Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 1/11 CYStech Electronics Corp. N & P-Channel Enhancement Mode Power MOSFET MTC2103BJ4 Features N-CH P-CH BVDSS 30V -30V ID 8A -6A 21mΩ 45mΩ RDSON(MAX) • Low Gate Charge • Simple Drive Requirement • 100% UIS test @ VD=15V, L=0.1mH, VG=10V, IL=7.5A, Rated VDS=30V, for N-CH • 100% UIS test @ VD=15V, L=0.1mH, VG=-10V, IL=-6A, Rated VDS=-30V, for P-CH • RoHS compliant & Halogen-free package Equivalent Circuit Outline MTC2103BJ4 TO-252-4L G:Gate D:Drain S:Source Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS ID Continuous Drain Current @ TC=25°C ID Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 IDM Avalanche Current IAS Avalanche Energy @ L=0.1mH, ID=10A(-10A for P-ch),RG=25Ω EAS Repetitive Avalanche Energy @ L=0.05mH *2 EAR Total Power Dissipation (TC=25℃) Pd Total Power Dissipation (TC=100℃) Operating Junction and Storage Temperature Range Tj, Tstg Note : *1. Pulse width limited by maximum junction temperature Limits N-channel P-channel 30 ±20 8 6 32 15 5 2.5 -30 ±20 -6 -5 -24 -15 5 2.5 25 18 -55~+175 Unit V A mJ W °C *2. Duty cycle ≤ 1% MTC2103BJ4 CYStek Product Specification Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 2/11 CYStech Electronics Corp. Thermal Data Parameter Symbol Thermal Resistance, Junction-to-case, max Rth,j-c Thermal Resistance, Junction-to-ambient, max * 1 Rth,j-a 2 Note : *1 62.5°C/W when mounted on a 1 in pad of 2 oz copper. Value 6 90 Unit °C/W °C/W N-CH Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS ID(ON) *1 RDS(ON) *1 Dynamic Qg(VGS=10V)*1 Qg(VGS=4.5V)*1 Qgs *1 Qgd *1 td(ON) *1 tr *1 td(OFF) *1 tf *1 Ciss Coss Crss Source-Drain Diode IS *1 ISM *2 VSD *1 trr *1 Qrr *1 Min. Typ. Max. Unit Test Conditions 30 1 8 - 1.5 16 18 34 3 ±100 1 25 21 42 V V S nA μA μA A mΩ mΩ VGS=0, ID=250μA VDS =VGS, ID=250μA VDS =5V, ID=8A VGS=±20, VDS=0 VDS =24V, VGS =0 VDS =20V, VGS =0, Tj=125°C VDS =10V, VGS =10V VGS =10V, ID=8A VGS =4.5V, ID=6A - 11 6 1.2 3.3 11 16 36 20 1115 116 82 - - 50 2 2.3 9.2 1.2 - nC ID=8A, VDS=15V, VGS=10V ns VDS=15V, ID=1A, VGS=10V, RG=6Ω pF VGS=0V, VDS=15V, f=1MHz A V ns nC IF=IS, VGS=0V IF=IS, VGS=0, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Pulse width limited by maximum junction temperature. MTC2103BJ4 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 3/11 P-CH Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS ID(ON) *1 RDS(ON) *1 Dynamic Qg(VGS=-10V)*1 Qg(VGS=-4.5V)*1 Qgs *1 Qgd *1 td(ON) *1 tr *1 td(OFF) *1 tf *1 Ciss Coss Crss Source-Drain Diode IS *1 ISM *2 VSD *1 trr *1 Qrr *1 Min. Typ. Max. Unit Test Conditions -30 -1 -6 - -1.5 16 36 60 -3 ±100 -1 -25 45 76 V V S nA μA μA A mΩ mΩ VGS=0, ID=-250μA VDS =VGS, ID=-250μA VDS =-5V, ID=-6A VGS=±20, VDS=0 VDS =-24V, VGS =0 VDS =-20V, VGS =0, Tj=125°C VDS =-5V, VGS =-10V VGS =-10V, ID=-6A VGS =-4.5V, ID=-5A - 10 7.2 2.2 2 5.5 10 28 15 1320 500 460 - nC ID=-6A, VDS=-15V, VGS=-10V ns VDS=-15V, ID=-1A, VGS=-10V, RG=6Ω pF VGS=0V, VDS=-15V, f=1MHz - 55 2.2 -2.3 -9.2 -1.2 - A V ns nC IF=IS, VGS=0V IF=IS, VGS=0, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Pulse width limited by maximum junction