C2568EC-35L/883C AS5C2568EC-45L/883C AS5C2568EC-55L/883C AS5C2568EC-70L/883C 5962-8855213MA 5962-8855212MA 5962-8855211MA 5962-8855210MA 5962-8855206MA 5962-8855205MA 5962-8855209MA 5962-8855208MA 5962-8855207MA AS5C2568CW-12L/883C AS5C2568CW-15L/883C AS5C2568CW-17L/883C AS5C2568CW-20L/883C AS5C2568CW-25L/883C AS5C2568CW-35L/883C AS5C2568CW-45L/883C AS5C2568CW-55L/883C AS5C2568CW-70L/883C 5962-8855213XA 5962-8855212XA 5962-8855211XA 5962-8855210XA 5962-8855206XA 5962-8855205XA 5962-8855209XA 5962-8855208XA 5962-8855207XA AS5C2568ECW-12L/883C AS5C2568ECW-15L/883C AS5C2568ECW-17L/883C AS5C2568ECW-20L/883C AS5C2568ECW-25L/883C AS5C2568ECW-35L/883C AS5C2568ECW-45L/883C AS5C2568ECW-55L/883C AS5C2568ECW-70L/883C 5962-8855213YA 5962-8855212YA 5962-8855211YA 5962-8855210YA 5962-8855206YA 5962-8855205YA 5962-8855209YA 5962-8855208YA 5962-8855207YA * ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. MT5C2568 / AS5C2568 Rev. 4.5 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 15 SRAM Austin Semiconductor, Inc. MT5C2568 AS5C2568 ASI TO DSCC PART NUMBER CROSS REFERENCE* ASI Package Designator F ASI Part # MT5C2568F-20/883C MT5C2568F-25/883C MT5C2568F-35/883C MT5C2568F-45/883C MT5C2568F-55/883C MT5C2568F-70/883C MT5C2568F-100/883C SMD Part # 5962-8866207TX 5962-8866206TX 5962-8866205TX 5962-8866204TX 5962-8866203TX 5962-8866202TX 5962-8866201TX AS5C2568F-12L/883C AS5C2568F-15L/883C AS5C2568F-17L/883C AS5C2568F-20L/883C AS5C2568F-25L/883C AS5C2568F-35L/883C AS5C2568F-45L/883C AS5C2568F-55L/883C AS5C2568F-70L/883C 5962-8855213TA 5962-8855212TA 5962-8855211TA 5962-8855210TA 5962-8855206TA 5962-8855205TA 5962-8855209TA 5962-8855208TA 5962-8855207TA * ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. MT5C2568 / AS5C2568 Rev. 4.5 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 16