DIOTEC BSP33

BSP 30 ... BSP 33
Switching Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
Power dissipation – Verlustleistung
±0.2
6.5
±0.1
3
1.65
2.3
2
±0.2
3.5
±0.3
7
0.7
1.3 W
Plastic case
Kunststoffgehäuse
4
1
PNP
3
3.25
Dimensions / Maße in mm
1 = B 2, 4 = C 3 = E
SOT-223
Weight approx. – Gewicht ca.
0.04 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BSP 30
BSP 31
BSP 32
BSP 33
Collector-Emitter-voltage
B open
- VCE0
60 V
80 V
Collector-Base-voltage
E open
- VCB0
70 V
90 V
Emitter-Base-voltage
C open
- VEB0
5V
Power dissipation – Verlustleistung
Ptot
1.3 W 1)
Collector current – Kollektorstrom (dc)
- IC
1A
Peak Collector current – Koll.-Spitzenstrom
- ICM
2A
Peak Base current – Basis-Spitzenstrom
- IBM
200 mA
Junction temp. – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 60 V
- ICB0
–
–
100 nA
IE = 0, - VCB = 60 V, Tj = 150/C
- ICB0
–
–
50 :A
- IEB0
–
–
100 nA
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 5 V
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
1
- IC = 150 mA, - IB = 15 mA
- VCEsat
–
–
250 mV
- IC = 500 mA, - IB = 50 mA
- VCEsat
–
–
500 mV
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2
01.11.2003
Switching Transistors
BSP 30 ... BSP 33
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 150 mA, - IB = 15 mA
- VBEsat
–
–
1V
- IC = 500 mA, - IB = 50 mA
- VBEsat
–
–
1.2 V
hFE
10
–
–
hFE
40
–
120
hFE
30
–
–
hFE
30
–
–
hFE
100
–
300
hFE
50
–
–
fT
100 MHz
–
–
–
20 pF
–
CEB0
–
120 pF
–
ton
–
–
500 ns
toff
–
–
600 ns
DC current gain – Kollektor-Basis-Stromverhältnis 1)
- VCE = 5 V, - IC = 100 :A
- VCE = 5 V, - IC = 100 mA
- VCE = 5 V, - IC = 500 mA
- VCE = 5 V, - IC = 100 :A
- VCE = 5 V, - IC = 100 mA
- VCE = 5 V, - IC = 500 mA
BSP 30
BSP 32
BSP 31
BSP 33
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Switching times – Schaltzeiten
turn-on time
turn-off time
- ICon = 100 mA,
- IBon = 5 mA, IBoff = 5 mA
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft
RthA
93 K/W 2)
junction to soldering point – Sperrschicht zu Lötpad
RthS
12 K/W
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BSP 40, BSP 41, BSP 42, BSP 43
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
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