COMCHIP SMD Switching Diodes SMD Diodes Specialist CDSH3-21-G Voltage: 200 Volts Current: 200 mA RoHS Device Features SOT-523 -Fast switching speed. 0.067(1.70) 0.059(1.50) -For general purpose switching applications. 3 -High conductance. 0.033(0.85) 0.030(0.75) Mechanical data 1 -Case: SOT-523, molded plastic. 2 0.008(0.20) 0.004(0.10) 0.043(1.10) 0.035(0.90) -Terminals: Solder plated, solderable per MIL-STD202E, method 208C. 0.069(1.75) 0.057(1.45) 0.031(0.80) 0.024(0.60) -Weight: 0.002 grams approx. Circuit Diagram 0.004(0.10)max. 3 0.012(0.30) 0.006(0.15) 1 0.004(0.10)min. 2 CDSH3-21-G Marking: T3 Dimensions in inches and (millimeter) Maximum Ratings (at TA=25 O C unless otherwise noted) Symbol Parameter Peak repetitive peak reverse voltage V RRM Working peak reverse voltage V RWM Value Unit 200 V DC blocking voltage VR Forward continuous current I FM 400 mA Averaged rectified output current IO 200 mA I FSM 2.5 0.5 A PD 150 Non-repetitive Peak forward surge current @TP=1.0μS @TP=1.0S Power dissipation Thermal resistance, junction to ambient air Operating junction temperature Storage temperature range mW O RθJA 833 TJ 150 O C -65 to +150 O C T STG C/W Electrical Ratings @TA=25 OC unless otherwise noted. Parameter Symbol Conditions Min. Typ. Max. V BR I R =100μA V F1 I F =100mA 1 V V F2 I F =200mA 1.25 V Reverse current IR V R =200V 100 nA Capacitance between terminals CT V R =0V, f=1MHz 5 pF Reverse recovery time T rr I F =I R =30mA, I RR =0.1I R , R L =100Ω 50 nS Reverse breakdown voltage 200 Unit V Forward voltage REV:A Page 1 QW-B0039 Comchip Technology CO., LTD. COMCHIP SMD Switching Diodes SMD Diodes Specialist Rating and Characteristic Curves (CDSH3-21-G) Fig.2 Reverse Characteristics Ι R , Instantaneous Reverse Current (μA) I F , Instantaneous Forward Current (A) Fig.1 Forward Characteristics 1 0.1 O T A =150 C T A =125 OC O T A =25 C O T A =75 C 0.01 T A =0 OC O T A =-40 C 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 100 O T A =150 C 10 T A =125 OC O 1 T A =75 C 0.1 T A =25 OC 0.01 O T A =0 C T A =-40 OC 0.001 0.0001 0 1.4 Fig.3 Capacitance Between Terminals Characteristics 100 150 200 250 Fig.4 Power Derating Curve 3 250 f=1MHz P D , Power Dissipation (mW) C T , Capacitance Between Terminals (pF) 50 V R , Instantaneous Reverse Voltage (V) V F , Instantaneous Forward Voltage (V) 2.5 2 1.5 1 0.5 0 200 150 100 50 0 0 10 20 30 40 0 100 200 T A , Ambient Temperature ( OC) V R , Reverse Voltage (V) REV:A Page 2 QW-B0039 Comchip Technology CO., LTD.