SMD Schottky Barrier Rectifiers CDBB120-G Thru. CDBB1100-G Reverse Voltage: 20 to 100 Volts Forward Current: 1.0 Amp RoHS Device Features DO-214AA (SMB) -Ideal for surface mount applications. -Easy pick and place. 0.185(4.70) 0.160(4.06) -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.155(3.94) 0.130(3.30) 0.083(2.11) 0.075(1.91) -Built-in strain relief. -Low forward voltage drop. Mechanical data 0.220(5.59) 0.200(5.08) -Case: JEDEC DO-214AA, molded plastic. 0.012(0.31) 0.006(0.15) 0.096(2.44) 0.083(2.13) -Terminals: solderable per MIL-STD-750, method 2026. 0.008(0.20) 0.004(0.10) 0.050(1.27) 0.030(0.76) -Polarity: Color band denotes cathode end. -Approx. weight: 0.093 grams Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Symbol CDBB 120-G CDBB 140-G CDBB 160-G CDBB 180-G CDBB 1100-G Units Max. repetitive peak reverse voltage VRRM 20 40 60 80 100 V Max. DC blocking voltage VDC 20 40 60 80 100 V Max. RMS voltage VRMS 14 28 42 56 70 V Peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (JEDEC method) IFSM 30 A Max. average forward current IO 1.0 A Max. instantaneous forward voltage at 1.0A VF Parameter Max. DC reverse current at TA=25 rated DC blocking voltage TA=100 Max. thermal resistance (Note 1) Max. operating junction temperature Storage temperature O C C O 0.50 0.85 0.70 V IR 0.5 10 RθJA RθJL 75 17 TJ 125 O C TSTG -65 to +150 O C mA O C/W Notes: 1. Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 0.2×0.2 inch copper pad area. 2 REV:A Page 1 QW-BB004 Comchip Technology CO., LTD. SMD Schottky Barrier Rectifiers RATING AND CHARACTERISTIC CURVES (CDBB120-G thru CDBB1100-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 100 100 CDBB120-G~140-G 10 F o r w a rd C u rren t(A) R e v e r s e C u r rent(m A) 10 1 O TJ=75 C CDBB160-G 1 CDBB180-G~1100-G 0.1 0.1 O TJ=25 C Pulse width 300μS 4% duty cycle TJ=25 OC 0.01 0.01 0 40 80 120 160 0 200 0.4 0.8 1.6 1.2 Percent of Rated Peak Reverse Voltage (%) Forward Voltage (V) Fig.3 Junction Capacitance Fig.4 Current Derating Curve 1000 2.0 1.4 O 0.8 1 60 0.6 BB 12 0 BB 140 0.4 11 0 -G~ - G~ 0 -G -G Averag e For ward C urre nt (A) 1.0 CD 100 1.2 CD J u n c ti o n C apacian t ce(p F ) TJ=25 C f=1MHz and applied 4VDC reverse voltage 0.2 10 0.1 0 1 10 100 0 25 50 75 100 125 Ambient Temperature ( Reverse Voltage (V) O 150 175 C) Fig.5 Non-repetitive Forward Surge Current P e a k F o r w a r d S u r g e Cur r e n t (A ) 60 O TJ=25 C 8.3ms single half sine wave, JEDEC method 50 40 30 20 10 0 1 10 100 Number of Cycles at 60Hz REV:A Page 2 QW-BB004 Comchip Technology CO., LTD.