AUSTIN MT5C6408EC-15L

SRAM
MT5C6408
Austin Semiconductor, Inc.
8K x 8 SRAM
PIN ASSIGNMENT
(Top View)
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY
SPECIFICATIONS
28-Pin DIP (C)
(300 MIL)
4 3 2 1 28 27 26
• High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns
• Battery Backup: 2V data retention
• High-performance, low-power CMOS double-metal
process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE1\ and CE2
• All inputs and outputs are TTL compatible
OPTIONS
MARKING
• Timing
12ns access
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
-12
-15
-20
-25
-35
-45
-55*
-70*
C
EC
F
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
Vss
Vcc
WE\
CE2
A8
A9
A11
OE\
A10
CE1\
DQ8
DQ7
DQ6
DQ5
DQ4
A5
A4
A3
A2
A1
A0
DQ0
25
24
23
22
21
20
19
5
6
7
8
9
10
11
A8
A9
A11
OE\
A10
CE1\
DQ7
12 13 14 15 16 17 18
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
WE\
CE2
A8
A9
A11
OE\
A10
CE1\
DQ8
DQ7
DQ6
DQ5
DQ4
GENERAL DESCRIPTION
The MT5C6408, 8K x 8 SRAM, employs high-speed,
low-power CMOS technology, eliminating the need for clocks
or refreshing. These SRAM’s have equal access and cycle
times.
For flexibility in high-speed memory applications,
Austin Semiconductor offers dual chip enables (CE1\, CE2) and
output enable (OE\) capability. These enhancements can place
the outputs in High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH.
Reading is accomplished when WE\ and CE2 remain HIGH and
CE1\ and OE\ go LOW. The device offers a reduced power
standby mode when disabled. This allows system designs to
achieve low standby power requirements.
These devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible.
No. 108
No. 204
No. 302
L
*Electrical characteristics identical to those provided for the
45ns access devices.
For more products and information
please visit our web site at
www.austinsemiconductor.com
MT5C6408
Rev. 3.0 2/01
28
27
26
25
24
23
22
21
20
19
18
17
16
15
28-Pin Flat Pack (F)
• Operating Temperature Ranges
Industrial (-40oC to +85oC)
IT
Military (-55oC to +125oC)
XT
• 2V data retention/low power
1
2
3
4
5
6
7
8
9
10
11
12
13
14
DQ6
DQ5
DQ4
DQ3
Vss
DQ2
DQ1
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
Vss
FEATURES
• Package(s)
Ceramic DIP (300 mil)
Ceramic LCC
Ceramic Flatpack
A6
A7
A12
NC
Vcc
WE\
CE2\
• SMD 5962-38294
• MIL-STD-883
28-Pin LCC (EC)
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
SRAM
MT5C6408
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
VCC
I/O CONTROL
DQ8
ROW DECODER
A0
A1
A2
A3
A4
A5
A6
A7
Vss
65,536-BIT
MEMORY ARRAY
DQ1
CE1\
CE2
COLUMN DECODER
OE\
WE\
A8
A9
A10
A11
A12
POWER
DOWN
TRUTH TABLE
MODE
STANDBY
STANDBY
READ
READ
WRITE
MT5C6408
Rev. 3.0 2/01
CE1\
H
X
L
L
L
CE2
X
L
H
H
H
WE\
X
X
H
H
L
OE\
X
X
L
H
X
DQ
POWER
HIGH-Z STANDBY
HIGH-Z STANDBY
Q
ACTIVE
HIGH-Z ACTIVE
D
ACTIVE
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
SRAM
MT5C6408
Austin Semiconductor, Inc.
