COMCHIP Smal l Signal Sch ottky Diodes SMD Diodes Specialist CDBV3-40/S/C/A-G Reverse Voltage: 40 Volts Forward Current: 200 mA RoHS Device Features SOT-323 -Design for mounting on small surface. 0.087(2.20) 0.070(1.80) -High speed switching application, circuit protection. 3 0.054(1.35) 0.045(1.15) -Low turn-on voltage. Mechanical data 1 2 0.056(1.40) 0.047(1.20) -Case: SOT-323, molded plastic. 0.006(0.15) 0.002(0.05) -Terminals: solderable per MIL-STD-750, method 2026. -Approx. weight: 0.006 grams 0.087(2.20) 0.078(2.00) 0.044(1.10) 0.035(0.90) Circuit diagram 3 3 3 3 0.004(0.10)max. 0.016(0.40) 0.008(0.20) 1 2 CDBV3-40-G Marking Code:43 1 2 CDBV3-40S-G Mark Code:44 1 2 1 CDBV3-40C-G Marking Code: 45 0.004(0.10)min. 2 CDBV3-40A-G Marking Code: 46 Dimensions in inches and (millimeter) Maximum Ratings (at Ta=25 C unless otherwise noted) O Parameter Symbol Value Units V RRM V RWM VR 40 V Forward continuous current I FM 200 mA Peak surge forward current (T=1.0sec) I FSM 0.6 A Power dissipation PD 150 mW RθJA 833 Junction temperature TJ 125 O C Storage temperature T STG -65 to +125 O C Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage Thermal resistance, junction to ambient O C/W Electrical Characteristics (at Ta=25 C unless otherwise noted) O Parameter Reverse breakdown voltage Symbol Conditions Min. Max. 40 Units V BR I R =10μA Reverse voltage leakage current IR V R =30V 200 nA Forward voltage VF I F =1mA I F =40mA 380 1000 mV Diode capacitance CD V R =0V, f=1.0MHz 5 pF Reverse recovery time T rr I rr =1mA, I F =I R =10mA, R L =100Ω 5 nS V REV:B Page 1 QW-BA005 Comchip Technology CO., LTD. COMCHIP Smal l Signal Sch ottky Diodes SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBV3-40/S/C/A-G) Fig.1 Forward Characteristics Fig.2 Reverse Characteristics 1000 10000 T A =125 OC 100 Rever s e Curr e nt (nA) F o r w a r d C u r rent ( mA) 1000 T A =125 OC 10 O T A =-40 C O T A =0 C T A =25 OC 1 T A =75 OC 0.1 O T A =75 C 100 10 T A =25 OC 1 T A =-40 C T A =0 OC O 0.1 0 0.2 0.4 0.6 0.8 10 0 1.0 Fig.3 Capacitance Between Terminals Characteristics 40 30 50 Fig.4 Power Derating Curve 5 400 O T J =25 C f=1MHz Mounted on glass epoxy PCBs 4 Power Dissipation (mW) Capac i ta n c e Bet w een Termin a ls (p F ) 20 Reverse Voltage (V) Forward Voltage (V) 3 2 1 300 200 100 0 0 0 10 20 30 40 50 60 70 0 25 50 75 100 125 150 175 Ambient Temperature ( OC) Reverse Voltage (V) REV:B Page 2 QW-BA005 Comchip Technology CO., LTD.