MTC3586DFA6

CYStech Electronics Corp.
Spec. No. : C835DFA6
Issued Date : 2013.06.03
Revised Date : 2013.10.30
Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTC3586DFA6
BVDSS
ID
RDSON(TYP.)
Description
N-CH
20V
5A(VGS=4.5V)
27mΩ(VGS=4.5V)
37mΩ(VGS=2.5V)
82mΩ(VGS=1.5V)
P-CH
-20V
-3.3A(VGS=-4.5 V)
78mΩ(VGS=-4.5V)
115mΩ(VGS=-2.5V)
280mΩ(VGS=-1.5V)
The MTC3586DFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
DFN2*2-6L package, providing the designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
The DFN2*2-6L package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTC3586DFA6
DFN2×2-6L
G：Gate S：Source D：Drain
Ordering Information
Device
MTC3586DFA6-0-T1-G
Package
DFN2×2-6L
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTC3586DFA6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C835DFA6
Issued Date : 2013.06.03
Revised Date : 2013.10.30
Page No. : 2/13
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C (Note 1)
Continuous Drain Current @TA=70 °C (Note 1)
Pulsed Drain Current (Note 2)
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction and Storage Temperature
BVDSS
VGS
ID
ID
IDM
Pd
Tj, Tstg
Limits
N-channel P-channel
20
-20
±12
±12
5
-3.3
4
-2.6
20
-20
1.38
0.01
-55~+150
Unit
V
V
A
A
A
W
W / °C
°C
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec
2.Pulse width limited by maximum junction temperature
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
20
0.5
-
0.02
0.7
27
37
82
7
1.2
±100
1
10
40
50
105
-
V
V/°C
V
nA
423
50
48
6
8
11
10
6
0.8
2.5
-
0.77
16
8
1.2
-
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Source-Drain Diode
*VSD
*trr
*Qrr
-
Test Conditions
S
VGS=0, ID=250μA
Reference to 25°C, ID=1mA
VDS=VGS, ID=250μA
VGS=±12V, VDS=0
VDS=20V, VGS=0
VDS=16V, VGS=0, Tj=70°C
ID=3.5A, VGS=4.5V
ID=1.2A, VGS=2.5V
ID=0.5A, VGS=1.5V
VDS=5V, ID=3A
pF
VDS=20V, VGS=0, f=1MHz
ns
VDS=15V, ID=1A,
VGS=5V, RG=3.3Ω, RD=15Ω
nC
VDS=16V, ID=3A, VGS=4.5V
V
ns
nC
VGS=0V, IS=1.2A
μA
mΩ
IS=3A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTC3586DFA6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C835DFA6
Issued Date : 2013.06.03
Revised Date : 2013.10.30
Page No. : 3/13
P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
Min.
Typ.
Max.
Unit
-20
-
-0.01
-0.8
78
115
280
5
-1.2
±100
-1
-25
105
150
350
-
V
V/°C
V
nA
429
45
41
6
17
16
5
6
0.8
2.4
-
-0.82
20
15
-1.2
-
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Source-Drain Diode
*VSD
*trr
*Qrr
-
Test Conditions
S
VGS=0, ID=-250μA
Reference to 25°C, ID=-1mA
VDS=VGS, ID=-250μA
VGS=±12V, VDS=0
VDS=-20V, VGS=0
VDS=-16V, VGS=0, Tj=70°C
ID=-2.5A, VGS=-4.5V
ID=-2A, VGS=-2.5V
ID=-0.5A, VGS=-1.5V
VDS=-5V, ID=-2A
pF
VDS=-20V, VGS=0, f=1MHz
ns
VDS=-10V, ID=-1A,
VGS=-10V, RG=3.3Ω, RD=10Ω
nC
VDS=-16V, ID=-2A, VGS=-4.5V
V
ns
nC
VGS=0V, IS=-1.2A
μA
mΩ
IS=-2A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
80
90 (Note )
Note :.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 195°C/W when mounted on minimum copper pad
MTC3586DFA6
Unit
°C/W
°C/W
CYStek Product Specification
Spec. No. : C835DFA6
Issued Date : 2013.06.03
Revised Date : 2013.10.30
Page No. : 4/13
CYStech Electronics Corp.
