CHONGQING PINGYANG ELECTRONICS CO.,LTD. 10A05 THRU 10A10 TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE：50-1000V CURRENT：10.0A FEATURES R-6 ·Low cost ·Low leakage ·Low forward voltage drop ·High current capability ·High surge current capability MECHANICAL DATA ·Case: Molded plastic ·Epoxy: UL94V-0 rate flame retardant ·Lead: MIL-STD- 202E, Method 208 guaranteed ·Polarity:Color band denotes cathode end ·Mounting position: Any ·Weight: 2.08 grams Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. 10A05 10A1 10A2 10A4 10A6 10A8 10A10 Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward rectified Current at TA=75°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Instantaneous forward Voltage at10.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage 50 35 50 100 70 100 @ TA=100°C 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 V V V Io 10.0 A IFSM 300 A VF 1.0 V 10 @ TA=25°C Maximum Full Load Reverse Current Average, Full Cycle .375”(9.5mm) lead length at TL=75°C Typical Junction Capacitance (Note) Typical Thermal Resistance Notes: VRRM VRMS VDC IR 500 µA 50 CJ RθJA Measured at 1MHz and applied reverse voltage of 4.0 volts １ PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn 150 10 pF °C/W