DCR2040L42 Phase Control Thyristor Preliminary Information DS5960-1 February 2010 (LN27056) FEATURES KEY PARAMETERS Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 2040A 29000A 1500V/µs 400A/µs APPLICATIONS * Higher dV/dt selections available High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V DCR2040L42 DCR2040L40 DCR2040L35 4200 4000 3500 Conditions Tvj = -40°C to 125°C, IDRM = IRRM = 200mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. Outline type code: L ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. (See Package Details for further information) Fig. 1 Package outline For example: DCR2040L42 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR2040L42 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Test Conditions Max. Units 2040 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 3204 A Continuous (direct) on-state current - 2965 A IT Half wave resistive load SURGE RATINGS Symbol ITSM 2 It Parameter Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 29 kA VR = 0 4.2 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Test Conditions Double side cooled DC - 0.0117 °C/W Single side cooled Anode DC - 0.0187 °C/W Cathode DC - 0.0329 °C/W Double side - 0.0025 °C/W - 0.005 °C/W - 125 °C Clamping force 37kN (with mounting compound) Blocking VDRM / VRRM Single side Tvj Virtual junction temperature Tstg Storage temperature range -55 125 °C Fm Clamping force 33.0 41.0 kN 2/10 www.dynexsemi.com DCR2040L42 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 200 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open - 1500 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) - 200 200 A/µs Gate source 30V, 10, - 400 400 A/µs tr < 0.5µs, Tj = 125°C VT(TO) rT tgd Threshold voltage – Low level 500A to 2000A at Tcase = 125°C - 0.9 V Threshold voltage – High level 2000A to 7000A at Tcase = 125°C - 1.08 V On-state slope resistance – Low level 500A to 2000A at Tcase = 125°C - 0.36 m On-state slope resistance – High level 2000A to 7000A at Tcase = 125°C - 0.265 m VD = 67% VDRM, gate source 30V, 10 - 3 µs 250 500 µs 1000 3000 µC Delay time tr = 0.5µs, Tj = 25°C tq Turn-off time Tj = 125°C, VR = 200V, dI/dt = 1A/µs, dVDR/dt = 20V/µs linear QS Stored charge IT = 2000A, Tj = 125°C, dI/dt – 1A/µs, IL Latching current Tj = 25°C, VD = 5V - 3 A IH Holding current Tj = 25°C, RG-K = , ITM = 500A, IT = 5A - 300 mA 3/10 www.dynexsemi.com DCR2040L42 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V VGD Gate non-trigger voltage At VDRM, Tcase = 125°C 0.4 V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 250 mA IGD Gate non-trigger current VDRM = 5V, Tcase = 25°C 10 mA CURVES 7000 Instantaneous on-state current, I T - (A) min 125°C max 125°C 6000 min 25°C max 25°C 5000 4000 3000 2000 1000 0 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous on-state voltage, VT - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = 0.137154 B = 0.132631 C = 0.000248 D = -0.001126 these values are valid for Tj = 125°C for IT 100A to 7000A 4/10 www.dynexsemi.com DCR2040L42 SEMICONDUCTOR 16 180 120 90 60 30 Mean power dissipation - (kW) 14 12 130 180 120 90 60 30 120 110 Maximum case temperature, T case ( o C ) 10 8 6 4 2 100 90 80 70 60 50 40 30 20 10 0 0 0 1000 2000 3000 0 4000 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave 180 120 90 60 30 100 Fig.4 Maximum permissible case temperature, double side cooled – sine wave 12 10 Mean power dissipation - (kW) Maximum heatsink temperature, THeatsink - ( °C) 125 500 1000 1500 2000 2500 3000 3500 75 50 8 6 4 d.c. 180 120 90 60 30 2 25 0 0 0 0 500 1000 1500 2000 2500 Mean on-state current, IT(AV) - (A) 3000 Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave 1000 2000 3000 4000 5000 Mean on-state current, IT(AV) - (A) Fig.6 On-state power dissipation – rectangular wave 5/10 www.dynexsemi.com DCR2040L42 SEMICONDUCTOR Maximum permissible case temperature , Tcase -(°C) 130 d.c. 180 120 90 60 30 120 110 100 90 125 Maximum heatsink temperature