CYSTEKEC BTD2195L3

Spec. No. : C654L3
Issued Date : 2007.02.09
Revised Date :
Page No. : 1/5
CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTD2195L3
Description
The BTD2195L3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low
speed switching application. Pb-free package process is adopted.
Equivalent Circuit
Outline
BTD2195L3
SOT-223
C
B
C
E
E
C
B:Base
C:Collector
E:Emitter
B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
RθJC
Tj
Tstg
Limits
Unit
130
120
5
4
6 (Note )
5
25
150
-55~+150
V
V
V
A
A
W
°C/W
°C
°C
Note : Single Pulse Pw≦350μs, Duty≦2%.
BTD2195L3
CYStek Product Specification
Spec. No. : C654L3
Issued Date : 2007.02.09
Revised Date :
Page No. : 2/5
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol
BVCEO
BVCBO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
120
140
-
Typ.
-
1000
500
-
-
Max.
100
100
2
2.5
2.3
200
Unit
V
V
μA
μA
mA
V
V
pF
Test Conditions
IC=1mA, IB=0
IC=100μA, IE=0
VCB=100V, IE=0
VCE=100V, IE=0
VEB=5V, IC=0
IC=2A, IB=2mA
VCE=4V, IC=2A
VCE=4V, IC=1A
VCE=4V, IC=2A
VCB=10V, IE=0A, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BTD2195L3
BTD2195L3
Package
SOT-223
(Pb-free)
Shipping
Marking
2500 pcs / Tape & Reel
DP
CYStek Product Specification
Spec. No. : C654L3
Issued Date : 2007.02.09
Revised Date :
Page No. : 3/5
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
10000
10000
Saturation Voltage---(mV)
Current Gain---HFE
VCE = 4V
1000
100
10
1000
100
1
1
10
100
1000
10000
1
Collector Current---IC(mA)
100
1000
10000
Collector Current---I C (mA)
Saturation Voltage vs Collector Current
On voltage vs Collector Current
10000
10000
VBE (SAT)@IC = 250IB
VBE (ON) @VCE = 4V
On voltage---(mV)
Saturation Voltage---(mV)
10
1000
100
1000
100
10
1
10
100
1000
10000
Collector Current---I C (mA)
1
10
100
1000
10000
Collector Current---I C (mA)
Power Derating Curve
Power Dissipation---PD(W)
6
5
4
3
2
1
0
0
50
100
150
200
Ambient Temperature ---TC(℃ )
BTD2195L3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C654L3
Issued Date : 2007.02.09
Revised Date :
Page No. : 4/5
Reel Dimension
Carrier Tape Dimension
BTD2195L3
CYStek Product Specification
Spec. No. : C654L3
Issued Date : 2007.02.09
Revised Date :
Page No. : 5/5
CYStech Electronics Corp.
SOT-223 Dimension
A
Marking:
DP
B
C
1
2
3
D
E
Style: Pin 1.Base 2.Collector 3.Emitter
F
a1
H
I
G
a2
3-Lead SOT-223 Plastic
Surface Mounted Package
CYStek Package Code: L3
*: Typical
Inches
Min.
Max.
0.1142
0.1220
0.2638
0.2874
0.1299
0.1457
0.0236
0.0315
*0.0906
0.2480
0.2638
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
2.90
3.10
6.70
7.30
3.30
3.70
0.60
0.80
*2.30
6.30
6.70
DIM
G
H
I
a1
a2
Inches
Min.
Max.
0.0551
0.0709
0.0098
0.0138
0.0008
0.0039
*13o
0o
10 o
Millimeters
Min.
Max.
1.40
1.80
0.25
0.35
0.02
0.10
*13o
0o
10 o
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2195L3
CYStek Product Specification