PN2907 / PN2907A PN2907 / PN2907A Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-Schalttransistoren PNP PNP Version 2006-09-12 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) PN2907 (2N2907) PN2907A (2N2907A) 40 V 60 V Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCEO Collector-Base-voltage – Kollektor-Basis-Spannung E open - VCBO 60 V Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEBO 5V Power dissipation – Verlustleistung Ptot 625 mW 1) Collector current – Kollektorstrom (dc) - IC 600 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. 2 DC current gain – Kollektor-Basis-Stromverhältnis ) - IC = 0.1 mA, - VCE = 10 V PN2907 PN2907A hFE hFE 35 75 – – – – - IC = 1 mA, - VCE = 10 V PN2907 PN2907A hFE hFE 50 100 – – – – - IC = 10 mA, - VCE = 10 V PN2907 PN2907A hFE hFE 75 100 – – – – - IC = 500 mA, - VCE = 10 V PN2907 PN2907A hFE hFE 30 50 – – – – hFE 100 – 300 – – – – 0.4 V 1.6 V - IC = 150 mA, - VCE = 10 V 2 Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung ) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA 1 2 - VCEsat - VCEsat Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 PN2907 / PN2907A Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. - VBEsat - VBEsat – – – – 1.3 V 2.6 V Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 50 V, (E open) PN2907 PN2907A - ICBO - ICBO – – – – 20 nA 10 nA - VCB = 50 V, Tj = 125°C, (E open) PN2907 PN2907A - ICBO - ICBO – – – – 20 µA 10 µA fT 200 MHz – – CCBO – – 8 pF CEBO – – 30 pf ton – – 45 ns td – – 10 ns tr – – 40 ns toff – – 100 ns ts – – 80 ns tf – – 30 ns Gain-Bandwidth Product – Transitfrequenz - VCE = 20 V, - IC = 50 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 2 V, IC = ic = 0, f = 1 MHz Switching times – Schaltzeiten (between 10% and 90% levels) turn on delay time rise time turn off storage time fall time - VCC = 30 V, - VBE = 1.5 V - IC = 150 mA, - IB1 = 15mA - VCC = 30 V, - IC = 150 mA, - IB1 = - IB2 = 15 mA Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren 2 1 2 RthA < 200 K/W 1) PN2222 / PN2222A Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG