Data sheet

BZX55C2V0BZX55C75
SILICON PLANAR ZENER DIODE
FEATURES
* Zener Voltage Range 2.0 to 75 Volts
* DO-34 Package (JEDEC)
* Through-Hole Device Type Mounting
* Hermetically Sealed Glass
* Compression Bonded Construction
* All external surfaces are corrosion resistant and leads
are readily solderable
DO-34
.022 (0.55)
DIA.
.018 (0.46)
1.00 (25.4)
MIN.
.120 (3.04)
MAX.
.075 (1.9)
MAX.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
DIA.
1.00 (25.4)
MIN.
Ratings at 25 o C ambient temperature unless otherwise specified.
Dimensions in inches and (millimeters)
o
MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted )
RATINGS
SYMBOL
VALUE
UNITS
Power Dissipation
PD
500
mW
Junction Temperature
TJ
200
O
Tstg
-65to+200
O
Storage Temperature Range
C
C
2007-4
ELECTRICAL CHARACTERISTICS
VZT@IZT
O
ZZT@IZT
IZT
(Volts)
TYPE
(@TA=25 C unless otherwise specified)
(mA)
(W)
IZT
(mA)
MAX
ZZT@IZT
IR@VR
(W)
(uA)
MAX
MAX
VR
(Volts)
MIN
MAX
BZX55C2V0
1.88
2.11
5
100
1
600
100
1
BZX55C2V2
2.08
2.33
5
100
1
600
100
1
BZX55C2V4
2.28
2.56
5
85
1
600
50
1
BZX55C2V7
2.51
2.89
5
85
1
600
10
1
BZX55C3V0
2.8
3.2
5
85
1
600
4
1
BZX55C3V3
3.1
3.5
5
85
1
600
2
1
BZX55C3V6
3.4
3.8
5
85
1
600
2
1
BZX55C3V9
3.7
4.1
5
85
1
600
2
1
BZX55C4V3
4.0
4.6
5
75
1
600
1
1
BZX55C4V7
4.4
5.0
5
60
1
600
0.5
1
BZX55C5V1
4.8
5.4
5
35
1
550
0.1
1
BZX55C5V6
5.2
6.0
5
25
1
450
0.1
1
BZX55C6V2
5.8
6.6
5
10
1
200
0.1
2
BZX55C6V8
6.4
7.2
5
8
1
150
0.1
3
BZX55C7V5
7.0
7.9
5
7
1
50
0.1
5
BZX55C8V2
7.7
8.7
5
7
1
50
0.1
6.2
BZX55C9V1
8.5
9.6
5
10
1
50
0.1
6.8
BZX55C10
9.4
10.6
5
15
1
70
0.1
7.5
BZX55C11
10.4
11.6
5
20
1
70
0.1
8.2
BZX55C12
11.4
12.7
5
20
1
90
0.1
9.1
BZX55C13
12.4
14.1
5
26
1
110
0.1
10
BZX55C15
13.8
15.6
5
30
1
110
0.1
11
BZX55C16
15.3
17.1
5
40
1
170
0.1
12
BZX55C18
16.8
19.1
5
50
1
170
0.1
13
BZX55C20
18.8
21.1
5
55
1
220
0.1
15
BZX55C22
20.8
23.3
5
55
1
220
0.1
16
BZX55C24
22.8
25.6
5
80
1
220
0.1
18
BZX55C27
25.1
28.9
5
80
1
220
0.1
20
BZX55C30
28
32
5
80
1
220
0.1
22
BZX55C33
31
35
5
80
1
220
0.1
24
BZX55C36
34
38
5
80
1
220
0.1
27
BZX55C39
37
41
5
90
0.5
500
0.1
28
ELECTRICAL CHARACTERISTICS
VZT@IZT
O
ZZT@IZT
IZT
(Volts)
TYPE
(@TA=25 C unless otherwise specified)
(mA)
(W)
IZT
(mA)
MAX
ZZT@IZT
IR@VR
(W)
(uA)
MAX
MAX
VR
(Volts)
MIN
MAX
BZX55C43
40
46
2.5
90
0.5
600
0.1
32
BZX55C47
44
50
2.5
110
0.5
700
0.1
35
BZX55C51
48
54
2.5
125
0.5
700
0.1
38
BZX55C56
52
60
2.5
135
0.5
1000
0.1
42
BZX55C62
58
66
2.5
150
0.5
1000
0.1
47
BZX55C68
64
72
2.5
160
0.5
1000
0.1
51
BZX55C75
70
80
2.5
170
0.5
1000
0.1
56
500
400
300
200
100
0
0
40
80
120
160
200
TA, AMBIENT TEMPERATURE
RqJA,THERMAL RESISTANCE JUNCTION TO AMBIENT(K/W)
PD, TOTAL POWER DISSIPATION (mW)
RATING AND CHARACTERISTICS CURVES ( BZX55C2V0-BZX55C75)
500
400
300
200
100
0
0
O
TJ=25 C
150
100
50
0
0
5
10
15
20
25
15
20
Figure2 Thermal Resistance vs Lead Length
DIFFERENTIAL ZENER RESISTANCE(W)
CJ,DIODE CAPACITANCE(pF)
VR=2V
10
I,LEAD LENGTH(mm)
Figure1 Power Dissipation vs Ambient Temperature
200
5
1000
O
TJ=25 C
IZ=1mA
100
5mA
10
1
10mA
0
5
10
15
20
VZ, ZENER VOLTAGE(V)
VZ, ZENER VOLTAGE(V)
Figure3 Diode Capacitance vs Zener Voltage
Figure4 Differential Zener Impedance
25
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specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
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