BSP 30 ... BSP 33 Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung ±0.2 6.5 ±0.1 3 1.65 2.3 2 ±0.2 3.5 ±0.3 7 0.7 1.3 W Plastic case Kunststoffgehäuse 4 1 PNP 3 3.25 Dimensions / Maße in mm 1 = B 2, 4 = C 3 = E SOT-223 Weight approx. – Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BSP 30 BSP 31 BSP 32 BSP 33 Collector-Emitter-voltage B open - VCE0 60 V 80 V Collector-Base-voltage E open - VCB0 70 V 90 V Emitter-Base-voltage C open - VEB0 5V Power dissipation – Verlustleistung Ptot 1.3 W 1) Collector current – Kollektorstrom (dc) - IC 1A Peak Collector current – Koll.-Spitzenstrom - ICM 2A Peak Base current – Basis-Spitzenstrom - IBM 200 mA Junction temp. – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 60 V - ICB0 – – 100 nA IE = 0, - VCB = 60 V, Tj = 150/C - ICB0 – – 50 :A - IEB0 – – 100 nA Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 5 V Collector saturation volt. – Kollektor-Sättigungsspg. 2) 1 - IC = 150 mA, - IB = 15 mA - VCEsat – – 250 mV - IC = 500 mA, - IB = 50 mA - VCEsat – – 500 mV ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 2 01.11.2003 Switching Transistors BSP 30 ... BSP 33 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Base saturation voltage – Basis-Sättigungsspannung 1) - IC = 150 mA, - IB = 15 mA - VBEsat – – 1V - IC = 500 mA, - IB = 50 mA - VBEsat – – 1.2 V hFE 10 – – hFE 40 – 120 hFE 30 – – hFE 30 – – hFE 100 – 300 hFE 50 – – fT 100 MHz – – – 20 pF – CEB0 – 120 pF – ton – – 500 ns toff – – 600 ns DC current gain – Kollektor-Basis-Stromverhältnis 1) - VCE = 5 V, - IC = 100 :A - VCE = 5 V, - IC = 100 mA - VCE = 5 V, - IC = 500 mA - VCE = 5 V, - IC = 100 :A - VCE = 5 V, - IC = 100 mA - VCE = 5 V, - IC = 500 mA BSP 30 BSP 32 BSP 31 BSP 33 Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Switching times – Schaltzeiten turn-on time turn-off time - ICon = 100 mA, - IBon = 5 mA, IBoff = 5 mA Thermal resistance – Wärmewiderstand junction to ambient air – Sperrschicht zu umgebender Luft RthA 93 K/W 2) junction to soldering point – Sperrschicht zu Lötpad RthS 12 K/W Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren BSP 40, BSP 41, BSP 42, BSP 43 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 3