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
ABSOLUTE MAXIMUM RATINGS*
Voltage on any Input or DQ Relative to Vss........-0.5V to +7.0V
Voltage on Vcc Supply Relative to Vss.................-0.5V to +7.0V
Storage Temperature….........................................-65oC to +150oC
Power Dissipation......................................................................1W
Max Junction Temperature..................................................+175°C
Lead Temperature (soldering 10 seconds)........................+260oC
Short Circuit Output Current................................................50mA
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
CONDITIONS
0V ≤ VIN ≤ Vcc
Output(s) disabled
0V < VOUT < Vcc
IOH = -4.0mA
IOL = 8.0mA
Output Leakage Current
Output High Voltage
Output Low Voltage
PARAMETER
Power Supply
Current: Operating
Power Supply
Current: Standby
SYMBOL
VIH
VIL
IL I
MIN
2.2
-0.5
-10
MAX
Vcc+0.5
0.8
10
-10
2.4
10
µA
0.4
V
V
ILO
VOH
VOL
UNITS
V
V
µA
NOTES
1
1, 2
1
1
CONDITIONS
CE\ < VIL; VCC = MAX
f = MAX = 1/tRC (MIN)
Output Open
SYM
-12
-15
MAX
-20
-25
-35
-45
Icc
180
170
160
155
155
145
mA
CE\ > VIH; All Other Inputs
< VIL or > VIH, VCC = MAX
f = 0 Hz
ISBTSP
40
40
40
40
40
40
mA
ISBTLP
30
30
30
30
30
30
mA
CE\ > (VCC -0.2); VCC = MAX
All Other Inputs < 0.2V
or > (VCC - 0.2V), f = 0 Hz
ISBCSP
20
20
20
20
20
20
mA
ISBCLP
10
10
10
10
10
10
mA
UNITS NOTES
3
CAPACITANCE
DESCRIPTION
Input Capacitance
Output Capacitance
MT5C6408
Rev. 3.0 2/01
CONDITIONS
o
TA = 25 C, f = 1MHz
Vcc = 5V
SYM
MAX
UNITS
NOTES
CI
6
pF
4
CO
7
pF
4
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
SRAM
MT5C6408
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION
READ CYCLE
READ cycle time
Address access time
Chip Enable access time
Output hold from address change
Chip Enable to output in Low-Z
Chip disable to output in High-Z
Output Enable access time
Output Enable to output in Low-Z
Output disable to output in High-Z
WRITE CYCLE
WRITE cycle time
Chip Enable to end of write
Address valid to end of write
Address setup time
Address hold from end of write
WRITE pulse width
Data setup time
Data hold time
Write disable to output in Low-Z
Write Enable to output in High-Z
MT5C6408
Rev. 3.0 2/01
-12
-15
-20
-25
-35
-45
SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
tRC
tAA
tACE
tOH
tLZCE
tHZCE
tAOE
tLZOE
tHZOE
12
tWC
tCW
tAW
tAS
tAH
tWP
tDS
tDH
12
10
10
0
0
10
7
0
2
0
tLZWE
tHZWE
15
12
12
2
2
20
15
15
0
0
7
8
0
0
0
10
12
0
7
7
0
0
0
10
3
0
0
10
15
25
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3
0
0
25
20
0
30
35
30
30
0
0
30
15
5
0
0
40
ns
ns
ns
ns
ns
ns
ns
ns
ns
45
45
15
15
15
25
20
20
0
0
20
15
0
0
0
45
35
35
15
15
15
20
15
15
0
0
15
12
0
0
0
35
25
25
15
15
10
15
13
13
0
0
13
10
0
0
0
25
20
20
15
45
40
40
0
0
40
20
5
0
0
7
6, 7
6
7
6, 7
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
SRAM
MT5C6408
Austin Semiconductor, Inc.
AC TEST CONDITIONS
Input pulse levels ...................................... Vss to 3.0V
Input rise and fall times ......................................... 5ns
Input timing reference levels ................................ 1.5V
Output reference levels ....................................... 1.5V
Output load ................................. See Figures 1 and 2
167Ω
Q
30pF
167Ω
VTH = 1.73V Q
VTH = 1.73V
5pF
Fig. 1 Output Load
Equivalent
Fig. 2 Output Load
Equivalent
allowing for actual tester RC time constant.
7. At any given temperature and voltage condition,
tHZCE is less than tLZCE, and tHZWE is less than tLZWE and
tHZOE is less than tLZOE.
8. WE\ is HIGH for READ cycle.
9. Device is continuously selected. Chip enables and
output enables are held in their active state.
10. Address valid prior to, or coincident with, latest
occurring chip enable.
11. tRC = Read Cycle Time.
12. CE2 timing is the same as CE1\ timing. The waveform is
inverted.
13. Chip enable (CE1\, CE2) and write enable (WE\) can
initiate and terminate a WRITE cycle.
NOTES
1.
2.
3.
All voltages referenced to VSS (GND).
-3V for pulse width < 20ns
ICC is dependent on output loading and cycle rates.
The specified value applies with the outputs
unloaded, and f =
1
Hz.
t
RC (MIN)
4. This parameter is guaranteed but not tested.
5. Test conditions as specified with the output loading
as shown in Fig. 1 unless otherwise noted.
