TI LM3212

LM3212
LM3212 PRODUCT BRIEF Step-Down DC-DC Converter with Analog Bypass Mode for
RF Power Amplifiers
Literature Number: SNOSB37A
LM3212 PRODUCT BRIEF
Step-Down DC-DC Converter with Analog Bypass Mode for
RF Power Amplifiers
General Description
Features
The LM3212 is a DC-DC converter optimized for powering
GSM RF power amplifiers (PAs) from a single Lithium-Ion cell;
however, it may also be used in other applications. The
LM3212 steps down an input voltage from 2.7V to 5.5V to a
dynamically adjustable output voltage of 0.5V to 3.4V. The
output voltage is set through a VCON analog input that adjusts the output voltage to ensure efficient operation at all
power levels of the RF PA.
The LM3212 has a unique Active Current Bypass (ACB) feature that speeds up output voltage transition times, provides
extra drive and a low-resistance analog bypass. The LM3212
has an AUTO_BY pin to force the LM3212 into bypass mode
during low input voltage operation, thus overriding the automatic analog bypass feature. Forced bypass can also be
achieved by setting VCON > VIN/2.5.
In addition, the LM3212 offers a fixed-frequency PWM mode
to minimize RF interference and a shutdown mode to turn the
device off and reduce battery consumption to 0.02 μA (typ.).
The LM3212 is available in a 16-bump lead-free micro SMD
package. A 1.6 MHz switching frequency allows use of tiny
surface-mount components for the required inductor and two
ceramic capacitors.
Note: This document is not a full datasheet. For more information regarding this product or to order samples,
please contact your local Texas Instruments sales office
or
visit
http://www.focus.ti.com/general/docs/
dsnsuprt.tsp.
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1.6 MHz (typ.) PWM Switching Frequency
ACB reduces inductor requirements and size
Operates from a single Li-Ion cell (2.7V to 5.5V)
Dynamically Adjustable Output Voltage (0.5V to 3.4V)
2.5A Maximum Load Current
Analog bypass function with low bypass resistance
(33 mΩ typ.)
High Efficiency to 95% with Internal Synchronous
Rectification
16-bump micro SMD Package
Current Overload Protection
Thermal Overload Protection
Applications
■ Battery-Powered 2G/3G/4G RF Power Amplifiers
■ Hand-Held Radios
■ RF PC Cards
Typical Application
30083601
© 2011 Texas Instruments Incorporated
300836
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LM3212 PRODUCT BRIEF
October 26, 2011
LM3212
Physical Dimensions inches (millimeters) unless otherwise noted
16-Bump Thin Micro SMD, Large Bump
X1 = 2200 µm
X2 = 2301 µm
X3 = 600 µm
NS Package Number TLA16JNA
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2
LM3212
Notes
3
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LM3212 PRODUCT BRIEF
Notes
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