CYStech Electronics Corp. Spec. No. : C202S3S Issued Date : 2002.05.11 Revised Date : 2006.08.17 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC4081S3S Description • The BTC4081S3S is designed for using in driver stage of AF amplifier and general purpose amplification. • Low Cob, Typ. Cob=2.0pF • Complementary to BTA1576S3S • Pb-free package Symbol Outline SOT-323 BTC4081S3S B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature BTC4081S3S Symbol Limits Unit VCBO VCEO VEBO IC Pd Tj Tstg 60 50 7 150 225 150 -55~+150 V V V mA mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C202S3S Issued Date : 2002.05.11 Revised Date : 2006.08.17 Page No. : 2/5 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 60 50 7 180 80 - Typ. 0.2 180 2 Max. 0.1 0.1 0.4 560 3.5 Unit V V V μA μA V Test Conditions IC=100μA IC=1mA IE=50μA VCB=60V VEB=7V IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=12V, IC=2mA, f=100MHz VCB=12V, f=1MHz MHz pF *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE Rank Range R 180-390 S 270-560 Ordering Information Device BTC4081S3S BTC4081S3S Package SOT-323 (Pb-free) Shipping Marking 3000 pcs / Tape & Reel 1F CYStek Product Specification Spec. No. : C202S3S Issued Date : 2002.05.11 Revised Date : 2006.08.17 Page No. : 3/5 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 HFE@VCE=6V Current Gain---HFE Saturation Voltage---(mV) VCE(SAT)@IC=10IB 100 100 10 0.1 1 10 100 Collector Current --- IC(mA) 1000 0.1 Saturation Voltage vs Collector Current 1 10 100 Collector Current --- IC(mA) 1000 Cutoff Frequency vs Collector Current 1 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1000 VBE(SAT)@IC=10IB FT@VCE=12V 0.1 100 0.1 1 10 100 Collector Current --- IC(mA) 1000 1 10 100 Collector Current --- IC(mA) Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature ---Ta(℃ ) BTC4081S3S CYStek Product Specification CYStech Electronics Corp. Spec. No. : C202S3S Issued Date : 2002.05.11 Revised Date : 2006.08.17 Page No. : 4/5 Reel Dimension Carrier Tape Dimension BTC4081S3S CYStek Product Specification CYStech Electronics Corp. Spec. No. : C202S3S Issued Date : 2002.05.11 Revised Date : 2006.08.17 Page No. : 5/5 SOT-323 Dimension 3 Marking: A Q A1 1 C Lp 2 TE 1F detail Z bp e1 W B e E D A Z 3-Lead SOT-323 Pastic Surface Mounted Package CYStek Package Code: S3 θ He 0 v A 2 mm 1 Style: Pin 1.Base 2.Emitter 3.Collector scale *: Typical Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - DIM A A1 bp C D E e Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - Inches DIM Min. Max. e1 0.0256 He 0.0787 0.0886 Lp 0.0059 0.0177 Q 0.0051 0.0091 v 0.0079 w 0.0079 θ Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10° 0° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC4081S3S CYStek Product Specification