DCR1610F28 Phase Control Thyristor Preliminary Information DS5928-1.1 July 2009 (LN26822) FEATURES KEY PARAMETERS Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 2800V 1610A 21500A 1500V/µs 1000A/µs * Higher dV/dt selections available High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V DCR1610F28 DCR1610F26 DCR1610F24 2800 2600 2400 Conditions Tvj = -40°C to 125°C, IDRM = IRRM = 100mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. Outline type code: F (See Package Details for further information) Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1610F28 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR1610F28 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Parameter Symbol Test Conditions Max. Units 1607 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 2524 A Continuous (direct) on-state current - 2353 A IT Half wave resistive load SURGE RATINGS Parameter Symbol ITSM 2 It Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 21.5 kA VR = 0 2.3 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Tvj Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Virtual junction temperature Test Conditions Double side cooled DC - 0.0184 °C/W Single side cooled Anode DC - 0.0333 °C/W Cathode DC - 0.0418 °C/W Clamping force 23kN Double side - 0.004 °C/W (with mounting compound) Single side - 0.008 °C/W On-state (conducting) - 135 °C Reverse (blocking) - 125 °C Tstg Storage temperature range -55 125 °C Fm Clamping force 22.0 25.0 kN 2/10 www.dynexsemi.com DCR1610F28 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 100 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open - 1500 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 250 A/µs Gate source 30V, 10, Non-repetitive - 1000 A/µs tr < 0.5µs, Tj = 125°C VT(TO) rT tgd Threshold voltage – Low level 100A to 1000A at Tcase = 125°C - 0.8 V Threshold voltage – High level 1000A to 4000A at Tcase = 125°C - 0.91 V On-state slope resistance – Low level 100A to 1000A at Tcase = 125°C - 0.35 m On-state slope resistance – High level 1000A to 4000A at Tcase = 125°C - 0.245 m VD = 67% VDRM, gate source 30V, 10 - 3 µs - 600 µs 2500 3500 µC Delay time tr = 0.5µs, Tj = 25°C tq Turn-off time Tj = 125°C, VR = 100V, dI/dt = 5A/µs, dVDR/dt = 20V/µs linear to 2500V QS Stored charge IT = 1000A, tp = 1000us,Tj = 125°C, dI/dt =5A/µs, IL Latching current Tj = 25°C, VD = 5V - 3 A IH Holding current Tj = 25°C, RG-K = , ITM = 500A, IT = 5A - 300 mA 3/10 www.dynexsemi.com DCR1610F28 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V VGD Gate non-trigger voltage At 50% VDRM, Tcase = 125°C 0.4 V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 250 mA IGD Gate non-trigger current At 50% VDRM, Tcase = 125°C 10 mA CURVES Instantaneous on-state current, IT - (A) 4000 3500 3000 2500 2000 1500 max 125ºC min 25ºC 1000 max 25ºC min 125ºC 500 0 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.20 Instantaneous on-state voltage, VT - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = 0.746516 B = -0.012797 C = 0.000146 D = 0.010555 these values are valid for Tj = 125°C for IT 100A to 4000A 4/10 www.dynexsemi.com DCR1610F28 SEMICONDUCTOR 130 16 180 120 90 60 30 120 ( oC ) case 12 Maximum case temperature, T Mean power dissipation - (kW) 14 10 8 6 180 120 90 60 30 4 2 90 80 70 60 50 40 30 20 0 0 1000 2000 3000 Mean on-state current, IT(AV) - (A) 0 4000 500 1000 1500 2000 2500 Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave Fig.4 Maximum permissible case temperature, double side cooled – sine wave 125 16 - (° C) 180 120 90 60 30 100 d.c. 180 120 90 60 30 14 Mean power dissipation - (kW) Heatsink 100 10 0 Maximum heatsink temperature, T 110 75 50 25 12 10 8 6 4 2 0 0 500 1000 1500 2000 2500 Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave 0 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) 5000 Fig.6 On-state power dissipation – rectangular wave 5/10 www.dynexsemi.com DCR1610F28 