Spec. No. : C323N3 Issued Date : 2004.04.05 Revised Date : 2004.10.22 Page No. : 1/5 CYStech Electronics Corp. . . 20V N-CHANNEL Enhancement Mode MOSFET MTN2302N3 Features • VDS=20V RDS(ON)=65mΩ@VGS=4.5V, IDS=3.6A RDS(ON)=95mΩ@VGS=2.5V, IDS=3.1A • Advanced trench process technology • High density cell design for ultra low on resistance • Excellent thermal and electrical capabilities • Compact and low profile SOT-23 package Equivalent Circuit Outline MTN2302N3 SOT-23 D S G G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta=25℃ Ta=75℃ Operating Junction Temperature Storage Temperature MTN2302N3 Symbol Limits Unit VDS VGS ID IDM 20 ±8 2.4 10 1.25 V V A A PD Tj Tstg 0.8 -55~+150 -55~+150 W °C °C CYStek Product Specification Spec. No. : C323N3 Issued Date : 2004.04.05 Revised Date : 2004.10.22 Page No. : 2/5 CYStech Electronics Corp. . . Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) Lead Temperature, for 5 second Soldering(1/8” from case) Symbol Limit Unit Rth,ja TL 100 260 °C/W °C Note : Surface mounted on FR-4 board, t≦5sec. Electrical Characteristics (Ta=25°C) Symbol Static BVDSS VGS(th) IGSS/F IGSS/R IDSS *ID(ON) *RDS(ON) Min. Typ. Max. Unit 20 0.45 6 - 50 75 10 100 -100 1 65 95 - V V nA nA µA A 450 70 43 7 55 16 10 5.2 0.65 1.5 15 80 60 25 10 - 0.75 1.6 1.2 *GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Source-Drain Diode ISD VSD - Test Conditions S VGS=0, ID=250µA VDS=VGS, ID=250µA VGS=+8V, VDS=0 VGS=-8V, VDS=0 VDS=20V, VGS=0 VDS=5V, VGS=4.5V ID=3.6A, VGS=4.5V ID=3.1A, VGS=2.5V VDS=5V, ID=3.6A pF VDS=10V, VGS=0, f=1MHz ns VDD=10V, ID=1A, RL=10Ω VGEN=4.5V, RG=6Ω nC VDS=10V, ID=3.6A, VGS=4.5V, A V VGS=0V, ISD=1A mΩ *Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2% MTN2302N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C323N3 Issued Date : 2004.04.05 Revised Date : 2004.10.22 Page No. : 3/5 . . Characteristic Curves MTN2302N3 CYStek Product Specification CYStech Electronics Corp. MTN2302N3 Spec. No. : C323N3 Issued Date : 2004.04.05 Revised Date : 2004.10.22 Page No. : 4/5 . . CYStek Product Specification CYStech Electronics Corp. Spec. No. : C323N3 Issued Date : 2004.04.05 Revised Date : 2004.10.22 Page No. : 5/5 . . SOT-23 Dimension Marking: A L 3 B TE 02 S 2 1 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 G V Style: Pin 1.Gate 2.Source 3.Drain C D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN2302N3 CYStek Product Specification