temperature. Ordering Information Device MTC2103BJ4 MTC2103BJ4 Package TO-252 (RoHS compliant & Halogen-free package) Shipping Marking 2500 pcs / Tape & Reel 2103 CYStek Product Specification Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 4/11 CYStech Electronics Corp. Characteristic Curves N-Channel On-Resistance Variation with Drain Current and Gate Voltage On-Region Characteristics 30 V = 10V 6V 7V 2.4 GS 25 2.2 5V VGS = 3.5 V 20 RDS(ON) -Normalized Drain-Source On-Resistance ID - Drain Current(A) 2.0 4.5V 15 4V 10 5 3.5V 1.6 4.5 V 5.0 V 1.4 6.0 V 1.2 7.0 V 1.0 0 1.9 1 4 2 3 VDS - Drain Source Voltage(V) 6 0 5 On-Resistance Variation with Temperature 0.09 I D = 8A VGS = 10V 12 18 ID - Drain Current(A) RDS(ON) - On-Resistance( Ω ) 1.3 1.0 0.7 0.07 0.06 0.05 0.04 TA = 125°C 0.03 TA = 25°C 0.01 -25 75 0 25 50 TJ - Junction Temperature (° C) 100 125 150 VDS = 10V 10 VGS = 0V Is - Reverse Drain Current( A ) 25° C TA = -55° C 15 125°C 10 5 0 MTC2103BJ4 6 8 VGS- Gate-Source Voltage( V ) Body Diode Forward Voltage Variation with Source Current and Temperature 100 25 1 4 2 Transfer Characteristics 30 20 30 ID = 4 A 0.08 1.6 0.4 -50 24 On-Resistance Variation with Gate-to-Source Voltage 0.02 ID - Drain Current(A) 10 V 0.8 0 RDS(on) - Normalized Drain-Source On-Resistance 4.0 V 1.8 1.5 2.5 2.0 VGS - Gate-Source Voltage( V ) 3.0 3.5 TA = 125°C 10 25° C 1 -55° C 0.1 0.01 0.001 0 0.2 0.6 0.8 1.0 0.4 VSD - Body Diode Forward Voltage( V ) 1.2 1.4 CYStek Product Specification Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 5/11 CYStech Electronics Corp. Characteristic Curves(Cont.) Gate Charge Characteristics 10 f = 1MHz VGS = 0 V 1350 VDS = 5V 10V 8 1200 Ciss 1050 15V Capacitance(pF) VGS - Gate-Source Voltage( V ) ID = 8A Capacitance Characteristics 1500 6 4 900 750 600 450 300 2 Coss Crss 150 0 0 4 8 Q g - Gate Charge( nC ) 0 12 0 16 Maximum Safe Operating Area 100 50 5 15 10 VDS - Drain-Source Voltage( V ) P( pk ),Peak Transient Power( W ) ID - Drain Current( A ) 10 1ms 10ms 100ms 1 1s 10s DC VGS= 10V 0.1 Single Pulse RθJA= 90°C/ W TA = 25°C 0.01 0.1 1 10 VDS - Drain-Source Voltage( V ) 30 Single Pulse RθJA = 90°C/ W TA = 25°C 40 30 20 10 0 0.001 100 25 Single Pulse Maximum Power Dissipation RDS(ON) Limit 100μs 20 0.01 0.1 1 10 100 1000 Transient Thermal Response Curve 1 r( t ),Normalized Effective Transient Thermal Resistance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: 0.02 PDM 0.01 t1 0.01 t2 1.Duty Cycle,D = t1 t2 Single Pulse 2.RθJA =90°C/ W 3.TJ - TA = P * RθJA (t) 4.R JA (t)=r(t) + RθJA θ 0.001 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 t 1 ,Time (sec) MTC2103BJ4 CYStek Product Specification Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 6/11 CYStech Electronics Corp. Characteristic Curves(Cont.) P-Channel Typical Output Characteristics VGS = -10V On-Resistance Variation with Drain Current and Gate Voltage 2.4 -6.0V -5.0V -4.5V -4.0V -I DDrain Current( A ) 20 15 -3.5V 10 -3.0V 5 3 2 1 -VDS Drain-Source Voltage( V) 4 5 2.2 VGS = -4V 2.0 -4.5V 1.8 -6.0V 1.6 -7.0V 1.4 -8.0V 1.2 -10V 1.0 0.8 0 15 10 -ID Drain Current( A) 5 20 25 On-Resistance