6. tLZCE, tLZWE, tLZOE, tHZCE, tHZOE and tHZWE
are specified with CL = 5pF as in Fig. 2. Transition is
measured ±200mV typical from steady state voltage,
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION
CONDITIONS
VCC for Retention Data
SYM
MIN
MAX
UNITS
NOTES
VDR
2
---
V
300
µA
---
ns
4
ns
4, 11
CE\ > (VCC - 0.2V)
Data Retention Current
VIN > (VCC - 0.2V)
or < 0.2V
VCC = 2V
Chip Deselect to Data
Retention Time
Operation Recovery Time
ICCDR
tCDR
0
tR
tRC
LOW Vcc DATA RETENTION WAVEFORM
DATA RETENTION MODE
VCC
4.5V
VDR > 2V
t CDR
CE\
VIH
VIL
1234
123456789
123
123456789
123
1234
123456789
123
1234
123456789
123
1234
4.5V
tR
VDR
12345678
1234
123
12345678
1234
123
12345678
1234
123
12345678
1234
123
123
123
123
123 DON’T CARE
1234
1234
1234
1234UNDEFINED
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
SRAM
MT5C6408
Austin Semiconductor, Inc.
READ CYCLE NO. 1
8, 9
ttRC
RC
ADDRESS
VALID
ttAA
AA
ttOH
OH
DQ
PREVIOUS DATA VALID
DATA VALID
READ CYCLE NO. 2
7, 8, 10, 12
ttRC
RC
CE\
ttAOE
AOE
t
HZOE
tHZOE
tLZOE
tLZOE
OE\
ttLZCE
LZCE
tACE
tACE
tHZCE
tHZCE
DQ
DATA VALID
ttPU
PU
ttPD
PD
Icc
1234
1234
1234DON’T CARE
1234
1234
1234
1234 UNDEFINED
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
SRAM
MT5C6408
Austin Semiconductor, Inc.
WRITE CYCLE NO. 1 12
(Chip Enabled Controlled)
t
WC
tWC
ADDRESS
tAW
tAW
ttAS
AS
t
AH
tAH
tCW
tCW
CE\
1234567890123456789012
1
1
WE\ 1234567890123456789012
t WP
tWP1
1123456789012345678901234567890121234567890
1123456789012345678901234567890121234567890
t DH
tDH
ttDS
DS
DQ
D
DATA VAILD
Q
HIGH Z
WRITE CYCLE NO. 2 7, 12, 13
(Write Enabled Controlled)
tWC
tWC
ADDRESS
tAW
tAW
12345678901234567
121
12345678901234567
12
121
CE\ 12345678901234567
ttAS
AS
WE\
ttAH
AH
tCW
tCW
12345678901234567890123
1
1212345678901234567890123
112345678901234567890123
t WP
tWP1
123456789
123456789
123456789
tDS
DQ
D
t DH
tDH
DATA VALID
Q
HIGH-Z
1234
1234
1234DON’T CARE
1234
12345
12345
12345
12345UNDEFINED
NOTE: Output enable (OE\) is inactive (HIGH).
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
SRAM
MT5C6408
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #108 (Package Designator C)
SMD 5962-38294, Case Outline Z
D
S2
A
Q
L
E
S1
b2
e
b
eA
c
SMD SPECIFICATIONS
MIN
MAX
SYMBOL
A
--0.225
b
0.014
0.026
b2
0.045
0.065
c
0.008
0.018
D
--1.485
E
0.240
0.310
eA
0.300 BSC
e
0.100 BSC
L
0.125
0.200
Q
0.015
0.070
S1
0.005
--S2
0.005
--NOTE: These dimensions are per the SMD. ASI's package dimensional limits may
differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
SRAM
MT5C6408
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #204 (Package Designator EC)
SMD 5962-38294, Case Outline U
D1
B2
D2
L2
e
E3
E
E1
E2
h x 45o
D
L
hx45o
B1
D3
A
A1
SYMBOL
A
A1
B1
B2
D
D1
D2
D3
E
E1
E2
E3
e
h
L
L2
SMD SPECIFICATIONS
MIN
MAX
0.060
0.075
0.050
0.065
0.022
0.028
0.072 REF
0.342
0.358
0.200 BSC
0.100 BSC
--0.358
0.540
0.560
0.400 BSC
0.200 BSC
--0.558
0.050 BSC
0.040 REF
0.045
0.055
0.075
0.095
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may
differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
SRAM
MT5C6408
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #302 (Package Designator F)
SMD 5962-38294, Case Outline M
e
b
D
S
Top View
E
L
A
c
Q
E2
E3
SYMBOL
A
b
c
D
E
E2
E3
e
L
Q
S
SMD SPECIFICATIONS
MIN
MAX
0.045
0.115
0.015
0.019
0.004
0.009
--0.640
0.350
0.420
0.180
--0.030
--0.050 BSC
0.250
0.370
0.026
0.045
0.000
---
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may
differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
SRAM
MT5C6408
Austin Semiconductor, Inc.
