COMCHIP CDBA120LL-G

COMCHIP
Low V F SMD Sch ottky Bar rier Rect ifier s
SMD Diodes Specialist
CDBA120L-G Thru. CDBA140SL-G
Reverse Voltage: 20 to 40 Volts
Forward Current: 1.0 Amp
RoHS Device
Features
DO-214AC (SMA)
-Ideal for surface mount applications.
-Easy pick and place.
0.180(4.57)
0.160(4.06)
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.110(2.79)
0.086(2.18)
0.067(1.70)
0.051(1.29)
-Built in strain relief.
-Super low forward voltage drop.
Mechanical data
0.209(5.31)
0.185(4.70)
-Case: JEDEC DO-214AC, molded plastic.
0.012(0.31)
0.006(0.15)
0.091(2.31)
0.067(1.70)
-Terminals: solderable per MIL-STD-750,
method 2026.
0.059(1.50)
0.035(0.89)
0.008(0.20)
0.004(0.10)
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.063 grams
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Symbol
CDBA
120L-G
CDBA
120LL-G
CDBA
140L-G
Max. repetitive peak reverse voltage
V RRM
20
20
40
Max. DC blocking voltage
V DC
20
20
Max. RMS voltage
V RMS
14
14
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
I FSM
35
A
Max. average forward current
IO
1.0
A
Max. instantaneous forward voltage at
1.0A
VF
T A =25 OC
T A =80 OC
IR
1.0
40
RθJA
R θJL
88
20
TJ
125
O
C
T STG
-55 to +125
O
C
Parameter
Max. DC reverse current at
rated DC blocking voltage
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
0.38
0.31
CDBA
140SL-G
Units
40
40
V
40
40
40
V
28
28
28
V
0.40
CDBA
140LL-G
0.34
0.31
V
mA
O
C/W
Notes: 1. Thermal resistance from junction to ambient and junction to lead, P.C.B. mounted on 0.2×0.2 inch 2 copper pad area.
REV:A
Page 1
QW-BL003
Comchip Technology CO., LTD.
COMCHIP
Low V F SMD Sch ottky Bar rier Rect ifier s
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBA120L-G thru CDBA140SL-G)
Fig.1 Reverse Characteristics
Fig.2 Forward Characteristics
100
10
T J =25 OC
Pulse width 300μS
4% duty cycle
F o r w a rd C u rren t (A)
R e v e r s e C u r rent (mA)
10
1
O
T J =75 C
1
CDBA120LL-G
CDBA120L-G
0.1
0.01
0.1
O
T J =25 C
0.01
0.001
0
40
80
120
160
0
200
100
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Junction Capacitance
400
300
500
Fig.4 Forward Characteristics
700
10
T J =25 OC
f=1MHz and applied
4VDC reverse voltage
600
C
D
CDBA140LL-G
BA
500
CD
400
BA
12
14
0L
L-
0S
L-
G
G/
14
300
CDB
200
A12
Forward Current ( A )
J u n c ti o n C apaci t ance (p F )
200
Forward Voltage (mV)
0L-G
0L
L -G
/1 4 0
L-G
1
CDBA140SL-G
CDBA140L-G
0.1
0.01
100
O
T J =25 C
Pulse width 300μS
4% duty cycle
0
0.01
0.001
0.1
1
10
0
100
100
Reverse Voltage (V)
200
400
300
500
Forward Voltage (mV)
Fig.5 Non-repetitive Forward Surge
Current
Fig.6 Current Derating Curve
60
1.4
50
A v e r a g e F o r w a r d C u r rent ( A )
P e a k F o r w a r d S u r g e Cur r e n t (A )
O
T J =25 C
8.3ms single half sine
wave, JEDEC method
40
30
20
10
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1
10
100
0
25
50
75
100
125
150
175
O
Ambient Temperature ( C)
Number of Cycles at 60Hz
REV:A
Page 2
QW-BL003
Comchip Technology CO., LTD.