COMCHIP Low V F SMD Sch ottky Bar rier Rect ifier s SMD Diodes Specialist CDBA120L-G Thru. CDBA140SL-G Reverse Voltage: 20 to 40 Volts Forward Current: 1.0 Amp RoHS Device Features DO-214AC (SMA) -Ideal for surface mount applications. -Easy pick and place. 0.180(4.57) 0.160(4.06) -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.110(2.79) 0.086(2.18) 0.067(1.70) 0.051(1.29) -Built in strain relief. -Super low forward voltage drop. Mechanical data 0.209(5.31) 0.185(4.70) -Case: JEDEC DO-214AC, molded plastic. 0.012(0.31) 0.006(0.15) 0.091(2.31) 0.067(1.70) -Terminals: solderable per MIL-STD-750, method 2026. 0.059(1.50) 0.035(0.89) 0.008(0.20) 0.004(0.10) -Polarity: Color band denotes cathode end. -Approx. weight: 0.063 grams Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol CDBA 120L-G CDBA 120LL-G CDBA 140L-G Max. repetitive peak reverse voltage V RRM 20 20 40 Max. DC blocking voltage V DC 20 20 Max. RMS voltage V RMS 14 14 Peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (JEDEC method) I FSM 35 A Max. average forward current IO 1.0 A Max. instantaneous forward voltage at 1.0A VF T A =25 OC T A =80 OC IR 1.0 40 RθJA R θJL 88 20 TJ 125 O C T STG -55 to +125 O C Parameter Max. DC reverse current at rated DC blocking voltage Max. thermal resistance (Note 1) Max. operating junction temperature Storage temperature 0.38 0.31 CDBA 140SL-G Units 40 40 V 40 40 40 V 28 28 28 V 0.40 CDBA 140LL-G 0.34 0.31 V mA O C/W Notes: 1. Thermal resistance from junction to ambient and junction to lead, P.C.B. mounted on 0.2×0.2 inch 2 copper pad area. REV:A Page 1 QW-BL003 Comchip Technology CO., LTD. COMCHIP Low V F SMD Sch ottky Bar rier Rect ifier s SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBA120L-G thru CDBA140SL-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 100 10 T J =25 OC Pulse width 300μS 4% duty cycle F o r w a rd C u rren t (A) R e v e r s e C u r rent (mA) 10 1 O T J =75 C 1 CDBA120LL-G CDBA120L-G 0.1 0.01 0.1 O T J =25 C 0.01 0.001 0 40 80 120 160 0 200 100 Percent of Rated Peak Reverse Voltage (%) Fig.3 Junction Capacitance 400 300 500 Fig.4 Forward Characteristics 700 10 T J =25 OC f=1MHz and applied 4VDC reverse voltage 600 C D CDBA140LL-G BA 500 CD 400 BA 12 14 0L L- 0S L- G G/ 14 300 CDB 200 A12 Forward Current ( A ) J u n c ti o n C apaci t ance (p F ) 200 Forward Voltage (mV) 0L-G 0L L -G /1 4 0 L-G 1 CDBA140SL-G CDBA140L-G 0.1 0.01 100 O T J =25 C Pulse width 300μS 4% duty cycle 0 0.01 0.001 0.1 1 10 0 100 100 Reverse Voltage (V) 200 400 300 500 Forward Voltage (mV) Fig.5 Non-repetitive Forward Surge Current Fig.6 Current Derating Curve 60 1.4 50 A v e r a g e F o r w a r d C u r rent ( A ) P e a k F o r w a r d S u r g e Cur r e n t (A ) O T J =25 C 8.3ms single half sine wave, JEDEC method 40 30 20 10 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 10 100 0 25 50 75 100 125 150 175 O Ambient Temperature ( C) Number of Cycles at 60Hz REV:A Page 2 QW-BL003 Comchip Technology CO., LTD.