N-channel Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
20
BVDSS, Normalized Drain-Source
Breakdown Voltage
4.5V, 3.5V, 3V, 2.5V
ID, Drain Current(A)
16
VGS=2V
12
8
VGS=1.5V
4
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
0.4
0
0
1
2
3
4
-75
5
-50
-25
VDS , Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
50
75
100 125 150 175
1.2
VGS=1.5V
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
25
Reverse Drain Current vs Source-Drain Voltage
1000
VGS=2.5V
100
VGS=2.5V
VGS=4.5V
0.01
0.1
1
10
ID, Drain Current(A)
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0
100
1
2
3
4
IDR , Reverse Drain Current(A)
5
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
1.8
180
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0
Tj, Junction Temperature(°C)
ID=3.5A
160
140
120
100
80
60
40
20
VGS=4.5V, ID=3.5A
1.6
1.4
1.2
1
0.8
RDS(ON) @Tj=25°C :27mΩ
0.6
0.4
0
0
MTC3586DFA6
1
2
3
4
VGS, Gate-Source Voltage(V)
5
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C835DFA6
Issued Date : 2013.06.03
Revised Date : 2013.10.30
Page No. : 5/13
CYStech Electronics Corp.
N-channel Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), NormalizedThreshold Voltage
Capacitance---(pF)
1000
Ciss
100
C oss
Crss
1.6
ID=250μA
1.4
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60 -40 -20
100
60 80 100 120 140 160
Gate Charge Characteristics
50
10
VGS, Gate-Source Voltage(V)
TJ(MAX) =150°C
TA=25°C
θJA=90°C/W
40
Power (W)
20 40
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
30
20
10
0
0.001
8
VDS=16V
6
VDS=10V
4
2
ID=3A
0
0.01
0.1
1
Pulse Width(s)
10
0
100
ID, Maximum Drain Current(A)
100μs
RDS(ON)
Limited
1
10ms
100ms
0.01
0.01
TA=25°C, Tj=150°C,
VGS=10V, RθJA=90°C/W
Single Pulse
DC
8
10
12
4.5
4
3.5
3
2.5
2
1.5
1
TA=25°C, VGS=10V, RθJA=90°C/W
0.5
0
0.1
1
10
VDS, Drain-Source Voltage(V)
MTC3586DFA6
6
5
1ms
0.1
4
Maximum Drain Current vs JunctionTemperature
100
10
2
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
ID, Drain Current(A)
0
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C835DFA6
Issued Date : 2013.06.03
Revised Date : 2013.10.30
Page No. : 6/13
N-channel Typical Characteristics(Cont.)
Transient Thermal Response Curves
1
Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TA=PDM*ZθJA(t)
4.RθJA=9 0°C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTC3586DFA6
CYStek Product Specification
Spec. No. : C835DFA6
Issued Date : 2013.06.03
Revised Date : 2013.10.30
Page No. : 7/13
CYStech Electronics Corp.