Variation with Gate-Source Voltage On-ResistanceVariationwithTemperature 0.12 1.6 ID =-6A VGS=-10V ID= -3A 1.4 0.09 RDS(on) - On-Resistance(Ω) RDS(ON) Normalized Drain-Source On-Resistance 0 0 RDS(ON) - Normalized Drain-Source On-Resistance 25 1.2 1.0 0.8 -25 0 25 50 75 100 125 TA = 25°C 0.03 0 0.6 -50 TA = 125°C 0.06 150 2 4 8 6 -VGS Gate-Source Voltage(V) 10 ° C) Tj -JunctionTemperature( Body Diode Forward Voltage Variation with Source Current and Temperature Transfer Characteristics 15 VDS= -5.0V VSD =0V 10 12 125°C -IS -Reverse Drain Current( A ) -I D -Drain Current( A ) 100 25°C TA = -55°C 9 6 3 0 1 MTC2103BJ4 2 3 -VGS ,Gate-Source Voltage 4 5 1 0.1 TA = 125°C 25°C -55°C 0.01 0.001 0.0001 0 0.2 0.8 0.4 0.6 -VSD - Body Diode Forward Voltage( V) 1.0 1.2 1.4 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 7/11 Characteristic Curves(Cont.) Gate Charge Characteristics 10 ID =-6A Ciss 1200 -10V -VGS ,Gate-Source Voltage( V ) f = 1MHZ VGS = 0V 1400 -15V 8 1000 Capacitance( pF ) 6 4 800 600 Coss 400 Crss 2 200 0 0 0 4 6 Qg ,Gate Charge( nC) 2 8 0 12 10 5 Maximum Safe Operating Area 100 15 20 10 -VDS Drain-Source Voltage( V) 100μs 10 s 1 10m s 100m s 1s SINGLEPULSE R JA = 90°C/W TA = 25°C θ 25 1ms 20 Power( W ) 10 30 25 Single Pulse Maximum Power Dissipation 30 RDS(ON)Limit -ID ,Drain Current( A ) Capacitance Characteristics 1600 VDS =-5V DC 15 10 0.1 VGS = -10V SINGLEPULSE RθJA = 90°C/W 0.01 TA = 25°C 0.1 5 1 10 -VDS ,Drain-Source Voltage( V ) 0 0.01 100 0.1 1 Single Pulse Time( sec ) 10 100 300 Transient Thermal Response Curve 1 r ( t ) ,Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 R JA R JA (t)= r(t) R JA = 90 C/W P(pk) t1 t2 SINGLE PULSE 0.001 0.0001 MTC2103BJ4 Tj - TA = P R JA (t) Duty Cycle,D= t 1 / t 2 0.001 0.01 0.1 t1 , Time( ms ) 1 10 100 1000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 8/11 Reel Dimension Carrier Tape Dimension MTC2103BJ4 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 9/11 Recommended soldering footprint Unit : mm MTC2103BJ4 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 10/11 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTC2103BJ4 CYStek Product Specification Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 11/11 CYStech Electronics Corp. TO-252 Dimension Marking: Tab Device Name Date code 2103 □□□□ Style: Pin 1.Soure 1 2.Gate 1 3.&Tab Drain 1& Drain 2 4. Source 2 5. Gate 2 4-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J4 Inches Min. Max. 0.0826 0.0984 0.0433 0.0512 0.0118 0.0276 0.0217 0.0295 0.0157 0.0315 0.157 0.0236 0.2087 0.2244 0.2638 0.2874 0.0866 0.1181 DIM A A1 B B1 B2 C D D2 D3 Millimeters Min. Max. 2.10 2.50 1.10 1.30 0.30 0.70 0.55 0.75 0.40 0.80 0.40 0.60 5.30 5.70 6.70 7.30 2.20 3.00 DIM E E2 H L L1 L2 L3 P Inches Min. Max. 0.2480 0.2638 0.1890 0.2146 0.3622 0.3996 0.0512 0.0669 0.0354 0.0590 0.0197 0.0433 0.0000 0.0118 0.0461 0.0539 Millimeters Min. Max. 6.30 6.70 4.80 5.45 9.20 10.15 1.30 1.70 0.90 1.50 0.50 1.10 0.00 0.30 1.17 1.37 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : KFC; Pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTC2103BJ4 CYStek Product Specification