Theatsink -( o C) 80 70 60 50 40 30 20 10 d.c. 180 120 90 60 30 100 75 50 25 0 0 0 0 1000 2000 3000 4000 1000 Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave 4000 Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave 35 Thermal Impedance, Z thj-c ( °C/kW) 3000 Mean on-state current, IT(AV ) - (A) Mean on-state current, IT(AV) - (A) 30 2000 5000 Double side cooled Ti (s) Double Side Cooling Anode Side Cooling Cathode Sided Cooling Anode side cooled 3 4.2073 0.008639 0.0533503 0.3309504 1.612 0.9647 2.8312 4.9433 9.909 0.0096096 0.0627037 0.4198958 8.908 0.9285 2.9366 2.3581 26.683 0.0093033 0.0621535 0.3092235 5.835 Ri (°C/kW) Ti (s) 25 2 2.6074 Ri (°C/kW) Ti (s) Cathode side cooled 1 0.8342 Ri (°C/kW) 4 4.041 Zth = [Ri x ( 1-exp. (t/ti))] 20 Rth(j-c) Conduction 15 Tables show the increments of thermal resistance R th(j-c) when the device operates at conduction angles other than d.c. 10 Double side cooling Zth (z) 5 0 0.001 0.01 0.1 1 10 100 ° 180 120 90 60 30 15 sine. 1.45 1.68 1.93 2.16 2.34 2.42 rect. 0.98 1.40 1.64 1.90 2.19 2.34 Anode Side Cooling Zth (z) ° 180 120 90 60 30 15 sine. 1.43 1.66 1.90 2.12 2.30 2.37 rect. 0.97 1.39 1.62 1.88 2.15 2.30 Cathode Sided Cooling Zth (z) ° 180 120 90 60 30 15 sine. 1.44 1.66 1.91 2.14 2.31 2.39 rect. 0.97 1.39 1.63 1.89 2.17 2.31 Time ( s ) Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 6/10 www.dynexsemi.com DCR2040L42 SEMICONDUCTOR 100 20 100 70 ITSM 14 2 12 50 10 2 It 40 8 30 6 20 4 10 2 0 10 1 10 0 1 100 10 100 Pulse width, tP - (ms) Number of cycles Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current 14000 500 QS (max) = 450 Reverse recovery current, IRR - (A) 2524.7*(di/dt)0.5257 12000 Stored Charge, QS - (uC) 16 2 Surge current, I TSM - (kA) Surge current, ITSM- (kA) 80 60 18 Conditions: Tcase= 125°C VR = 0 half-sine wave I t (MA s) 90 Conditions: Tcase = 125°C V R =0 Pulse w idth = 10ms QS (min)= 10000 1046.8*(di/dt)0.659 8000 6000 Conditions: o Tj=125 C, VRpeak ~ 2500V VRM ~1700V snubber as appropriate to control reverse voltages 4000 2000 IRRmax = 42.033*(di/dt)0.7538 400 350 300 250 IRRmin = 26.684*(di/dt)0.827 200 150 Conditions: Tj=125oC, VRpeak ~ 2500V VRM ~1700V snubber as appropriate to control reverse voltages 100 50 0 0 10 20 30 Rate of decay of on-state current, di/dt - (A/us) Fig.12 Reverse recovery charge 0 0 10 20 30 Rate of decay of forward current, di/dt - (A/us) Fig.13 Reverse recovery current 7/10 www.dynexsemi.com DCR2040L42 SEMICONDUCTOR 10 9 Pulse Width us 100 200 500 1000 10000 Gate trigger voltage, VGT - (V) 8 7 Pulse Power PGM (Watts) Frequency Hz 50 100 150 150 150 150 150 150 150 100 20 - 400 150 125 100 25 - Upper Limit 6 5 Preferred gate drive area 4 3 2 o 1 Tj = -40oC Tj = 25oC Lower Limit Tj = 125 C 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Gate trigger current IGT, - (A) Fig14 Gate Characteristics 30 Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C Gate trigger voltage, VGT - (V) 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 Gate trigger current, IGT - (A) Fig. 15 Gate characteristics 8/10 www.dynexsemi.com DCR2040L42 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 3rd ANGLE PROJECTION DO NOT SCALE IF IN DOUBT ASK HOLE Ø3.60 X 2.00 DEEP (IN BOTH ELECTRODES) 20° OFFSET (NOM.) TO GATE TUBE Maximum Minimum Thickness Thickness Device (mm) (mm) DCR1374SBA18 34.515 33.965 DCR1375SBA28 34.59 34.04 DCR1376SBA36 34.82 34.27 DCR2690L22 34.515 33.965 DCR2480L28 34.59 34.04 DCR2040L42 34.82 34.27 DCR1850L52 34.94 34.39 DCR1570L65 35.2 34.65 DCR1300L85 35.56 35.01 Ø98.9 MAX. Ø62.85 NOM. Ø1.5 CATHODE GATE ANODE Ø62.85 NOM. FOR PACKAGE HEIGHT SEE TABLE Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: L Fig.16 Package outline 9/10 www.dynexsemi.com DCR2040L42 SEMICONDUCTOR Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com Phone: +(0) 1522 502753 / 502901 Fax: +(0) 1522 500020 e-mail: [email protected] Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners 10/10 www.dynexsemi.com