P-channel Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.6
20
-VGS=4V
16
-ID, Drain Current (A)
-BVDSS, Normalized Drain-Source
Breakdown Voltage
-VGS=5V
12
-VGS=3V
8
-VGS=2V
4
1.4
1.2
1
0.8
ID=-250μA,
VGS=0V
0.6
-VGS=1V
0.4
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=-1.5V
-VSD, Source-Drain Voltage(V)
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
1000
100
VGS=-2V
VGS=-2.5V
VGS=-4.5V
Tj=25°C
VGS=0V
1
0.8
Tj=150°C
0.6
0.4
0.2
10
0.01
0.1
1
-ID, Drain Current(A)
0
10
2
4
6
8
-IDR, Reverse Drain Current (A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
300
1.6
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-2.5A
250
200
150
100
50
VGS=-4.5V, ID=-2.5A
1.4
1.2
1
0.8
0.6
RDS(ON) @Tj=25°C : 79mΩ
0.4
0
0
MTC3586DFA6
1
2
3
4
-VGS, Gate-Source Voltage(V)
5
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C835DFA6
Issued Date : 2013.06.03
Revised Date : 2013.10.30
Page No. : 8/13
P-channel Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) ,Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
100
C oss
Crss
1.4
ID=-250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60 -40 -20
100
0
20 40
60 80 100 120 140 160
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
Gate Charge Characteristics
50
10
Power (W)
-VGS, Gate-Source Voltage(V)
ID=-2A
40
TJ(MAX) =150°C
TA=25°C
θJA=90°C/W
30
20
10
0
0.001
8
6
VDS=-10V
4
VDS=-16V
2
0
0.01
0.1
1
Pulse Width(s)
10
0
100
Maximum Safe Operating Area
4
6
8
Qg, Total Gate Charge(nC)
10
12
Maximum Drain Current vs JunctionTemperature
100
3.5
RDS(ON)
Limited
10
-ID, Maximum Drain Current(A)
-ID, Drain Current (A)
2
100μs
1ms
1
10ms
100ms
0.1
TA=25°C, Tj=150°C,
VGS=-10V, RθJA=90°C/W
Single Pulse
DC
3
2.5
2
1.5
1
TA=25°C, VGS=-10V, RθJA=90°C/W
0.5
0
0.01
0.01
MTC3586DFA6
0.1
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
Spec. No. : C835DFA6
Issued Date : 2013.06.03
Revised Date : 2013.10.30
Page No. : 9/13
CYStech Electronics Corp.
P-channel Typical Characteristics(Cont.)
Transient Thermal Response Curves
1
Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TA=PDM*ZθJA(t)
4.RθJA=90 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, Square Wave Pulse Duration(s)
Recommended Soldering Footprint
MTC3586DFA6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C835DFA6
Issued Date : 2013.06.03
Revised Date : 2013.10.30
Page No. : 10/13
Reel Dimension
MTC3586DFA6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C835DFA6
Issued Date : 2013.06.03
Revised Date : 2013.10.30
Page No. : 11/13
Carrier Tape Dimension
MTC3586DFA6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C835DFA6
Issued Date : 2013.06.03
Revised Date : 2013.10.30
Page No. : 12/13
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTC3586DFA6
CYStek Product Specification
Spec. No. : C835DFA6
Issued Date : 2013.06.03
Revised Date : 2013.10.30
Page No. : 13/13
CYStech Electronics Corp.
DFN2×2-6L Dimension
Marking:
D1
G2
S2
Device Name
3586
Date Code
□□□□
MTC4512
●
S1
Style:
Pin 1. Source1(S1)
Pin 2. Gate 1 (G1)
Pin 3. Drain2 (D2)
Pin 4. Source2 (S2)
Pin 5. Gate2 (G2)
Pin 6. Drain1 (D1)
Millimeters
Min.
Max.
0.700
0.900
0.000
0.050
0.203 REF
1.950
2.050
1.950
2.050
0.570
0.770
DIM
A
A1
A3
D
E
D1
Inches
Min.
Max.
0.028
0.035
0.000
0.002
0.008 REF
0.077
0.081
0.077
0.081
0.022
0.030
DIM
E1
k
b
e
L
G1
D2
6-Lead DFN2×2-6L Plastic
Surface Mounted Package
CYStek Package Code: DFA6
Millimeters
Min.
Max.
0.900
1.100
0.200
0.250
0.350
0.650 TYP
0.200
0.300
Inches
Min.
Max.
0.035
0.043
0.008
0.010
0.014
0.026 TYP
0.008
0.012
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead :Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTC3586DFA6
CYStek Product Specification