ORDERING INFORMATION
EXAMPLE: MT5C6408C-25L/XT
Device Number
EXAMPLE: MT5C6408EC-15L/IT
Package Speed
Options** Process
Type
ns
MT5C6408
C
MT5C6408
MT5C6408
MT5C6408
Device Number
MT5C6408
Package Speed
Options** Process
Type
ns
-12
L
/*
EC
-12
L
/*
C
-15
L
/*
MT5C6408
C
-20
L
/*
MT5C6408
EC
-15
L
/*
EC
-20
L
/*
C
-25
L
/*
MT5C6408
EC
-25
L
/*
MT5C6408
C
-35
L
/*
MT5C6408
EC
-35
L
/*
MT5C6408
C
-45
L
/*
MT5C6408
EC
-45
L
/*
MT5C6408
C
-55
L
/*
MT5C6408
EC
-55
L
/*
MT5C6408
C
-70
L
/*
MT5C6408
EC
-70
L
/*
EXAMPLE: MT5C6408F-55/883C
Device Number
Package Speed
Options** Process
Type
ns
MT5C6408
F
-12
L
/*
MT5C6408
F
-15
L
/*
MT5C6408
F
-20
L
/*
MT5C6408
F
-25
L
/*
MT5C6408
F
-35
L
/*
MT5C6408
F
-45
L
/*
MT5C6408
F
-55
L
/*
MT5C6408
F
-70
L
/*
*AVAILABLE PROCESSES
IT = Industrial Temperature Range
XT = Extended Temperature Range
883C = Full Military Processing
-40oC to +85oC
-55oC to +125oC
-55oC to +125oC
** OPTIONS
L = 2V Data Retention/Low Power
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
SRAM
Austin Semiconductor, Inc.
MT5C6408
ASI TO DSCC PART NUMBER
CROSS REFERENCE*
ASI Package Designator EC
ASI Package Designator C
ASI Part #
MT5C6808C-12/883C
MT5C6808C-12L/883C
MT5C6808C-20/883C
MT5C6808C-20L/883C
MT5C6808C-25/883C
MT5C6808C-25L/883C
MT5C6808C-35/883C
MT5C6808C-35L/883C
MT5C6808C-45/883C
MT5C6808C-45L/883C
MT5C6808C-55/883C
MT5C6808C-55L/883C
MT5C6808C-70/883C
SMD Part #
5962-3829447MZX
5962-3829446MZX
5962-3829458MZA
5962-3829457MZA
5962-3829456MZA
5962-3829455MZA
5962-3829454MZA
5962-3829453MZA
5962-3829452MZA
5962-3829451MZA
5962-3829450MZA
5962-3829449MZA
5962-3829448MZA
ASI Part #
MT5C6808EC-12/883C
MT5C6808EC-12L/883C
MT5C6808EC-20/883C
MT5C6808EC-20L/883C
MT5C6808EC-25/883C
MT5C6808EC-25L/883C
MT5C6808EC-35/883C
MT5C6808EC-35L/883C
MT5C6808EC-45/883C
MT5C6808EC-45L/883C
MT5C6808EC-55/883C
MT5C6808EC-55L/883C
MT5C6808EC-70/883C
SMD Part #
5962-3829447MUX
5962-3829446MUX
5962-3829458MUA
5962-3829457MUA
5962-3829456MUA
5962-3829455MUA
5962-3829454MUA
5962-3829453MUA
5962-3829452MUA
5962-3829451MUA
5962-3829450MUA
5962-3829449MUA
5962-3829448MUA
ASI Package Designator F
ASI Part #
MT5C6808F-12/883C
MT5C6808F-12L/883C
MT5C6808F-20/883C
MT5C6808F-20L/883C
MT5C6808F-25/883C
MT5C6808F-25L/883C
MT5C6808F-35/883C
MT5C6808F-35L/883C
MT5C6808F-45/883C
MT5C6808F-45L/883C
MT5C6808F-55/883C
MT5C6808F-55L/883C
MT5C6808C-70/883C
SMD Part #
5962-3829447MMX
5962-3829446MMX
5962-3829458MMA
5962-3829457MMA
5962-3829456MMA
5962-3829455MMA
5962-3829454MMA
5962-3829453MMA
5962-3829452MMA
5962-3829451MMA
5962-3829450MMA
5962-3829449MMA
5962-3829448MZA
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
MT5C6408
Rev. 3.0 2/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12