CHONGQING BZX55C18

CHONGQING PINGYANG ELECTRONICS CO.,LTD.
BZX55C2V4 THRU BZX55C75
SILICON PLANAR ZENER DIODES
FEATURES
DO-41
·Voltage Range: 2.7V to 75V
·Double siug type construction
1.0(25.4)
MIN.
.034(0.9)
.028(0.7)
DIA.
.107(2.7)
.080(2.0)
DIA.
.205(5.2)
.166(4.2)
MECHANICAL DATA
1.0(25.4)
MIN.
·Case: Molded plastic
·Epoxy: UL94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color band denotes cathode end
·Mounting position: Any
·Weight: 0.33 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
Absolute Maximum Ratings (Ta=25°C)
SYMBOL
VALUE
units
Zener Current see Table “Characterstics”
Power Dissipation at Tamb=25°C
Ptot
0.51)
W
Junction Temperature
TJ
150
°C
1)
Valid provided that leads at a distance of 8 mm form case are kept at ambient temperature.
Characteristics at Tamb=25°C
SYMBOL
Forward Voltage at IF=250mA
VF
Min.
Typ.
Max.
units
--
--
1.2
V
Valid provided that leads at a distance of 8 mm form case are kept at ambient temperature.
１
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CHONGQING PINGYANG ELECTRONICS CO.,LTD.
SILICON PLANAR POWER ZENER DIODES
Zener Voltage range1)
TYPE
Vznom
IZT
for VZT
V2)
Dynamic recsistance
rZJT3)
IZM @ TA
Reverse
leakage
current
2)
IR
at VR
Max. Zener
Current
IZM @ TA4)
mA
Ω
mA
µA
V
mA
2.56
85
600
1
50
1
155
2.5
2.9
85
600
1
10
1
135
5
2.8
3.2
85
600
1
4
1
125
3.3
5
3.1
3.5
85
600
1
2
1
115
BZX55C3V6
3.6
5
3.4
3.8
85
600
1
2
1
105
BZX55C3V9
3.9
5
3.7
4.1
85
600
1
2
1
95
BZX55C4V3
4.3
5
4.0
4.6
75
600
1
1.0
1
90
BZX55C4V7
4.7
5
4.4
5.0
60
600
1
0.5
1
85
BZX55C5V1
5.1
5
4.8
5.4
35
550
1
0.1
1
80
BZX55C5V6
5.6
5
5.2
6.0
25
450
1
0.1
1
70
BZX55C6V2
6.2
5
5.8
6.6
10
200
1
0.1
2
64
BZX55C6V8
6.8
5
6.4
7.2
8.0
150
1
0.1
3
58
BZX55C7V5
7.5
5
7.0
7.9
7.0
50
1
0.1
5
53
BZX55C8V2
8.2
5
7.7
8.7
7.0
50
1
0.1
6.2
47
BZX55C9V1
9.1
5
8.5
9.6
10
50
1
0.1
6.8
43
BZX55C10
10
5
9.4
10.6
15
70
1
0.1
7.5
40
BZX55C11
11
5
10.4
11.6
20
70
1
0.1
8.2
36
BZX55C12
12
5
11.4
12.7
20
90
1
0.1
9.1
32
BZX55C13
13
5
12.4
14.1
26
110
1
0.1
10
29
BZX55C15
15
5
13.8
15.6
30
110
1
0.1
11
27
BZX55C16
16
5
15.3
17.1
40
170
1
0.1
12
24
BZX55C18
18
5
16.8
19.1
50
170
1
0.1
13
21
BZX55C20
20
5
18.8
21.2
55
220
1
0.1
15
20
BZX55C22
22
5
20.8
23.3
55
220
1
0.1
16
18
BZX55C24
24
5
22.8
25.6
80
220
1
0.1
18
16
BZX55C27
27
5
25.1
28.9
80
220
1
0.1
20
14
BZX55C30
30
5
28
32
80
220
1
0.1
22
13
BZX55C33
33
5
31
35
80
220
1
0.1
24
12
BZX55C36
36
5
34
38
80
220
1
0.1
27
11
BZX55C39
39
2.5
37
41
90
500
0.5
0.1
30
10
BZX55C43
43
2.5
40
46
90
600
0.5
0.1
33
9.2
BZX55C47
47
2.5
44
50
110
700
0.5
0.1
36
8.5
BZX55C51
51
2.5
48
54
125
700
0.5
0.1
39
7.8
BZX55C56
56
2.5
52
60
135
1000
0.5
0.1
43
7
BZX55C62
62
2.5
58
66
150
1000
0.5
0.1
47
6.4
BZX55C68
68
2.5
64
72
200
1000
0.5
0.1
51
5.9
BZX55C75
75
2.5
70
79
250
1500
0.5
0.1
56
5.3
V
mA
BZX55C2V4
2.4
5
2.28
BZX55C2V7
2.7
5
BZX55C3V0
3.0
BZX55C3V3
２
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CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1)
Tested with pulses tp=20 ms.
2)
Tolerance designation — The type numbers listed have zener voltage min/max limits as shown. Device tolerance of ±2%
are indicated by a “B” instead of a “C”. Zener voltage is measured with the device junction in thermal equilibrium at the
lead temperature of 30°C ±1°C and 3/8, lead length.
3)
ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current applied. The specified
limtis are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 1.0 kHz.
4)
This data was calculated using nominal voltages. The maximum current handling capability on a worst case basis is
limited by the actual zener voltage at the operating point and the power derating curve.
３
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