CHENMKO ENTERPRISE CO.,LTD CH402H-40PT SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.02 Ampere APPLICATION * Low barrier diode for detectors up to GHz frequencies SOT-143 FEATURE * Small surface mounting type. (SOT-143) * Extremely low forward voltage. * A composite component and is ideal for reducing the number of components used. 0.4±0.1 0.4±0.1 * High reliability 1.9±0.1 0.95 CONSTRUCTION (3) (2) (4) (1) 0.4±0.1 * Silicon epitaxial planar 2.9±0.2 1.70±0.1 0.8±0.1 1.30±0.1 MARKING * H1 1.1±0.1 0.55±0.1 0~0.1 0.10±0.05 0.1Min. CIRCUIT (4) (3) (1) (2) RATINGS Maximum Recurrent Peak Reverse Voltage 2.6Max. SOT-143 Dimensions in millimeters CH402H-40PT SYMBOL UNITS MIN. TYP. MAX. VRRM - - 40 Volts IO - - 20 mAmps PTOT - - 100 mW Typical Series Inductance LS - 2.0 - nH Typical Case Capacitance CC - 0.1 - pF Typical Junction Capacitance between Terminal (Note 1) CJ - 0.35 0.6 pF Typical Differential Resistance (Note 2) RO - 225 - k TJ,TSTG -55 - +150 o Maximum Average Forward Rectified Current Total Power Dissipation, TS< 85 oC Operating and Storage Temperature Range C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CH402H-40PT CHARACTERISTICS SYMBOL UNITS MIN. TYP. MAX. Maximum Instantaneous Forward Voltage at IF= 2mA VF - 0.58 1.00 Volts Maximum Average Reverse Current at VR= 40V IR - - 10 uAmps NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volt. 2. Measured at 10 KHZ and applied reverse voltage of 0 volt. 2. ESD sensitive product handling required. 2002-6 RATING CHARACTERISTIC CURVES ( CH402H-40PT ) Forward current IF = f (VF ) Forward current IF = f (TS ) TA = Parameter 10 2 IF 30 mA mA TA = 125 OC 85 OC 25 OC -40 OC 20 IF 10 1 10 0 15 10 10 -1 5 10 -2 0.0 0.5 1.0 1.5 V 0 0 2.0 15 30 45 60 75 90 105 120 °C Reverse current IR = f (VR ) Diode capacitance CJ = f (VR) TA = Parameter f = 1MHz 10 3 IR 150 TS VF 1.0 CJ A pF TA = 125 O C 0.8 85 O C 0.6 10 2 10 1 0.4 10 0 25 O C 0.2 10-1 0.0 10 20 30 V VR 40 0.0 0 10 20 30 V VR 40 RATING CHARACTERISTIC CURVES ( CH402H-40PT ) Rectifier voltage Vo = f (Vi ) f = 900MHz 10 1 VO V 10 0 10 -1 TA = 5k 20 k 100 k 200 k 1M 10 -2 10 -3 10 -4 Vin 10 10 -6 10 -3 Vout D.U.T. ~ ~ -5 50ohms 1nF RL f = 900 MHz 10 -2 10 -1 10 0 V 10 1 VI