CYSTEKEC MTN2310M3

CYStech Electronics Corp.
Spec. No. : C393M3
Issued Date : 2007.05.28
Revised Date :
Page No. : 1/6
60V N-CHANNEL Enhancement Mode MOSFET
MTN2310M3
Features
• VDS=60V
RDS(ON)=90mΩ(max.)@VGS=10V, IDS=3A
RDS(ON)=120mΩ(max.)@VGS=4.5V, IDS=2A
• Simple drive requirement
• Small package outline
Symbol
Outline
MTN2310M3
SOT-89
DG D S
G:Gate
S:Source
D:Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C (Note 3)
Continuous Drain Current @ TA=70°C (Note 3)
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation@ TA=25℃
Linear Derating Factor
Operating Junction Temperature
Storage Temperature
Symbol
VDS
VGS
IDM
PD
Limits
60
±20
3.0
2.3
10
1.5
Unit
V
V
A
A
A
W
Tj
Tstg
0.01
-55~+150
-55~+150
W/°C
°C
°C
ID
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on FR-4 board, t≤10sec.
MTN2310M3
CYStek Product Specification
Spec. No. : C393M3
Issued Date : 2007.05.28
Revised Date :
Page No. : 2/6
CYStech Electronics Corp.
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient(PCB mounted)
Symbol
Limit
Unit
Rth,ja
83.3
°C/W
Note : Surface mounted on FR-4 board, t≦10sec.
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
*VSD
Trr
Qrr
Min.
Typ.
Max.
Unit
60
1.0
-
0.05
5
3.0
±100
10
25
90
120
-
V
V/°C
V
nA
μA
μA
-
490
55
40
6
5
16
3
6
1.6
3
780
10
-
-
25
26
1.2
-
Test Conditions
S
VGS=0, ID=250μA
Reference to 25°C, ID=1mA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=60V, VGS=0
VDS=48V, VGS=0 (Tj=70°C)
ID=3A, VGS=10V
ID=2A, VGS=4.5V
VDS=5V, ID=3A
pF
VDS=25V, VGS=0, f=1MHz
ns
VDS=30V, ID=1A, RD=30Ω
VGS=10V, RG=3.3Ω
nC
VDS=48V, ID=3A,
VGS=4.5V,
mΩ
V
ns
nC
VGS=0V, IS=1.2A
VGS=0V, IS=3A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN2310M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C393M3
Issued Date : 2007.05.28
Revised Date :
Page No. : 3/6
Characteristic Curves
MTN2310M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C393M3
Issued Date : 2007.05.28
Revised Date :
Page No. : 4/6
Characteristic Curves(Cont.)
MTN2310M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C393M3
Issued Date : 2007.05.28
Revised Date :
Page No. : 5/6
Reel Dimension
Carrier Tape Dimension
MTN2310M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C393M3
Issued Date : 2007.05.28
Revised Date :
Page No. : 6/6
SOT-89 Dimension
Marking:
A
2
1
3
2310
H
C
D
B
Style: Pin 1. Gate 2. Drain 3. Source
E
I
F
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
G
*: Typical
DIM
A
B
C
D
E
Inches
Min.
Max.
0.1732 0.1811
0.1594 0.1673
0.0591 0.0663
0.0945 0.1024
0.01417 0.0201
Millimeters
Min.
Max.
4.40
4.60
4.05
4.25
1.50
1.70
2.40
2.60
0.36
0.51
DIM
F
G
H
I
Inches
Min.
Max.
0.0583 0.0598
0.1165 0.1197
0.0551 0.0630
0.0138 0.0161
Millimeters
Min.
Max.
1.48
1.527
2.96
3.04
1.40
1.60
0.35
0.41
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN2310M3
CYStek Product Specification