SEMICONDUCTOR 125 d.c. 180 120 90 60 30 100 Maximum heatsink temperature T heatsink -(o C) Maximum permissible case temperature , T case -(° C) 125 75 50 25 d.c. 180 120 90 60 30 100 75 50 25 0 0 0 1000 2000 3000 4000 0 1000 2000 3000 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave 45.0 Double side cooled Double Side Cooled Thermal Impedance Zth(j-c) ( °C/kW ) 40.0 Anode side cooled Ri (°C/kW) 1 7.5608 2 4.0772 Ti (s) 0.6877 0.2537 0.0614 0.0101 Ri (°C/kW) 6.7211 4.6219 15.5387 14.8631 Ti (s) Cathode Side Cooled Cathode side cooled 35.0 4000 Ri (°C/kW) Ti (s) Anode Side Cooled 3 3.8420 4 2.8671 0.1910 0.0158 5.0011 3.3169 11.5564 8.5810 4.7942 8.3643 4.2216 6.0269 0.0166 0.2255 Z th [ Ri (1 exp(T / Ti )] i 4 30.0 i 1 25.0 20.0 Rth(j-c) Conduction 15.0 Tables show the increments of thermal resistance Rth(j-c) when the device operates at conduction angles other than d.c. 10.0 5.0 0.0 0.001 0.01 0.1 1 Time ( s ) 10 100 Double side cooling Zth (z) ° sine. rect. 180 3.19 2.14 120 3.72 3.10 90 4.29 3.64 60 4.81 4.23 30 5.22 4.88 15 5.40 5.22 ° 180 120 90 60 30 15 Anode Side Cooling Zth (z) sine. rect. 2.97 2.03 3.43 2.89 3.92 3.36 4.36 3.87 4.69 4.41 4.84 4.70 Cathode Sided Cooling Zth (z) ° sine. rect. 180 2.95 2.02 120 3.40 2.87 90 3.88 3.34 60 4.31 3.84 30 4.64 4.37 15 4.79 4.65 Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 6/10 www.dynexsemi.com DCR1610F28 SEMICONDUCTOR 6 60 50 15 40 4 ITSM 2 2 30 It 2 20 Conditions: Tcase= 125°C VR = 0 half-sine wave I t (MA s) Conditions: Tcase = 125°C VR =0 Pulse width = 10ms Surge current, I TSM - (kA) Surge current, ITSM- (kA) 25 20 2 10 10 1 10 0 100 0 1 10 Number of cycles Pulse width, tP - (ms) Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current 9000 700 8000 Stored Charge, Q S - (uC) 7000 600 6000 5000 4000 Qsmin = 1306.826*(di/dt)0.3971 3000 2000 IRRmax = 41.043*(di/dt)0.6867 Conditions: Tj = 125oC IF = 1000A tp = 1000us VRM = -100V Qsmax = 2060.337*(di/dt)0.3349 Reverse recovery current, I RR - (A) Conditions : Tj = 125oC, IF= 1000A tp = 1000us VRM = -100V 100 500 400 300 200 IRRmin = 32.398*(di/dt)0.7099 100 1000 0 0 0 20 40 60 Rate of decay of on-state current, di/dt - (A/us) Fig.12 Stored charge vs di/dt 0 10 20 30 40 50 60 Rate of decay of on-state current, di/dt - (A/us) Fig.13 Reverse recovery current vs di/dt 7/10 www.dynexsemi.com DCR1610F28 SEMICONDUCTOR 10 9 Pulse Width us 100 200 500 1000 10000 Gate trigger voltage, VGT - (V) 8 7 Pulse Power PGM (Watts) Frequency Hz 50 100 150 150 150 150 150 150 150 100 20 - 400 150 125 100 25 - Upper Limit 6 5 Preferred gate drive area 4 3 2 o 1 Tj = -40oC Tj = 25oC Lower Limit Tj = 125 C 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Gate trigger current IGT, - (A) Fig14 Gate Characteristics 30 Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C Gate trigger voltage, VGT - (V) 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 Gate trigger current, IGT - (A) Fig. 15 Gate characteristics 8/10 www.dynexsemi.com DCR1610F28 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 3rd ANGLE PROJECTION DO NOT SCALE IF IN DOUBT ASK HOLE Ø3.60 X 2.00 DEEP (IN BOTH ELECTRODES) 20° OFFSET (NOM.) TO GATE TUBE Ø73.0 MAX Ø47.0 NOM Ø1.5 CATHODE GATE ANODE Ø47.0 NOM Device DCR1003SF18 DCR1006SF28 DCR1008SF36 DCR1020F65 DCR1050SF42 DCR1180F52 DCR1274SF18 DCR1275SF28 DCR1277SF36 DCR1279SF48 DCR1350F42 DCR1610F28 DCR1640F28 DCR1830F22 DCR810F85 DCR840F48 DCR890F65 DCR950F65 Maximum Minimum Thickness Thickness (mm) (mm) 26.415 25.865 26.49 25.94 26.72 26.17 27.1 26.55 26.72 26.17 26.84 26.29 26.415 25.865 26.49 25.94 26.72 26.17 26.84 26.29 26.72 26.17 26.49 25.94 26.49 25.94 26.415 25.865 27.46 26.91 26.84 26.29 27.1 26.5 27.1 26.5 FOR PACKAGE HEIGHT SEE TABLE Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: F Fig.16 Package outline 9/10 www.dynexsemi.com DCR1610F28 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 www.dynexsemi.com