LM3212 LM3212 PRODUCT BRIEF Step-Down DC-DC Converter with Analog Bypass Mode for RF Power Amplifiers Literature Number: SNOSB37A LM3212 PRODUCT BRIEF Step-Down DC-DC Converter with Analog Bypass Mode for RF Power Amplifiers General Description Features The LM3212 is a DC-DC converter optimized for powering GSM RF power amplifiers (PAs) from a single Lithium-Ion cell; however, it may also be used in other applications. The LM3212 steps down an input voltage from 2.7V to 5.5V to a dynamically adjustable output voltage of 0.5V to 3.4V. The output voltage is set through a VCON analog input that adjusts the output voltage to ensure efficient operation at all power levels of the RF PA. The LM3212 has a unique Active Current Bypass (ACB) feature that speeds up output voltage transition times, provides extra drive and a low-resistance analog bypass. The LM3212 has an AUTO_BY pin to force the LM3212 into bypass mode during low input voltage operation, thus overriding the automatic analog bypass feature. Forced bypass can also be achieved by setting VCON > VIN/2.5. In addition, the LM3212 offers a fixed-frequency PWM mode to minimize RF interference and a shutdown mode to turn the device off and reduce battery consumption to 0.02 μA (typ.). The LM3212 is available in a 16-bump lead-free micro SMD package. A 1.6 MHz switching frequency allows use of tiny surface-mount components for the required inductor and two ceramic capacitors. Note: This document is not a full datasheet. For more information regarding this product or to order samples, please contact your local Texas Instruments sales office or visit http://www.focus.ti.com/general/docs/ dsnsuprt.tsp. ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1.6 MHz (typ.) PWM Switching Frequency ACB reduces inductor requirements and size Operates from a single Li-Ion cell (2.7V to 5.5V) Dynamically Adjustable Output Voltage (0.5V to 3.4V) 2.5A Maximum Load Current Analog bypass function with low bypass resistance (33 mΩ typ.) High Efficiency to 95% with Internal Synchronous Rectification 16-bump micro SMD Package Current Overload Protection Thermal Overload Protection Applications ■ Battery-Powered 2G/3G/4G RF Power Amplifiers ■ Hand-Held Radios ■ RF PC Cards Typical Application 30083601 © 2011 Texas Instruments Incorporated 300836 www.ti.com LM3212 PRODUCT BRIEF October 26, 2011 LM3212 Physical Dimensions inches (millimeters) unless otherwise noted 16-Bump Thin Micro SMD, Large Bump X1 = 2200 µm X2 = 2301 µm X3 = 600 µm NS Package Number TLA16JNA www.ti.com 2 LM3212 Notes 3 www.ti.com LM3212 PRODUCT BRIEF Notes TI/NATIONAL INTERIM IMPORTANT NOTICE Texas Instruments has purchased National Semiconductor. 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