CHONGQING P600D-6A2

CHONGQING PINGYANG ELECTRONICS CO.,LTD.
6A05/P600A THRU 6A10/P600M
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE:50-1000V
CURRENT:6.0A
FEATURES
R-6
·Low cost
·Low leakage
·Low forward voltage drop
·High current capability
·High surge current capability
MECHANICAL DATA
·Case: Molded plastic
·Epoxy: UL94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color band denotes cathode end
·Mounting position: Any
·Weight: 2.08 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
P600A P600B P600D P600G P600J P600K P600M
SYMBOL
units
6A05 6A1 6A2 6A4 6A8 6A8 6A10
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800 1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800 1000
V
Maximum Average Forward rectified Current
at TA=75°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Instantaneous forward Voltage at 6.0A
DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Notes:
6.0
A
IFSM
250
A
VF
1.1
V
10
@ TA=25°C
@ TA=100°C
Maximum Full Load Reverse Current Average,
Full Cycle .375”(9.5mm) lead length at TL=75°C
Typical Junction Capacitance (Note)
Typical Thermal Resistance
Io
IR
500
µA
50
CJ
RθJA
Measured at 1MHz and applied reverse voltage of 4.0 volts
1
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150
10
pF
°C/W